Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 1495-1497
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Midinfrared emission on violet, blue, and green InGaN light-emitting diodes has been measured between 85 and 300 K for various injection current densities. We found that the diode with the highest In composition in the active region had the shortest midinfrared emission wavelength and vice versa. With increasing In content, a significantly decreasing amount of TM polarization was observed in the midinfrared emission spectrum. This result suggests that the density of states in the higher-In content devices corresponds to a zero-dimensional electronic system rather than a two-dimensional electron gas. In contrast to this, the violet light-emitting diode exhibited a higher degree of TM polarization; similar to a red InGaP-based quantum-well device. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126074
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