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  • 1
    Electronic Resource
    Electronic Resource
    Al intermediate oxidation states observed by core level photoemission spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4091-4098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum oxidation states in stoichiometric or substoichiometric configuration are studied by core level photoemission spectroscopy on different substrates (SiO2, graphite). They are compared with recent results reported for the interface Si–Aln+O. Three Al oxidation states have been identified and their space distribution (binding energy, intensity, and width) is determined in the region from the interface with the substrate up to the surface of a thick overlayer. The Al2+–O intermediate oxidation state is shown to be confined at the interface; on the contrary, the Al1+–O oxidation state and the stoichiometric oxide (alumina) are present beyond the interface region. From the attenuation of the substrate core level peak, the deposition morphology and the attenuation length of the photoelectrons have been deduced. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359866
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  • 2
    Electronic Resource
    Electronic Resource
    Coherence-enhanced synchrotron radiology: Refraction versus diffraction mechanisms (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4613-4618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tests performed in different regimes reveal the interplay of two edge-enhancement mechanisms in radiological images taken with coherent synchrotron light. The relative weight of the two mechanisms, related to refraction and to Fresnel edge diffraction, can be changed in a controlled way. This makes it possible to obtain different images of the same object with complementary information. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371411
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  • 3
    Electronic Resource
    Electronic Resource
    Evidence for Pd bonding with Si intermediate oxidation states (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 749-754 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bonding of Pd atoms evaporated on a thin layer of silicon intermediate oxidation states has been studied by core level and valence band photoemission spectroscopy. The particular substrate was obtained by controlled exposure of a cleaved Si surface to oxygen in order to have few angstroms of silicon oxidation states with a small percentage of SiO2. The deposition of Pd on this substrate was investigated studying the Pd 3d and Si 2p core level spectra as well as the valence band as a function of the metal coverage. Our results indicate evidence that the pristine Si intermediate oxidation states modify their configuration and bind metal atoms. In fact in the Si 2p spectrum changes in the chemical shift are observed for these states, and new peaks arise whose areas increase with metal coverage. The three-dimensional growth characteristics of the metal are deduced from the behavior of the relative intensity for the different components of the Si 2p core spectrum. Furthermore, the shifts of the Pd 3d core level and of the Fermi edge towards higher binding energies at low coverage confirm the formation of metal islands on a nonconducting substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353332
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  • 4
    Electronic Resource
    Electronic Resource
    Valence-band states of ion-bombarded polystyrene (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1885-1887 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-bombarded polystyrene with a 0.5-keV Ar+ beam has been investigated by means of photoelectron spectroscopy performed with synchrotron radiation. After a dose of 1015 ions/cm2 the evolution of the valence band of the bombarded sample towards an amorphous carbonlike configuration is reported. From the analysis of valence-band spectra we estimated the out-diffusion of hydrogen and showed that its electronic states remain well identified and stable until the hydrogen presence is about 35% with respect to the pristine sample. Finally, comparison with mass spectroscopy measurements on deuterated polystyrene has been performed to determine hydrogen evolution during the ion irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349491
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  • 5
    Electronic Resource
    Electronic Resource
    Microscopic manipulation of homojunction band lineups (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2048-2050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We tested the theoretical prediction that the band structures on the opposite sides of a homojunction can be artificially displaced in energy with respect to each other by means of double intralayers of atomiclike thickness, producing band discontinuities of potential interest for practical applications. Evidence of such discontinuities was found when Ga-As, Al-As, Ga-P, or Al-P intralayers were inserted between Si and Si or Ge and Ge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351152
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  • 6
    Electronic Resource
    Electronic Resource
    Silver-BiSrCaCuO chemical reactions (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2139-2141 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We used synchrotron-radiation photoemission to investigate the chemical reactions that occur during the silver cladding process of BiSrCaCuO−used to increase the critical current density by over a factor of 50. We find that the Cu-O planes are not directly affected by the chemical reaction, and that such a reaction strongly affects the Bi and Sr atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103921
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  • 7
    Electronic Resource
    Electronic Resource
    Chemical inhomogeneity and reactions of BiSrCaCuO surfaces detected by synchrotron imaging spectromicroscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2924-2926 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microscopic chemical analysis of BiSrCaCuO (BSCCO) 2212 single crystals was performed with an unprecedented combination of high (submicron) lateral resolution and high energy resolution (100 meV or better). These performances, achieved with imaging synchrotron spectromicroscopy, enabled us to detect in a very small fraction of the investigated specimens, morphological and chemical inhomogeneities. Specifically, we found deviations from stoichiometry in the surface Sr content which have a subtle effect on the chemical environment of at least one other element, Ca. The different chemical environment was found to influence surface chemical reactions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117325
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  • 8
    Electronic Resource
    Electronic Resource
    Strain relaxation in Fe3(Al,Si)/GaAs: An x-ray scattering study (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1528-1530 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice strain of epitaxially grown single crystal Fe3(Al,Si)/GaAs films was measured in a synchrotron x-ray scattering experiment. The Fe3Al film (2.5% lattice mismatch) was partially strained and tetragonally distorted at room temperature. As the sample was annealed to 500 °C, the internal strain was mostly relaxed while the tegragonal distortion was greatly reduced. We believe that the strain relaxation was caused by the interdiffusion of atoms through domain boundaries at elevated temperatures. In comparison, the Fe3Si film with much less lattice mismatch (0.17%) was completely strained up to 600 °C without being relaxed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115688
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  • 9
    Electronic Resource
    Electronic Resource
    Evidence for surface chemical reactions between gold and BiCaSrCuO (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 979-981 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explored the reactivity of gold on cleaved 2212 BiCaSrCuO by synchrotron-radiation photoemission spectroscopy. We found no evidence for reactivity when the substrate was at room temperature, similar to what has been reported for very low temperatures (20 K). At intermediate temperatures (100 K), however, clear evidence was found of a chemical reaction with formation of a localized nonmetallic phase. These findings have potentially important implications for the manufacturing of devices based on BiCaSrCuO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106320
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  • 10
    Electronic Resource
    Electronic Resource
    Coherence based contrast enhancement in x-ray radiography with a photoelectron microscope (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2377-2379 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that a photoelectron spectromicroscope of the photoelectron emission microscope type can be used as an x-ray imaging detector for radiology. Using high penetration hard-x-ray photons (wavelength 〈0.1 nm), samples as thick as a few millimeters can be imaged with submicron resolution. The high imaging resolution enables us to substantially decrease the object-detector distance needed to observe coherent based contrast enhancement with respect to the standard film-based detection technique. Our result implies several advantages, the most important being a marked reduction of the required source emittance for contrast enhanced radiology. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125020
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