ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Films of aluminium oxide have been formed on single crystal silicon substrates using AlCl3-CO2-H2 gas mixtures in a cold-walled chemical vapour deposition (CVD) reactor. The nucleation and subsequent growth of the deposit have been observed under the varying process parameters. It is found that the nucleation and growth of the Al2O3 are dependent on the H2O flux and H2O supersaturation. An activation energy of 34.8 Kcal mol−1 is obtained for the growth rate indicating that the CVD of Al2O3 on silicon is a thermally activated process and limited by surface reaction. Scanning electron micrographs (SEM) show that the deposited films are amorphous at low temperature, 850° C, but change to fine grained polycrystalline structure at high temperature, 1000° C.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01103550
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