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  • 1
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition diamond window for high-power and long pulse millimeter wave transmission (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2160-2165 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: To satisfy the electrical and thermomechanical requirements for a continuous wave millimeter wave beam transmission, a window assembly using a large size synthesized diamond disk has been developed. Such window systems are needed as a vacuum barrier and tritium shielding in future electron cyclotron heating systems for fusion plasma heating and noninductive electron cyclotron current drive. The diamond used in this study was manufactured by chemical vapor deposition (CVD) and consists of a polycrystalline diamond disk 96 mm in diameter and 2.23 mm thick. The disk was built into an assembly in which two Inconel tubes were bonded on both sides of the plate to provide vacuum shielding and water cooling to the edge of the disk, leaving an effective window aperture of 83 mm. It will be shown that, as a result of the high thermal conductivity and low dielectric loss exhibited by this grade of CVD diamond, the temperature increase of the window due to the absorption of high-power millimeter wave radiation could be minimized by simple water edge cooling at room temperature. During transmission of a focused Gaussian beam of 170 GHz, 110 kW, 10 s, the temperature increase at the center of the window reached a steady state condition at a value of approximately 40 K, in good agreement with calculated values. Water-edge-cooled CVD diamond windows promise to provide a practical technical solution for the transmission of continuous millimeter wave transmission in excess of 1 MW. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148916
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  • 2
    Electronic Resource
    Electronic Resource
    The heteroepitaxial growth of ZnSe on GaP and GaAs substrates (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4920-4922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal layers of ZnSe have been grown on GaP and GaAs substrates in a hydrogen transport system. By the use of the H2 bypass flow, the growth rate versus substrate temperature characteristics are found to be modified. The growth on GaP (111)B substrates is limited by thermodynamic mass transport and that on GaP (100) substrates by the kinetics of the surface chemical reaction. ZnSe layers grown on the GaAs (100) face have larger growth rates and smoother surface morphologies than those on GaP (100). This result may originate from the lattice parameter mismatch between the epitaxial layers and the substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338359
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  • 3
    Electronic Resource
    Electronic Resource
    Indium doping effects on vapor-phase growth of ZnS on GaP (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1761-1763 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal layers of ZnS have been grown on GaP substrates in a hydrogen transport system. By the addition of In to the reactant agents, the orientation dependence of the growth rates of ZnS are reversed for (111)A and (111)B substrates. The improvement of crystallinity of the grown layers can be seen by the surface morphology observation and x-ray and reflection high-energy electron diffraction analyses. These phenomena are undoubtedly caused by the In-incorporation effects during the epitaxial growth of ZnS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336443
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  • 4
    Electronic Resource
    Electronic Resource
    Some properties of Zn3P2 polycrystalline films prepared by hot-wall deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2368-2371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc phosphide (Zn3P2) thin films have been deposited by hot-wall deposition technique on glass substrate, and the deposition behaviors as well as structural properties of deposited films are studied. The source temperature and the temperature difference between source and substrate mainly affect the growth rate. Scanning electron microscope observation indicates the growth of columnar structure perpendicular to the substrate, and highly oriented thin films along the c axis are confirmed by x-ray diffraction analyses. The resistivity of the films is strongly related to the phosphorus composition X in Zn(1−X)PX, and the films having higher X show lower resistivity. The direct absorption edge is obtained as about 1.5 eV from the optical absorption data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337147
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  • 5
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition diamond window as vacuum and tritium confinement barrier for fusion application (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 4139-4143 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A pressure resistant polycrystalline chemical vapor deposition (CVD) diamond disk for a microwave window is used for a vacuum and a tritium confinement boundary in fusion applications. A pressure test of a CVD diamond window disk (2.25 mm in thickness and 100 mm in diameter) was carried out. It was demonstrated that the diamond window tolerated 1.0 MPa (10 atm) in the plenum. The displacement of the window center for both the growth and the nucleation side on the unpressurized side is 40±1 and 41±1 μm, respectively, at the pressure of 1.0 MPa, and these values agree well with those calculated. No damage in the disk and the braze, and no vacuum leakage in the assembly was observed. This result demonstrates that the diamond window assembly could tolerate up to 1.45 MPa. It was experimentally proved that the diamond window satisfied the safety requirement of 0.5 MPa resistance for the vacuum and the tritium confinement boundary of an International Thermonuclear Experimental Reactor. The design prospect for the diamond window of the electron cyclotron heating and current drive system is also discussed, based on the stress analysis using the ABAQUS code. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1313799
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  • 6
    Electronic Resource
    Electronic Resource
    Additions and Corrections - Organoboron Compounds in Organic Synthesis. 1. Asymmetric Hydroboration. (1985)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 107 (1985), S. 5832-5832 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00306a604
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  • 7
    Electronic Resource
    Electronic Resource
    Development of a large volume negative-ion source for ITER neutral beam injector : Papers from the Ninth International Conference on Ion Sources (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 1090-1092 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Development of the negative-ion sources has been conducted to realize a high power neutral beam injector for International Thermonuclear Experimental Reactor (ITER). A high negative-ion current density of 31 mA/cm2 (H−) at a very low pressure of 0.1 Pa has been produced in a cesium seeded multicusp plasma generator which has the same concept of the ITER source. For a vacuum insulated accelerator, a voltage holding experiment of long distance vacuum gaps up to ∼1.8 m has been performed. It was clarified that the transition region of product pressure distance (pd) from the vacuum breakdown to the gas discharge is about 0.2 Pa m which is high enough from the operating region of the ITER source. A prototype vacuum insulated accelerator was fabricated based on the experiment and tested. A high-energy H− beam acceleration up to 970 keV, 37 mA, and 1 s has been successfully demonstrated. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1431422
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  • 8
    Electronic Resource
    Electronic Resource
    Partition Distribution of Aroma Volatiles from Orange Juice into Selected Polymeric Sealant Films (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 55 (1990), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: The sorption of organic volatiles from orange juice by polymeric food contact materials was investigated. Three sealant films were evaluated, a commercial low density polyethylene and two developmental films, an ethylene vinyl alcohol copolymer of high ethylene content and a co-polyester. Samples of the films were immersed in the juice for 24 days at 22°C and the level of sorbed volatiles monitored as a function of time. Three probe compounds (d-limonene, neral and geranial) were selected as being representative of orange juice flavor components. A gas chromatographic technique was developed to quantify the level of probe compounds in juice and films. Results compared favorably to the more traditional bromide-bromate titration method. Sorption of organic volatiles by one of the developmental films (co-polyester) was significantly lower than the others.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1990.tb06041.x
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  • 9
    Electronic Resource
    Electronic Resource
    Adsorption of Methyl Orange on Starches (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 56 (1991), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Adsorption characteristics of methyl orange were investigated on kudzu, sweet potato, corn, rice, wheat, potato and snake gourd starches. No adsorption of methyl orange, an anionic dye, was observed on potato starch and snake gourd starch because of the presence of phosphate esters. Adsorption isotherms were found to fit both the Langmuir equation and Freundlich equation in all others. The degree of adsorption by kudzu, sweet potato, corn and wheat starches was related to the number of hydroxyl groups. We suggested methyl orange was confined to a monolayer on surface hydroxyl groups of the starches.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1991.tb07982.x
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  • 10
    Electronic Resource
    Electronic Resource
    Preparation of High-Molecular-Weight DNA: Application to Mycobacterial Cells
    Amsterdam : Elsevier
    Analytical Biochemistry 222 (1994), S. 479-482 
    Details
    ISSN: 0003-2697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1006/abio.1994.1520
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