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  • 1
    Call number: AL 16
    In: Atlas litologo-paleogeograficeskich kart SSSR
    Type of Medium: Monograph available for loan
    Pages: 52 Kt.
    Location: Upper compact magazine
    Branch Library: GFZ Library
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  • 2
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    NOAA/National Centers for Coastal Ocean Science | Oxford, MD
    In:  http://aquaticcommons.org/id/eprint/14949 | 403 | 2014-03-14 22:55:57 | 14949 | United States National Ocean Service
    Publication Date: 2021-06-29
    Description: Investigators at the Cooperative Oxford Laboratory (COL) diagnose and study crustaceans, mollusks, finfish, and a variety of other marine and estuarine invertebrates to assess animal health. This edition updates the Histological Techniques for Marine Bivalve Mollusks manual by Howard and Smith (1983) with additional chapters on molluscan and crustacean techniques. The new edition is intended to serve as a guide for histological processing of shellfish, principally bivalve mollusks and crustaceans. Basically, the techniques included are applicable for histopathological preparation of all marine animals, recognizing however that initial necropsy is unique to each species. Photographs and illustrations are provided for instruction on necropsy of different species to simplify the processing of tissues. Several of the procedures described are adaptations developed by the COL staff. They represent techniques based on principles establishedfor the histopathologic study of mammalian and other vertebrate tissues, but modified for marine and aquatic invertebrates. Although the manual attempts to provide adequate information on techniques, it is also intended to serve as a useful reference source to those interested in the pathology of marine animals. General references and recommended reading listed in the back of the manual will provide histological information on species not addressed in the text.
    Description: This edition updates the Histological Techniques for Marine Bivalve Mollusks manual by Howard and Smith (1983) with additional chapters on molluscan and crustacean techniques.
    Keywords: Chemistry ; Fisheries
    Repository Name: AquaDocs
    Type: monograph
    Format: application/pdf
    Format: application/pdf
    Format: 218
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3228-3237 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect structures were investigated by transmission electron microscopy for GaN/Al2O3 (0001) epilayers grown by metal-organic chemical vapor deposition using a two-step process. The defect structures, including threading dislocations, partial dislocation bounding stacking faults, and inversion domains, were analyzed by diffraction contrast, high-resolution imaging, and convergent beam diffraction. GaN film growth was initiated at 600 °C with a nominal 20 nm nucleation layer. This was followed by high-temperature growth at 1080 °C. The near-interfacial region of the films consists of a mixture of cubic and hexagonal GaN, which is characterized by a high density of stacking faults bounded by Shockley and Frank partial dislocations. The near-interfacial region shows a high density of inversion domains. Above ∼0.5 μm thickness, the film consists of isolated threading dislocations of either pure edge, mixed, or pure screw character with a total density of ∼7×108 cm−2. The threading dislocation reduction in these films is associated with cubic to hexagonal transformation of the nucleation layer region during high temperature growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1438-1440 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped (1 μm gate length) AlGaN/GaN modulation doped field effect transistors (MODFETs), respectively. The devices also have large transconductances up to 140 mS/mm and a full channel current of 150–400 mA/mm. The Si doped MODFET sample demonstrated a very high room temperature mobility of 1500 cm2/Vs. With these specifications, GaN field effect transistors as microwave power devices are practical. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2147-2149 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Basal plane sapphire is a common substrate for the heteroepitaxy of GaN. This presents a challenge for fabrication of cleaved-facet GaN lasers because the natural cleavage planes in (0001) α-Al2O3 are not perpendicular to the wafer surface. This letter describes a method for achieving perpendicular cleaved facets through wafer fusion that can potentially be used to fabricate GaN based in-plane lasers. We demonstrate successful fusion of GaN to InP without voids or oxide at the interface and fabricate optically flat cleaved GaN facets that are parallel to the crystallographic planes of the host InP. I–V measurements have been performed across the n-N fused interface. These results show that the fused junction exhibits a barrier of several electron volts for electrons passing from the InP to the GaN and ohmic conduction of electrons moving in the opposite direction. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1371-1373 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and morphology of low growth temperature GaN nucleation layers have been studied using atomic force microscopy (AFM), reflection high energy electron diffraction (RHEED), and transmission electron microscopy (TEM). The nucleation layers were grown at 600 °C by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on c-plane sapphire. The layers consist of predominantly cubic GaN (c-GaN) with a high density of stacking faults and twins parallel to the film/substrate interface. The average grain size increases with increasing layer thickness and during the transition from low temperature (600 °C) to the high temperatures (1080 °C) necessary for the growth of device quality GaN. Upon heating to 1080 °C the nucleation layer partially converts to hexagonal GaN (h-GaN) while retaining a high stacking fault density. The mixed cubic-hexagonal character of the nucleation layer region is sustained after subsequent high-temperature GaN growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2159-2161 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth of GaxIn1−xAs/AlAs double-barrier heterostructures on InP and the fabrication of GaxIn1−xAs/AlAs resonant tunneling diodes (RTDs) by metalorganic chemical vapor deposition (MOCVD). High resolution x-ray diffraction measurements were used to evaluate the heterostructure interface quality. The RTDs achieved a room-temperature peak to valley ratio of 7.7:1 with peak current density of 9.6×104 A/cm2. These are the best reported room-temperature results for any reported RTDs grown by MOCVD. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1541-1543 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural evolution of epitaxial GaN layers grown on basal plane sapphire has been studied by atomic force microscopy (AFM), x-ray diffraction, and transmission electron microscopy (TEM). High-temperature growth (1050–1080 °C) on optimized nucleation layers leads to clear, specular films. AFM on the as-grown surface shows evenly spaced monatomic steps indicative of layer by layer growth. AFM measurements show a step termination density of 1.7×108 cm−2 for 5 μm films. This value is in close agreement with TEM measurements of screw and mixed screw-edge threading dislocation density. The total measured threading dislocation density in the 5 μm films is 7×108 cm−2. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1282-1284 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Minority carrier relaxation in undoped n-type gallium nitride (GaN) thin films was studied by photoconductivity decay measurements in the time span from 50 ns to 50 s. The decay is characterized by an initial exponential decay followed by a quasi-power-law decay for decades of time longer than 1 μs. The decay rate is insensitive to the electron concentration and is only slightly temperature dependent. The results are discussed in terms of hole trapping at gap states and subsequent recombination. The studies revealed that the dominant recombination mechanism is very different from recombination through dislocations and that the valence band-tail states in n-type GaN seem to be negatively charged. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 643-645 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we demonstrate that the anomalously low (002) x-ray rocking curve widths for epitaxial hexagonal GaN films on (001) sapphire are a result of a specific threading dislocation (TD) geometry. Epitaxial GaN films were grown on c-plane sapphire by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) in a horizontal flow reactor. Films were grown with (002) rocking curves (ω-scans) widths as low as 40 arcsec and threading dislocation densities of ∼2×1010 cm−2. The threading dislocations in this film lie parallel to the [001] direction and within the limit of imaging statistics, all are pure edge with Burgers vectors parallel to the film/substrate interface. These TDs will not distort the (002) planes. However, distortion of asymmetric planes, such as (102), is predicted and confirmed in (102) rocking curve widths of 740 arcsec. These results are compared with films with (002) rocking curves of ∼270 arcsec and threading dislocation densities of ∼7×108 cm−2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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