Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 228-230
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the fabrication and characterization of lateral metal-semiconductor-metal (MSM) photodiodes on an InP substrate. The photoabsorbing layer is made of InGaAs covered by a thin InP Schottky barrier enhancement layer. Schottky contacts for the detectors were formed by the evaporation of Au and patterned using a lift-off technique. The MSM photodiodes exhibit a dark current lower than 200 nA at 15-V bias, an efficient photoresponse up to 1.6 μm, and a fast deconvoluted full width at half maximum response of about 25 ps at 12-V bias.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112637
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