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  • 1
    Electronic Resource
    Electronic Resource
    Two-dimensional profiling of shallow junctions in Si metal-oxide-semiconductor structures using scanning tunneling spectroscopy and transmission electron microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2115-2121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used cross-sectional scanning tunneling spectroscopy and cross-sectional transmission electron microscopy to perform two-dimensional profiling of shallow pn junctions in Si metal-oxide-semiconductor structures. In the tunneling spectroscopy measurements, clear differences were observed between current-voltage spectra obtained from p-type, n-type, and depleted regions of the metal-oxide-semiconductor structures; current images generated from the tunneling spectra revealed the profiles of the pn junctions with spatial resolution in both the lateral and vertical directions on the order of 10 nm. Calculated tunneling current-voltage spectra were found to be consistent with observed differences in experimental spectra obtained from p-type and n-type regions of the junctions. Junction profiles obtained by scanning tunneling spectroscopy have also been compared to transmission electron microscopy images of chemically delineated junctions and measurements of vertical dopant profiles obtained by secondary ion mass spectrometry. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361069
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  • 2
    Electronic Resource
    Electronic Resource
    Observation of excitonic transitions in InSb quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1101-1103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of interband exciton transitions in InSb/AlxIn1−xSb multi-quantum-well samples. The exciton peaks are identified with the use of a simple quantum well model. The strain present in the InSb wells alters the spectrum significantly from that for unstrained III–V materials and makes it possible to use the exciton spectrum in determining the band offset. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122097
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  • 3
    Electronic Resource
    Electronic Resource
    Electron tunneling time measured by photoluminescence excitation correlation spectroscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 552-554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunneling time for electrons to escape from the lowest quasibound state in the quantum wells of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures with barriers between 16 and 62 A(ring) has been measured at 80 K using photoluminescence excitation correlation spectroscopy. The decay time for samples with barrier thicknesses from 16 A(ring) (≈12 ps) to 34 A(ring)(≈800 ps) depends exponentially on barrier thickness, in good agreement with calculations of electron tunneling time derived from the energy width of the resonance. Electron and heavy hole carrier densities are observed to decay at the same rate, indicating a coupling between the two decay processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100928
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  • 4
    Electronic Resource
    Electronic Resource
    Carrier lifetimes in ion-damaged GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2424-2426 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence excitation correlation spectroscopy has been used to measure the dependence of carrier lifetime on the H+ ion implantation dose in GaAs. For doses greater than 1×1012 cm−2 the carrier lifetime is inversely proportional to the ion dose. The minimum lifetime measured was 0.6±0.2 ps for a dose of 1×1014 cm−2. Most important, there is no sign of saturation of carrier lifetime with ion dose down to this lifetime, thus still shorter lifetimes should be achievable with increased ion dose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101096
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  • 5
    Electronic Resource
    Electronic Resource
    Picosecond time-resolved photoluminescence using picosecond excitation correlation spectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2077-2082 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the temporal decay of photoluminescence (PL) as detected by picosecond excitation correlation spectroscopy (PECS). We analyze the correlation signal that is obtained from two simple models; one where radiative recombination dominates, the other where trapping processes dominate. It is found that radiative recombination alone does not lead to a correlation signal. Parallel trapping type processes are found to be required to see a signal. To illustrate this technique, we examine the temporal decay of the PL signal for In-alloyed, semi-insulating GaAs substrates. We find that the PL signal indicates a carrier lifetime of roughly 100 ps, for excitation densities of 1×1016–5×1017 cm−3. PECS is shown to be an easy technique to measure the ultrafast temporal behavior of PL processes because it requires no ultrafast photon detection. It is particularly well suited to measuring carrier lifetimes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341111
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  • 6
    Electronic Resource
    Electronic Resource
    Atomic-scale view of AlGaAs/GaAs heterostructures with cross-sectional scanning tunneling microscopy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1273-1275 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomically resolved cross-sectional scanning tunneling microscope topographic images of heterostructures that include a sequence of 1, 2, 5, and 10 nm AlGaAs and GaAs layers are presented. These layers clearly show alloy fluctuations and interface roughness on an atomic scale. In the thick AlGaAs layers a mottled structure with regions of higher Al content about 2 nm wide and elongated in [1¯12] or [11¯2] directions are observed. Similarly, the interfaces are rough on a 2 nm length scale. These results suggest that, for the conditions used for the epitaxial growth of the ternary layers, Al-rich regions nucleate and grow anisotropically.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109755
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  • 7
    Electronic Resource
    Electronic Resource
    Dopant and carrier profiling in modulation-doped GaAs multilayers with cross-sectional scanning tunneling microscopy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3636-3638 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the direct measurement of dopant and carrier density profiles in GaAs (001) modulation-doped structures using cross-sectional scanning tunneling microscopy. On ultrahigh-vacuum-cleaved cross-sectional (110) GaAs surfaces, individual electrically active dopants are observed as hillocks in the top several surface layers, and the tip-sample separation is found to be sensitive to the carrier concentration. In structures where the conventionally measured p-type dopant concentration varied from 1×1018 to 1×1019 cm−3 the density of such dopant hillocks varies accordingly and the tip-sample separation changes by 0.1 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110073
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  • 8
    Electronic Resource
    Electronic Resource
    Direct imaging of dopants in GaAs with cross-sectional scanning tunneling microscopy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2923-2925 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the direct imaging of individual electrically active dopants on cross-sectionally cleaved GaAs using scanning tunneling microscopy and compare these results to theory. The observation of these dopants is due to an enhancement in the tunneling current in the neighborhood of an ionized dopant atom in the top several surface layers. In highly p-doped GaAs, for tunneling out of the valence band, the dopants in the top several surface layers appear as individual circular hillocks about 2 nm in diameter, superimposed on the As sublattice, as expected. From the size of the hillock and the symmetry of the As sublattice enhanced by the hillock one can infer whether the dopant lies in the top, second or deeper layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110274
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  • 9
    Electronic Resource
    Electronic Resource
    Atomic structure and luminescence excitation of GaAs/(AlAs)n(GaAs)m quantum wires with the scanning tunneling microscope (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1168-1170 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the imaging of a molecular beam epitaxially grown GaAs/(AlAs)n(GaAs)m quantum well-wire array by means of cross-sectional scanning tunneling microscopy (XSTM) and scanning tunneling-induced luminescence (STL). XSTM provides atomically resolved cross-sectional images of sets of quantum well wires with chemical sensitivity within the group III species and electrical sensitivity to single dopant atoms. This permits the precise observation of growth mechanisms and the identification of defects responsible for inhomogeneities in the growth morphology, as well as the determination of dopant incorporation throughout the structure. STL permits the relative quantum efficiency of individual quantum wires to be quantified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112978
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  • 10
    Electronic Resource
    Electronic Resource
    Semiconductor characterization with the scanning surface harmonic microscope (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2045-2047 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The scanning surface harmonic microscope, in which a microwave signal is applied across a tip-sample tunneling gap and higher harmonics are detected, is sensitive to the capacitance/voltage characteristics of semiconductor samples on a nanometer scale. We demonstrate its sensitivity to a wide range of dopant concentrations on Si, and its applications as a dopant profiler. Depletion regions are delineated with remarkable sensitivity, and variations in dopant concentration over a 35-nm scale are discussed. Indications of a 5 nm resolution have been obtained. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112788
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