Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
70 (1997), S. 1137-1139
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In situ electron-spin-resonance (ESR) measurements of film growth of hydrogenated amorphous silicon (a-Si:H) using a remote hydrogen plasma technique have been performed. The Si dangling-bond signal in a-Si:H during and after deposition has been detected, in addition to the gas-phase ESR signals both of atomic hydrogen and radicals related with silane molecules. Dynamic changes of the Si dangling-bond signal intensity have been observed in real-time, where the signal intensity increases with deposition time and decreases after stopping the deposition due to a structural relaxation. High potentiality of in situ ESR techniques for microscopic understanding of film growth and surface reaction has been demonstrated. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119073
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