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  • 1
    Electronic Resource
    Electronic Resource
    Preparation and electrical properties of Bi2S3 whiskers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1376-1378 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi2S3 whiskers ∼10 mm long were synthesized from vapor phase. The electrical conductivities of the resulting whiskers (along the longitudinal direction) were ∼101 S cm−1 at around room temperature and their temperature coefficient was negative. The growing direction was in the direction of the crystallographic c axis, which is parallel to the direction of running chains composed of (Bi4S6)n. The measurements of electrical conductivities in sulfur-free and sulfur-loading atmosphere strongly suggest that carrier electrons are generated through the formation of sulfur deficiencies. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360315
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  • 2
    Electronic Resource
    Electronic Resource
    Generation of electron carriers in insulating thin film of MgIn2O4 spinel by Li+ implantation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7935-7941 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Li+ implantation at room temperature of insulating thin films of polycrystalline MgIn2O4 spinel (∼1.3 μm thick) was found to generate electron carriers efficiently. Li+ ions were implanted at 80 keV to a fluence of 1×1016 cm−2 and subsequently at 160 keV to the same fluence. Some implanted films were subjected to a post-annealing at 300 °C. Depth profiles of implanted Li+ ions measured with secondary-ion-mass spectroscopy agreed with that calculated with the trim code. Conductivity at room temperature increased from σ〈10−7 to ∼101 S cm−1 upon the Li+ implantation. The generation yield of electron carriers in the as-implanted film was ∼20% and increased up to ∼40% upon post-annealing. Two optical-absorption bands were induced upon the implantation, one at about ∼500 nm and another above ∼1000 nm extending to the IR region, which was attributed to plasma oscillation of electron carriers. The former band faded and the latter absorption increased its intensity upon post-annealing. He+ implantation, which was done for comparison, induced no change in electrical conductivity and no absorption band above ∼1000 nm. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357904
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1790-1793 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent p-type conducting CuGaO2 thin films were prepared on α-Al2O3 (001) single-crystal substrates by pulsed laser deposition. The films were grown epitaxially on the substrates in an as-deposited state. X-ray pole figure analysis revealed that the films were composed of two types of epitaxial grains, both with c axes oriented perpendicular to the surface and a axes rotated 60° with respect to each other around the c axis. Observation of the CuGaO2 thin films by atomic force microscopy and high-resolution transmission electron microscopy substantiated this conclusion. The films have high optical transparency (∼80%) in the visible region, and the energy gap of CuGaO2 for direct allowed transition was estimated to be 3.6 eV. p-type conductivity was confirmed by Seebeck and Hall measurements. The electrical conductivity, carrier (positive hole) density, and Hall mobility of the films at room temperature were 6.3×10−2 S cm−1, 1.7×1018 cm−3, and 0.23 cm2 V−1 s−1, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337587
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  • 4
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance spectroscopy of titanium-ion-implanted silica (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7526-7530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silica substrates were implanted with titanium ions, in the +1 charge state, to nominal doses of 1×1016, 3×1016, and 6×1016 ions/cm2 at an energy of 160 keV and a current of 2.5 μA/cm2. The implanted ion depth profiles were measured by backscattering techniques. Components in the vacuum ultraviolet absorption and electron paramagnetic resonance (EPR) spectra are attributed to a fraction of the implanted titanium in the Ti3+ state. The intensity of the Ti3+ EPR component has a Boltzmann temperature dependence between 490 and 5 K. The fraction of implanted titanium ions producing this EPR component ranges from 10% for doses of 6×1016 and 3×1016 ions/cm2 to 38% for a dose of 1×1016 ions/cm2. Based on the relative intensities of the Ti3+ charge transfer band resolved in optical absorption measurements, the fraction of Ti ions in the 3+ state is larger than the fraction estimated from the EPR spectral component. The Ti3+ ions not contributing to the EPR spectra are assumed to be antiferromagnetically (or speromagnetically) coupled. The linewidth of the EPR component decreases with increasing implantation dose. The value for the exchange integral for the paramagnetic fraction of implanted titanium ions is approximately (1.3±0.4)×10−6 eV. The fraction of Ti3+ ions antiferromagnetically coupled increases with increasing ion concentration. Thus a smaller fraction of Ti3+ ions are detected by EPR as the implantation dose is increased. A greater fraction of the titanium ions are incorporated in the SiO2 glass substrate in the Ti3+ state by ion implantation than are introduced in the 3+ state by other techniques such as fusion, reduction of Ti4+, and flame hydrolysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345814
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  • 5
    Electronic Resource
    Electronic Resource
    Carrier generation in highly oriented WO3 films by proton or helium implantation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2017-2022 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantation of H+ or He+ ions into highly oriented WO3 films, which were deposited on sapphire R-plane substrates by the pulsed laser deposition method, was carried out to generate carrier electrons. X-ray diffraction measurements revealed that the films consisted of only the two types of grains that were epitaxially grown with their c axes perpendicular to the surface of the substrate. After implantation to a dose of 1×1017 cm−2, a remarkable increase in conductivity at 300 K was observed to 200 Scm−1 for H+ implantation or to 3 Scm−1 for He+ implantation. The efficiency of carrier generation was ∼60% for H+ implantation or ∼10−3% for He+ implantation. This striking difference demonstrates that the chemical effect of bronze formation is much more effective for carrier generation in WO3 than is the physical effect of oxygen vacancy formation by nuclear collision processes. The resulting conductivity of the oriented films was higher by 1–3 orders of magnitude than that of the corresponding polycrystalline film prepared by the rf sputtering method. Hall mobility in the oriented films (∼1 cm2 V−1 s−1) was as high as that (1–2 cm2 V−1 s−1) in single-crystal Na0.40WO3 or WO2.99 and was higher by several orders of magnitude than that in polycrystalline films. The results of Hall voltage and x-ray diffraction measurements led to the conclusion that the higher conductivity in the highly oriented films mainly originates from an increase in carrier mobility, which results from decreases in grain boundary effects as scattering centers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1496120
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  • 6
    Electronic Resource
    Electronic Resource
    Two-photon processes in defect formation by excimer lasers in synthetic silica glass (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1891-1893 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect formation in dehydrated silica glasses was investigated using various excimer lasers with different energies. The ArF laser (6.4 eV) generates the E' center more effectively than the KrF laser (5.0 eV), while the XeCl laser (4.0 eV) generated no centers. Defect generation was found to be proportional to the square of the laser photon density, indicating that it occurs dominantly due to a two-photon process which makes band-to-band excitation possible. The E' center probably originated from oxygen-deficient centers. Contributions to the E' center formation from a process involving direct absorption at the sites of intrinsic defects in SiO2 glass were discussed on the basis of the excitation energy dependence and a comparison with the effect of a low-pressure mercury lamp.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100362
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  • 7
    Electronic Resource
    Electronic Resource
    Transparent p-type semiconductor: LaCuOS layered oxysulfide (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2701-2703 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: La1−xSrxCuOS (x=0, 0.05) thin films prepared by radio-frequency sputtering were found to have high optical transmission (≥70%) at the visible and near-infrared wavelengths and an energy gap of about 3.1 eV. The dc electrical conductivities of x=0 and 0.05 thin films at room temperature were 1.2×10−2 and 2.6×10−1 S cm−1, respectively. The Seebeck coefficients of these samples were positive, indicating that p-type electrical conduction is dominant in these materials. A sharp photoluminescence peak, probably originating from an interband transition, was observed at the optical absorption edge. The present study demonstrates that LaCuOS is a promising transparent p-type semiconductor for optoelectronic applications. Moreover, our material design, based on chemical modulation of the valence band, was successfully extended to oxysulfide systems. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319507
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  • 8
    Electronic Resource
    Electronic Resource
    Room-temperature excitons in wide-gap layered-oxysulfide semiconductor: LaCuOS (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2333-2335 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sharp optical absorption and emission peaks near the band gap (Eg(approximate)3.1 eV) were observed in LaCuOS polycrystalline thin films at room temperature. The absorption peak was able to be detected at temperatures as high as 490 K, and its intensity remarkably increased with decreasing temperature. The spectral position of the absorption peak and its temperature dependence almost agreed with those of the emission peak. It was concluded that the sharp absorption and emission peaks originate from excitons. On the basis of semiquantitative consideration about the excitons, it is suggested that the electronic-structure characteristic of the layered-crystal structure of LaCuOS is responsible for the stability of the excitons. The observation of the exciton absorption and emission at room temperature revealed that LaCuOS is a promising material for optoelectronic applications such as light-emitting devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1364656
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  • 9
    Electronic Resource
    Electronic Resource
    Detection and analysis of anisotropic thallium(2+) centers in glass (1982)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 86 (1982), S. 161-164 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100391a004
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  • 10
    Electronic Resource
    Electronic Resource
    Ion-solid chemistry in implanted amorphous SiO"2
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 91 (1994), S. 510-514 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0168-583X(94)96276-6
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