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  • 1
    Electronic Resource
    Electronic Resource
    Theoretical investigations on electron trap generation by fluorine atoms in SiO2 film (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6345-6349 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical investigation on the influence of F atoms incorporated into a thermal SiO2 film is presented. Energetics on the reaction of F atoms with the SiO2 film and the generation of electron traps are discussed using ab initio molecular orbital calculations. The computational result shows that a F atom dissociates a Si—O bond and generates OSi≡ moiety which can trap an electron. This gives a qualitatively appropriate explanation for the experimental result that F incorporated atoms into the SiO2 film generate electron traps. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359105
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  • 2
    Electronic Resource
    Electronic Resource
    Chemical structure and reactivity of a silicon single crystal surface fluorinated by xenon fluoride (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3140-3143 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reconstructed Si single crystal surface was fluorinated using xenon fluoride. All dangling bonds on the 2×1 reconstructed surface of Si(100) were terminated by fluorine atoms, and Si—F bonds were generated. However, dimer bonds remained after the treatment. This is different from the situation where dimer bonds are easily terminated by hydrogen atoms in a hydrogenation treatment. A bulky Si—F group is considered to sterically hinder fluorine termination of a dimer bond. Also, only an adatom bond seems to be terminated by a fluorine atom in the fluorination treatment of a Si(111) 7×7 reconstructed surface. When the fluorinated Si(100) surface was exposed to the atmosphere, dimer bonds were observed to be oxidized immediately. Also following the reaction, the backbond of the Si—F group is oxidized and the S—F bond itself was hydrolyzed. The fluorinated surface, which is chemically active, differs from the hydrogen-passivated surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357496
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  • 3
    Electronic Resource
    Electronic Resource
    XPS study of an ion sputtering process of fluoropolymers using Monte Carlo simulation (1987)
    s.l. : American Chemical Society
    Macromolecules 20 (1987), S. 404-407 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00168a029
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  • 4
    Electronic Resource
    Electronic Resource
    Raman spectra of diamondlike amorphous carbon films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6464-6468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of diamondlike amorphous carbon (a-C) films prepared under atmosphere with various hydrogen gas content have been measured as a function of excitation wavelength. The Raman spectral profiles vary with excitation wavelength depending on electronic absorption spectra associated with π-π* electronic transitions. Dependence of Raman spectra on excitation wavelength is interpreted in terms of π-π* resonant Raman scattering from aromatic rings with various sizes rather than polyene chains. The relative intensity of a 1400 cm−1 band against a 1530 cm−1 band is found to decrease with an increase of sp3 content in a-C films. It is shown that the relative intensity can be used as a parameter for sp3 content.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342063
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  • 5
    Electronic Resource
    Electronic Resource
    Charge transfer adsorption in silicon vapor-phase epitaxial growth (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 390-394 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon vapor-phase epitaxial growth with SiH2Cl2 is theoretically studied. The optimized geometries and total energies of the species, generated from SiH2Cl2, are calculated by using an ab initio molecular orbital method. The charge transfer of the interaction between a silicon surface and SiCl2 is considered. Based on the computational result that SiCl−2 has the lower total energy that SiCl2, a new adsorption mechanism, named charge transfer adsorption, is proposed. By using this charge transfer adsorption followed by the surface reaction at the hollow bridge site, the epitaxial growths on the silicon (001), (111), and (110) surfaces are discussed. The epitaxial growths take place in different ways for these three surfaces because of the specific locations of the hollow bridge sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340250
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of evaporated thin films of merocyanine dyes (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 237-240 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vacuum evaporation of a merocyanine dye, 3-ethyl-5 [2-(3-ethyl-2-benzothiazolidene) ethyldene]-2-thioxo-4-thiazolidione, onto different substrates such as bare and surface-oxidized silicon wafers and a quartz glass substrate is done. There is a difference in color between a film deposited on the bare silicon substrate and one on either a quartz glass plate or a silicon wafer with a thick (96.5-nm) oxide layer. The dye film on quartz has an absorption maximum at 560 nm, whereas that on bare silicon has one at 582 nm. The bare crystalline silicon surface may give dye molecules more opportunity to aggregate than amorphous silicon dioxide or quartz surfaces. The dye molecules are preferentially oriented along the [100] direction of the substrate crystal, with the carbonyl group parallel to and the conjugated aromatic plane perpendicular to the substrate surface, although there is no detectable difference of orientation between the films deposited on these different substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345287
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  • 7
    Electronic Resource
    Electronic Resource
    Low-temperature and selective growth of β-SiC using the SiH2Cl2/C3H8/H2/HCl gas system (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4535-4537 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: β-SiC is grown on a Si (100) substrate by the chemical vapor deposition method using the SiH2Cl2/C3H8/H2/HCl/ gas system. The addition of HCl to the SiH2Cl2/C3H8/H2 gas system makes it possible to grow stoichiometric β-SiC at the low temperature of 1000 °C. Moreover, β-SiC selective deposition on a Si (100) surface, with no nucelation on a SiO2 surface, is achieved in more than 1.5% HCl concentration. The mechanism of low-temperature selective β-SiC growth due to HCl addition is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343922
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  • 8
    Electronic Resource
    Electronic Resource
    Prebaking and silicon epitaxial growth enhanced by UV radiation (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2224-2229 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: UV light irradiation effects on prebaking and silicon epitaxial growth is studied. An ArF excimer laser, a KrF excimer laser, and a Hg-Xe lamp are used as light sources. The epitaxial growth is carried out using a SiH2Cl2/H2 system under reduced pressure. ArF radiation and Hg-Xe radiation are found to be effective for volatilizing native SiO2 on silicon-substrate surfaces even at low temperatures. When a substrate surface is irradiated with these UV radiations during prebaking and epitaxial growth, epilayer surface morphology and crystalline quality are much improved. Furthermore, the epitaxial growth rate seems to be enhanced photothermally by excimer laser radiations, and photochemically by Hg-Xe radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337983
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  • 9
    Electronic Resource
    Electronic Resource
    Control of the chemical reactivity of a silicon single-crystal surface using the chemical modification technique (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2187-2191 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique is developed to control the chemical reactivity of a silicon single-crystal surface through chemical modification with atomic hydrogen. The reactivity of the reconstructed single-crystal surface prepared by high-temperature treatment in an ultrahigh vacuum is significantly decreased by capping the dangling bonds of top-layer silicon atoms with hydrogen atoms. The Si—H bonds on the hydrogenated surface are found to be much more stable against oxidation than the Si—Si back bonds. The hydrogen-passivated silicon surface is reactivated by electron beam irradiation. An ultrathin oxide layer pattern can be prepared using preferential oxidation of the area reactivated by a focused electron beam.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346521
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  • 10
    Electronic Resource
    Electronic Resource
    Raman scattering from nanometer-sized diamond (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 694-696 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured Raman spectra of diamond with nanometer size, called cluster diamond. The Raman bands assigned to sp2 and sp3 clusters have been observed at around 1600 and 1322 cm−1, respectively. This result suggests that the cluster diamond slightly contains the sp2 cluster. The Raman band assigned to sp3 cluster is found to shift by −10 cm−1, compared with that of bulk crystal and to be asymmetric with some tailing toward lower Raman frequency. The observed Raman spectrum agrees well with that calculated by a phonon confinement model. The crystallite size of the cluster diamond estimated from the phonon confinement model agrees approximately with that estimated from x-ray measurement. Raman spectroscopy gives some information about the crystallite size of diamond particles with nanometer size. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115206
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