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  • 1
    Electronic Resource
    Electronic Resource
    A simple method for monolithic fabrication of InGaAsP/GaAs lasers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2770-2772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple method for the fabrication of Fabry–Perot mirrors of InGaAsP/GaAs lasers is presented. The vertical and smooth wall etching is done for active layers only (not for both active and cladding layers), by an H2SO4:H2O2:H2O=3:1:1 etchant for 2–5 s. Since the active layers are much thinner than the cladding layers, the etching becomes much easier. The threshold current density of the etched mirror laser is ∼4.4 kA/cm2, about 1.1 times that of the cleaved laser, and the mirror reflectivity is evaluated as 29.4% (cleaved 31.4%).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341626
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of phosphorus vapor ambient for InGaAsP growth on GaAs substrate (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3895-3899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 °C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (λPL=805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of the grown layer is also found to be changed. As a result of increasing the flow rate of H2 gas in order to protect the solution for the active layer from phosphorus contamination, the double heterostructure wafers with the high-quality active layer can be obtained reproducibly. Thus, pulsed lasing operation at room temperature has been achieved. The lasing wavelength is 816 nm and the threshold current density is ∼4.6 kA/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337562
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  • 3
    Electronic Resource
    Electronic Resource
    Lasing characteristics of 0.8-μm InGaAsP/GaAs lasers fabricated by wet chemical etching (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3767-3772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 0.8-μm InGaAsP/GaAs stripe lasers, in which cavity mirrors were formed by two-step wet chemical etching, have been fabricated monolithically. The laser resonators were aligned along the 〈011¯〉 and the 〈010〉 directions. The first etching was done in 5% Br methanol. The secondary etching was done in H2SO4:H2O2:H2O (3:1:1 by volume) etchant for the active layers only, and gave low threshold lasers. Their threshold current densities were compared with those of the cleaved-mirror lasers made from the same wafer. Some longitudinal lasing modes were observed in the wavelength range of 805–810 nm. The characteristic temperature T0 was 116 K in the temperature range 28–87 °C. The relationship between the state of the etched facets and the near- and far-field patterns was examined. It was found that this two-step etching technique for the laser mirrors is very suitable for aligning the lasers along desirable directions on the same wafer for monolithic integrated optical circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343387
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  • 4
    Electronic Resource
    Electronic Resource
    Analysis of memory retention characteristics of ferroelectric field effect transistors using a simple metal–ferroelectric–metal–insulator–semiconductor structure (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7471-7476 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Memory retention characteristics of metal–ferroelectric–metal–insulator–semiconductor (MFMIS) field effect transistors (FETs) were investigated in detail using a simple structure, referred to as quasi-MFMIS, in which one electrode of the metal–ferroelectric–metal (MFM) capacitor is connected to a gate electrode of a conventional metal–oxide–semiconductors (MOS) FET using an external interconnection cable. It was found that the memory window of the MFMIS FET was quickly lost (after about 1000 s) and from a comparison with simulations, this was attributed mainly to a decrease in ferroelectric polarization due to a depolarization field inevitably remaining in the ferroelectric film during memory retention. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369381
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  • 5
    Electronic Resource
    Electronic Resource
    Glycogen in the Ligated Silkworm Pupa ( Bombyx mori ) (1957)
    [s.l.] : Nature Publishing Group
    Nature 179 (1957), S. 1136-1137 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Young pupaa of Bombyx mori (within about 15 hr. after pupation) deprived of the prothoracic glands cannot develop further and remain at this stage until death. By implanting the same glands from intact donor pupae into such young ectomized pupsa, imaginal differentiation is resumed and finally ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/1791136a0
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of Dietary Ascorbic Acid on the Silkworm, Bombyx Mori (1961)
    [s.l.] : Nature Publishing Group
    Nature 192 (1961), S. 951-952 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] THERE are a few papers suggesting the impor-X tance of ascorbic acid in the nutrition of the silkworm, Bombyx m,ori. Gamo1 showed that the content of ascorbic acid in fresh mulberry leaves changed in relation to conditions influencing the food value of leaves, and that the amount of ascorbic acid ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/192951a0
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  • 7
    Electronic Resource
    Electronic Resource
    Sterol Requirements of the Silkworm, Bombyx Mori (1961)
    [s.l.] : Nature Publishing Group
    Nature 191 (1961), S. 882-883 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] IN a previous paper11 showed that soybean oil was necessary for the sub-optimal growth of the silkworm, Bombyx mori, and that no larva reached the second instar without oil, so far as the diet, containing 10 per cent mulberry leaf powder, 14 per cent cellulose powder, and other nutrients such as ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/191882a0
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  • 8
    Electronic Resource
    Electronic Resource
    Vitamin Requirements of the Silkworm (1963)
    [s.l.] : Nature Publishing Group
    Nature 197 (1963), S. 98-99 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The composition of synthetic diets, somewhat modified from previous ones8'4, is given in Table 1. The diets contained 0-8 per cent of mulberry leaf extracts, which had been proved to be required for good growth and feeding7. The procedure of separation of leaf extracts is outlined in Fig. 1. Each ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/197098a0
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  • 9
    Electronic Resource
    Electronic Resource
    Nutritive Values of Carbohydrates for the Silkworm, Bombyx mori (1960)
    [s.l.] : Nature Publishing Group
    Nature 187 (1960), S. 527-527 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Newly moulted, unfed fifth instar larvae were used. All substances were supplied in the form of either a solution or a suspension and no leaf was offered to the larvae2. A hypodermic needle mounted on a syringe was inserted from the mouth opening into the gut lumen and a known volume of such a ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/187527a0
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  • 10
    Electronic Resource
    Electronic Resource
    A study of the oögenesis of Mespilia globulus (Linné) (1941)
    New York, NY : Wiley-Blackwell
    Journal of Morphology 69 (1941), S. 347-404 
    Details
    ISSN: 0362-2525
    Keywords: Life and Medical Sciences ; Cell & Developmental Biology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Biology , Medicine
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jmor.1050690210
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