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  • 1
    Electronic Resource
    Electronic Resource
    Interband tunneling through a heavy hole state (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6443-6445 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated interband tunneling transport through a hole well in five GaSb/AlSb/GaSb/AlSb/InAs type II tunnel devices in which the effect of the variation of barrier and well widths is systematically studied. Low temperature measurements were performed using high magnetic fields applied perpendicular to the current and hydrostatic pressures as external perturbations. A resonant current through the ground heavy hole subband in the GaSb well could be identified for the first time. This examination points out (i) the role of in-plane momentum conservation in determining the resonance onset voltage, and (ii) the occurrence of a shoulder in the current when a maximum of states conducts through a resonant subband.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355128
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  • 2
    Electronic Resource
    Electronic Resource
    Small-signal analysis of novel semiconductor superlattice electron-wave interference devices (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1782-1786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linear response of a novel AlxGa1−xAs superlattice electron-wave interference diode (EWID) is numerically investigated using the time-dependent Schrödinger equation. This device is based on analogies between electromagnetic waves in dielectrics and quantum mechanical electron waves in semiconductors. These analogies provide a basis for a new class of highly functional devices which use above-band transport. Recent experimental results and theoretical models showed that the EWID has direct current characteristics similar to the resonant tunneling diode. This first quantum mechanical calculation for the EWID alternating current characteristics shows that the device negative differential resistance (NDR) persists up to about 10 THz. By examining three different EWID designs, it is shown that device parameters, such as the number of layers, have a strong effect on high-frequency performance. The important property of NDR, combined with expected high current densities and possible integration with optoelectronic devices, makes the EWID a good candidate for high speed applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360208
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of ballistic electrons on the device characteristics of vertically integrated resonant tunneling diodes (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1482-1484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a systematic study of the ballistic electron contribution to the current-voltage (I-V) characteristics of vertically integrated resonant tunneling diodes (RTDs) separated by doped spacer layers (Wsp). A magnetic field (B) transverse to the tunneling direction was used to tune the electron's longitudinal energy. The results confirm the isolated circuit element picture of the Wsp=1000 A(ring) sample and the strongly coupled description of the 0 A(ring) sample. This work shows that even for some nominally isolated RTDs (in this work for Wsp= 400 and 500 A(ring)), the I-V characteristics can undergo striking B-induced changes. This effect is due to resonant charge buildup in the well of the collector RTD from the relatively weak ballistic component of the current traversing the doped spacer region. A simple model that includes a calculation of the conduction-band profile and quantum well energy levels under bias gives good agreement with the data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105203
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  • 4
    Electronic Resource
    Electronic Resource
    Quantum and classical lifetimes in a Ga0.49In0.51P/GaAs heterojunction (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2925-2927 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the subband structure of Ga0.49In0.51P/GaAs heterojunctions. High-field (0〈B〈20 T) magnetotransport measurements were performed at low temperatures (4.2 K) under hydrostatic pressure (P〈12 kbar). The strong persistent photoconductivity effect in this system allowed us to tune the two-dimensional electron gas (2DEG) density (N2D) with short light bursts from a red electroluminescent diode. The pressure dependence of N2D shows that in contrast with other systems, pressure effects on the band discontinuity and the effective mass are responsible for the observed density dependence. Both single particle (quantum) and scattering (classical) lifetimes were measured. The ratio of the classical-to-quantum lifetimes was large (≈10) at ambient pressure and confirmed the dominant role of scattering by remote ionized impurities. After illumination, the ratio quickly decreases with increasing 2DEG density. However when pressure is applied, this ratio decreases with decreasing N2D, giving evidence of a pressure-induced misfit strain at the interface that modifies the dominant scattering mechanisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103732
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  • 5
    Electronic Resource
    Electronic Resource
    Bias circuit effects on the current-voltage characteristic of double-barrier tunneling structures: Experimental and theoretical results (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 58-60 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the stable, dc current-voltage (I-V) curve measured from a double-barrier resonant tunneling structure, we have studied the effects of external circuit elements on device oscillations. A simulation, using the experimental I-V and a simple circuit model for the biasing arrangement, showed that hysteresis and vertical jumps appear in the current-voltage curve when the circuit oscillates. This observation is supported by experimental results obtained on the same device with external circuit elements intentionally added to the biasing configuration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103577
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  • 6
    Electronic Resource
    Electronic Resource
    Trajectory domains in a wide-well double-barrier tunneling structure in crossed electric and magnetic fields (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1772-1774 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of transport in crossed electric and magnetic (B) fields in a double-barrier tunneling structure with a wide (600 A(ring)) well at T=1.5 K and 0〈B〈23 T. At B=0 we observe 21 resonances, 11 of which correspond to extended-state resonances for biases 〉0.85 V. Under a transverse magnetic field, the bound resonances evolve into magnetoelectric states and are shifted to higher biases. In the low bias range, for high magnetic fields, additional resonances from barrier-bound skipping states are observed. A semiclassical model for ballistic motion in crossed fields is used to determine boundaries between the different trajectory regimes (i.e., traversing, skipping, bulk-like) in the magnetic field-bias voltage space of the resonances. The model shows excellent quantitative agreement with experiment when nonparabolic corrections to the effective mass are included. In addition, the B-induced shift in the transition from bound to extended-state tunneling resonances is explained with this simple description.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103095
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  • 7
    Electronic Resource
    Electronic Resource
    Transverse magnetic field dependence of the current-voltage characteristics of double-barrier quantum well tunneling structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2540-2542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the effects of a transverse magnetic field (J⊥B) on the conductivity of quantum well tunneling structures based on AlGaAs/GaAs/AlGaAs quantum wells. The current-voltage characteristics in the positive differential resistance regime show negative magnetoconductance for all values of B. The peak bias voltage increases monotonically with increasing B. For B〈6 T there is a decrease in the peak tunneling current, but then it increases for B〉6 T. The data also show dramatic magnetic field induced changes in the negative differential resistance (NDR) features. The behavior of the NDR changes from sharp hysteretic bistable-like transitions to astable NDR transitions. Both the valley current and its bias voltage position increase with increasing magnetic field. This behavior is described by a simple model that includes magnetic field effects across the barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100202
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetotransport studies of charge accumulation in an AlInAs/GaInAs tunneling structure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1908-1910 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the current-voltage characteristics of a double barrier, lattice matched, quantum well tunneling structure in a quantizing magnetic field (B(parallel)J). Experiments were conducted at fields up to 23 T at 1.5 K. The heterostructure investigated had 400 A(ring) spacer layers in the emitter and collector, a barrier width of 72 A(ring), and a 43-A(ring)-wide quantum well. This structure showed one negative differential resistance region with a peak-to-valley ratio of 23 at 4.2 K. We observed magnetoquantum oscillations, periodic in 1/B, associated with tunneling from a quantized state in the emitter. The overall magnetoconductance dramatically changed with applied bias. We associated these variations with a field-induced increase of the impedance of the undoped spacer layers. The frequency of these oscillations increased linearly with applied bias. A discontinuity in this dependence is observed around the peak bias voltage which is the direct result of the dynamical storage and release of charge in the well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101238
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  • 9
    Electronic Resource
    Electronic Resource
    Charge control and geometric magnetoresistance of a gated AlGaAs/GaAs heterojunction transistor (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4431-4437 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured a series of low-temperature transport parameters of AlGaAs/GaAs heterojunction transistors. The techniques used provide direct measurement of the two-dimensional electron gas on the same sample in which standard device characterization tools are applied. This creates an environment for devising and testing realistic device models. The apparent charge density is measured via both Hall and capacitance-voltage measurements and is compared with the two-dimensional electron gas charge measured via Shubnikov–de Haas conductivity oscillations. From this comparison we interpret the charge control of these gated heterojunction devices. Geometric magnetoresistance, magnetotransconductance, and Hall measurements of the mobility are presented and complications arising from the layered structure of the heterojunctions are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335535
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  • 10
    Electronic Resource
    Electronic Resource
    Γ-X intervalley tunneling in InAs/AlSb resonant tunneling diodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1385-1387 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an experimental study of intravalley and intervalley transport in an InAs/AlSb/InAs/AlSb/InAs double barrier resonant tunneling diode at liquid helium temperatures. This work reports the first observation of intervalley tunneling through an InAs Γ-point quasibound state confined by AlSb X-point barriers. The incident energy of tunneling electrons was tuned by a transverse magnetic field (0〈B〈17 T). Self-consistent calculations of the current-voltage relation and a model that includes a transverse wave vector contribution to the magnetic field behavior of the resonances are used to describe the experimental results. From this, we determine that the device current is composed of Γ-point InAs electrons tunneling through X-point AlSb barriers (with large longitudinal effective mass) as well as Γ-point AlSb barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108687
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