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  • 1
    Series available for loan
    Series available for loan
    The gold quartz veins of Grass Valley, California (1940)
    Washington, DC : United States Gov. Print. Off.
    Associated volumes
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    Call number: SR 90.0002(194)
    In: Professional paper
    Type of Medium: Series available for loan
    Pages: VI, 101 S. + 5 pl.
    Series Statement: U.S. Geological Survey professional paper 194
    Language: English
    Location: Lower compact magazine
    Branch Library: GFZ Library
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: "Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy'' [J. Appl. Phys. 57, 249 (1985)] (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1238-1238 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337803
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  • 3
    Electronic Resource
    Electronic Resource
    Defect mechanisms in degradation of 1.3-μm wavelength channeled-substrate buried heterostructure lasers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 611-623 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Channeled-substrate buried heterostructure (CSBH) lasers which were purged from populations undergoing high reliability qualification have been studied in detail. Gradual and rapid degradation mechanisms leading to accelerated aging failure modes have been analyzed by transmission electron microscopy, convergent beam electron diffraction, electroluminescence, energy dispersive x-ray analysis, and chemical etching. The gradual degradation mode of CSBH lasers is characterized by (1) a gradual increase in room-temperature threshold current; (2) a decrease in external quantum efficiency, typically a drop in peak value of dL/dI greater than 25%; (3) a drop in forward voltage at low current, indicating a change in junction characteristics; (4) a large peak inI(dV/dI) below threshold (at around 3 mA); and (5) an enhancement in the peak in I2(d2V/dI2) at laser threshold. A defect mechanism associated with the gradual degradation begins with a nucleation of extrinsic dislocation loops along the V-groove {111} p-n–type sidewall interfaces between the Cd-diffused p-InP and liquid-phase-epitaxial-grown n-InP buffer inside the groove. These dislocation loops subsequently grow out of the interfaces into the n-InP buffer region in the direction of minority-carrier injection, indicating a nonradiative recombination-assisted defect growth process. For those loops which enter the quaternary active region near the tip of the active crescent, the growth rate along the (001) and (010) planes is greatly enhanced and the loops eventually cut across the active stripe and become dark-line defects, as confirmed by electroluminescence. Nucleation of dislocation loops is not observed along the {111} p-p–type sidewall interfaces above the active stripe. The fact that the dislocation loops are all extrinsic in nature implies that the {111} sidewall interfaces as well as the quaternary active region contain a high density of interstitials. The possible causes for the generation and growth of the dislocation loops and the high density of point defects are discussed. The rapid degradation mode of the CSBH laser is characterized by a sudden drop in light intensity during the aging process. The associated defect mechanism starts with localized melting at the mirror facet or inside the lasing cavity. A metal-rich droplet subsequently forms which propagates along the center of the active stripe in the direction towards the cavity center via a meltback-regrowth process; i.e., material melts in front of the droplet and regrows after it propagates by. The nonideal condition of regrowth results in the formation of a wormlike defect composed of a cylinder of defective materials bounded by an off-stoichiometric interface. The wormlike defect is dark under electroluminescence. Complicated dislocation structures can also be grown from the wormlike defect under a nonradiative recombination-assisted defect growth process. These phenomena are presented and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340100
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  • 4
    Electronic Resource
    Electronic Resource
    Defect structure in III-V compound semiconductors: Generation and evolution of defect structures in InGaAs and InGaAsP epitaxial layer grown by hydride transport vapor-phase epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3441-3447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation and evolution of a novel defect structure in InGaAs single-layer and InGaAsP/InP multilayer laser structures grown by hydride transport vapor-phase epitaxy on (001)InP substrate has been studied in detail using both cross-section and plan-view transmission electron microscopy. Under certain growth conditions, a unique defect structure consisting of a dislocation tangle initiated at the InGaAs/InP interface, having the shape of a pyramid, followed by a bundle of straight dislocations propagating through the InGaAs epitaxial layer near [001] growth direction and along 〈112〉 orientations, is formed. Such defect structure is universal to these materials grown from vapor sources. The pyramidal-dislocation tangles, or PDT defects, are formed as a result of the agglomeration of fine precipitates (500 A(ring) in size) which generate a special type of edge dislocation lying in the (110) plane with the line direction oriented close to the [001] growth direction. X-ray microanalysis indicates that the interfacial precipitate, which induces the generation of the PDT defect, contains excess Ga and P. At the InGaAsP/InP interface, the agglomeration of fine precipitates does not occur even at a density as high as 4×1012 cm2. The possible causes of the formation of the fine interfacial precipitate and PDT defect are discussed. The evolution of the defect structure across successive layers is further investigated in a multilayer structure. The result indicates that the major defects in the quaternary layers are the [001]-oriented dislocations generated from the precipitates at the quaternary/binary interfaces. These dislocations recombine at the second interface after propagating through the layer. The 60° slip-type dislocation is also observed. The replication of dislocations from the substrate is negligible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336812
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  • 5
    Electronic Resource
    Electronic Resource
    Surface layer spinodal decomposition in In1−xGaxAsyP1−y and In1−xGaxAs grown by hydride transport vapor-phase epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4610-4615 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Composition modulation due to spinodal decomposition in In1−xGaxAsyP1−y quaternary and In1−xGaxAs ternary alloys is observed by transmission electron microscopy in epitaxial layers grown by hydride transport vapor phase epitaxy at 700 °C on (001) InP substrate. A quasi-periodic fine contrast oriented along [100] and [010] directions is found in all samples over a composition range of 0.20≤x≤0.53 and 0.37≤y≤1. Contrary to the result reported on materials grown by liquid-phase epitaxy, complete mixing at composition outside the miscibility gap predicted by thermodynamics for bulk crystals is not observed. The evidence indicates a rapid spinodal decomposition by surface diffusion during vapor phase deposition. Furthermore, transmission electron microscopy diffraction contrast experiments on the (110) cross-sectional view of planar and nonplanar epitaxial layers reveal a columnar structure oriented along the growth direction which is consistent with the surface layer spinodal formation. Additional coarse contrast is observed in InGaAs epilayers. TEM stereo investigation confirms a film thickness variation associated with the coarse contrast.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335368
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  • 6
    Electronic Resource
    Electronic Resource
    Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 249-257 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Misfit stress in InGaAs/InP heteroepitaxial structures grown by hydride-transport vapor phase epitaxy has been studied using an x-ray technique to measure the wafer curvature and using an x-ray double crystal diffractometer to measure mismatches. The stress calculated from the measured radius of curvature was, in all cases, found to be smaller than the value predicted from the lattice mismatch using the simple beam theory and assuming a coherent interface. A simple argument is used to show that the parallel mismatch is directly related to the density of misfit dislocations. By taking into account both the presence of misfit dislocations and tetragonal distortion, relationships between the curvature, density of interfacial misfit dislocations, relaxed lattice mismatch, and measured tetragonally distorted vertical and parallel mismatches are derived. Predicted values for the radius of curvature agree very well with measured values. The results also indicate that in the presence of interfacial misfit dislocations the nature of the stress in the epitaxial layer is not uniquely determined by the mismatch. The stress can change sign depending upon the density of the misfit dislocations. This effect has actually been observed. The defect structure of the epitaxial layer is analyzed by Nomarski interference contrast microscopy, transmission x-ray topography, and transmission electron microscopy. We have found that the misfit stress can be greatly relaxed in the presence of lattice defects such as stacking faults. The theoretical calculation is further generalized from the single epilayer/substrate case to an n-layer heterostructure. The determination of the stresses in each layer and the misfit dislocation densities are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334797
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  • 7
    Electronic Resource
    Electronic Resource
    Interfacial microstructure and electrical properties of the Pt/Ti ohmic contact in p-In0.53Ga0.47As formed by rapid thermal processing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3754-3760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial microstructure and electrical properties of the Pt/Ti ohmic contact to p-In0.53Ga0.47As (Zn: 5×1018 cm−3) formed by rapid thermal processing (RTP) were intensively studied. Significant interdiffusion of Ti, In, and As across the interface, driven by RTP, occurred at temperatures of, or above, 350 °C for a heating duration of 30 s. A minimum specific contact resistance (9.0×10−6 Ω cm2) was achieved after heating at 450 °C. Cross-sectional transmission electron microscopy of this sample revealed an interfacial reaction zone with complicated microstructure, and the dominant interfacial compound was identified to be InAs. Further increase in RTP temperature resulted in a change in the microstructure, and degradation of the contact resistance. The temperature-dependence characteristic of the specific contact resistance of as-deposited Pt/Ti contact to InGaAs revealed a thermionic-emission-dominated carrier-transport mechanism with an effective barrier height φb, of 0.13 V. RTP treatment to the sample at elevated temperatures up to 450 °C decreased the temperature dependence of the contact resistance. This phenomenon strongly suggests a partial conversion of the dominant carrier-transport mechanism across the contact area from thermionic emission to field emission. This was further verified by fitting the temperature dependence of the measured contact resistance to a phenomenological theory based on a linear combination of the two different types of carrier-transport mechanisms operating at isolated area segments distributed uniformly across the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345018
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  • 8
    Electronic Resource
    Electronic Resource
    A Study of the LixMn(1-x)O System1 (1956)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 78 (1956), S. 3255-3260 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01595a006
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  • 9
    Electronic Resource
    Electronic Resource
    X-Ray Diffraction Powder Data for Some Copper N-Alkylsalicylaldimine Chelates (1957)
    s.l. : American Chemical Society
    Analytical chemistry 29 (1957), S. 1145-1146 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60128a008
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  • 10
    Electronic Resource
    Electronic Resource
    A study of Several Systems of the type Liz[CoyNi(1-y)](1-x)O (1959)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 63 (1959), S. 198-202 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150572a016
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