Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
78 (1995), S. 5609-5613
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The temperature dependence of the optical-absorption edge (Urbach edge) of GaAs is measured in semi-insulating and n-type GaAs (n=2×1018 cm−3) over the temperature range from room temperature to 700 °C. Both the optical absorption and the temperature are measured using a diffuse reflectance technique. The characteristic energy of the exponential absorption edge is found to increase linearly with temperature, from 7.5 meV at room temperature to 12.4 meV at 700 °C, for semi-insulating GaAs. The temperature dependent part of the width of the Urbach edge for semi-insulating GaAs is six times smaller than predicted by the standard theory where the edge width is proportional to the phonon population. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359683
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