Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 3153-3155
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Dielectric functions of strained silicon layers grown on very thick, relaxed Si1−xGex (x=0.115, 0.3, and 0.37) layers are presented. The effect of tetragonal biaxial strain to the dielectric function is observed to be large near the E1 gap region. We compare the strain-induced change in the dielectric function of silicon layers with that of SiGe layers and the elasto-optical (or piezo-optical) constants of silicon which were measured from bulk Si under uniaxial compressive stress. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115808
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