ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We propose and demonstrate a single-wavelength all-optical transistor-like device, exploiting the polarization-dependent absorption coefficient in quantum wells. The device is a GaAs/AlAs multiple-quantum-well hetero-nipi waveguide structure. A transverse-electric (TE)-polarized control beam is absorbed, changing the refractive index through carrier-induced effects. A transverse-magnetic-polarized probe beam at the same wavelength, to which the material is transparent, undergoes a phase shift, which can be converted to amplitude modulation if required. The probe can be more powerful than the control beam, so the device can exhibit gain. We obtained a 180° phase shift in the probe beam with 4.2 mW of absorbed control light. The effect was greater with an applied dc bias. A 180° phase shift was obtained at 831 nm with 2.8 mW absorbed TE light and 0.5 V bias.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110512
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