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  • 1
    Electronic Resource
    Electronic Resource
    Amorphization and recrystallization of 6H-SiC by ion-beam irradiation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2999-3009 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphization of 6H-SiC with 200 keV Ge+ ions at room temperature and subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 300 keV Si+ ions at 480 °C have been studied by Rutherford backscattering spectrometry/channeling and transmission electron microscopy analysis. Experimental results on amorphous layer thicknesses have been compared with trim calculations in association with the critical energy density model. Density changes during amorphization have been observed by step height measurements. Particular attention has been directed to the crystal quality and a possible polytype transformation during the IBIEC regrowth. The IBIEC process consists of two stages and results in a multilayer structure. In the initial phase an epitaxial growth of 6H-SiC has been obtained. With increasing IBIEC dose the epitaxial growth changes to columnar growth and is stopped by polycrystallization of 3C polytype in the near-surface region. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358649
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  • 2
    Electronic Resource
    Electronic Resource
    Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6907-6913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The analysis of SiC films obtained by carbon ion implantation into amorphous Si (preamorphized by Ge ion implantation) has been performed by infrared and Raman scattering spectroscopies, transmission electron microscopy, Rutherford backscattering, and x-ray photoelectron spectroscopy (XPS). The data obtained show the formation of an amorphous Si1−xCx layer on top of the amorphous Si one by successive Ge and C implantations. The fitting of the XPS spectra indicates the presence of about 70% of Si–C bonds in addition to the Si–Si and C–C ones in the implanted region, with a composition in the range 0.35〈x〈0.6. This points out the existence of a partial chemical order in the layer, in between the cases of perfect mixing and complete chemical order. Recrystallization of the layers has been achieved by ion-beam induced epitaxial crystallization (IBIEC), which gives rise to a nanocrystalline SiC layer. However, recrystallization is not complete, observing still the presence of Si–Si and C–C bonds in an amorphous phase. Moreover, the distribution of the different bonds in the IBIEC processed samples is similar to that from the as-implanted ones. This suggests that during IBIEC homopolar bonds are not broken, and only regions with dominant Si–C heteropolar bonds recrystallize. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361514
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  • 3
    Electronic Resource
    Electronic Resource
    Comment on "Evidence of enhanced epitaxial crystallization at low temperature by inelastic electronic scattering of mega-electron-volt heavy-ion-beam irradiation'' [J. Appl. Phys. 79, 682 (1996)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4235-4236 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results on epitaxial crystallization of Si by mega-electron-volt heavy-ion-beam irradiation recently published by Nakata [J. Appl. Phys. 79, 682 (1996)] can be understood in the framework of the "point defect diffusion model.'' It is not necessary to consider inelastic electronic scattering effects in order to explain the decrease in the normalized crystallization rate with increasing nuclear deposited energy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363373
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  • 4
    Electronic Resource
    Electronic Resource
    In situ laser reflectometry study of the amorphization of silicon carbide by MeV ion implantation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3090-3097 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ laser reflectometry and ex situ Rutherford backscattering spectrometry have been used to investigate the ion fluence and temperature dependence of the amorphization process in silicon carbide induced by 3 MeV I2+ irradiation. A comparative study in silicon showed that damage accumulation in silicon carbide proceeds more gradually in the preliminary stage of amorphization. The amorphization fluence depends weakly on temperature below 300 K but strongly above 300 K. Silicon carbide is amorphized more quickly than silicon at elevated temperatures. At very low temperatures a higher ion fluence for the amorphization of silicon carbide is required in comparison to silicon. Owing to this behavior, different mechanisms of damage growth are assumed to be present in these semiconductors. A critical energy density of 5.6×1024 eV/cm3 for the amorphization of the silicon carbide crystal up to the surface has been found at room temperature. Experimental results are compared with predictions of the models proposed by Carter as well as by Morehead and Crowder. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368508
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  • 5
    Electronic Resource
    Electronic Resource
    Phase formation due to high dose aluminum implantation into silicon carbide (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 78-85 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High doses of 350 keV aluminum (Al) ions were implanted into hexagonal silicon carbide (6H–SiC) single crystals at 500 °C. Phase formation was studied by transmission electron microscopy, secondary-ion mass spectrometry, and Auger electron spectrometry. A critical Al concentration of about 10 at. % was found below which the 6H–SiC structure remains stable. The Al atoms occupy preferentially silicon (Si) sites in the SiC lattice. The replaced Si atoms seem to be mobile under the implantation conditions and diffuse out. At higher Al concentrations the SiC matrix is decomposed and precipitates of Si and aluminum carbide (Al4C3) are formed. The Al4C3 precipitates have a perfect epitaxial orientation to the SiC matrix. The phase transformation is accompanied by atomic redistribution and strong volume swelling. The resulting changes in the atomic depth profiles can be accounted for by a simple chemical reaction model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371829
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  • 6
    Electronic Resource
    Electronic Resource
    Complete recrystallization of amorphous silicon carbide layers by ion irradiation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1999-2001 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-beam-induced recrystallization of amorphous surface layers on single-crystalline silicon carbide substrates (6H–SiC) has been investigated at temperatures of 500 and 1050 °C by cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry and channeling. It is shown, that ion irradiation substantially reduces the onset temperature of both the epitaxial layer regrowth and the random nucleation of crystalline grains. Two recrystallization regimes have been found. At 500 °C ion-beam-induced random nucleation (IBIRN) of crystalline grains strongly competes with ion-beam-induced epitaxial crystallization (IBIEC) and polycrystalline material stops the epitaxial regrowth front in an early stage. At a temperature of 1050 °C IBIEC dominates over IBIRN and a complete, but disturbed epitaxial regrowth is obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114766
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  • 7
    Electronic Resource
    Electronic Resource
    Annealing and recrystallization of amorphous silicon carbide produced by ion implantation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4769-4774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of amorphous SiC layers produced by MeV Si implantation into 6H–SiC has been investigated systematically by means of step height measurements, x-ray diffraction, and optical microscopy. Two annealing stages are found. Each of them causes a specific densification of the amorphous layer. At temperatures between 250 and 700 °C both the rapidity and the low activation energy (184 meV) of the densification suggest that defect annealing processes are responsible for densification. Partial crystallization and changes of the amorphous network structure can be excluded as a possible reason for low temperature densification. Annealing at temperatures above 700 °C is characterized by a combination of defect annealing and recrystallization. The crystallization kinetics is analyzed in terms of the Johnson–Mehl–Avrami theory. It is shown that the crystallization mode changes with increasing temperature from nucleated growth at 800 °C to epitaxial growth at 1000 °C. The recrystallization generates stress in the layer which leads to surface cracking if the layer exceeds a critical thickness. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368801
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  • 8
    Electronic Resource
    Electronic Resource
    Comment on "Amorphization and defect recombination in ion implanted silicon carbide" [J. Appl. Phys. 81, 7181 (1997)] (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3935-3936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that the simplified analysis of Rutherford backscattering(backward-slash)channeling data on damage production in SiC performed by Grimaldi et al. [J. Appl. Phys. 81, 7181 (1997)] cannot be used to calculate the atomic displacement energy. The value of 12 eV at which the authors arrive is much too small. Moreover, their conclusion of similar displacement energies in Si and SiC is essentially wrong. The general reasons for that are discussed and illustrated by an example. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367314
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  • 9
    Electronic Resource
    Electronic Resource
    Kinetics of ion-beam-induced interfacial amorphization in silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5360-5373 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article reviews modeling and experimental results of ion-beam-induced interfacial amorphization (IBIIA) in silicon. It is shown that this process differs from the well-known bulk amorphization with regard to the critical energy density approach and the evolution of the roughness of the amorphous/crystalline interface during ion irradiation. IBIIA depends on the substrate temperature, ion flux, and nuclear energy deposition at the amorphous/crystalline interface, which is discussed in detail. Within this scope, new results about the temperature and ion flux dependence of IBIIA are presented that cannot be explained by previous models. Therefore, a new model based on ballistic transport effects that allows one to understand experimental results at low temperatures is proposed. According to this concept IBIIA is controlled by three processes interacting at the amorphous/crystalline interface: an athermal ion-beam-induced defect generation, a thermally activated recombination of defects, and an athermal transport of defects towards the amorphous/crystalline interface as a result of ballistic processes. It is speculated that these defects are mainly interstitials and vacancies involved in those processes. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366458
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  • 10
    Electronic Resource
    Electronic Resource
    Low-resistivity, p-type SiC layers produced by Al implantation and ion-beam-induced crystallization (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 70-72 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-resistivity (〈0.1 Ω cm), p-type SiC layers of about 500 nm width and targeted acceptor concentrations of 1.5×1020 cm−3 and 5.0×1020 cm−3 were produced by the combination of high-dose (1.0 and 3.3×1016 cm−2), multienergy (50–450 keV) Al+ ion implantation of 6H-SiC at −130 °C, ion-beam-induced crystallization with 500 keV, 5×1015 Si+ cm−2 at 500 °C and subsequent furnace annealing at 1500 °C for 10 min. The implanted SiC layers have a nanocrystalline structure consisting of randomly oriented grains of mainly 3C-SiC. The electrical properties of the doped, nanocrystalline layers were investigated by sheet resistance and Hall measurements in dependence on temperature and compared with results from single-crystalline reference samples. In comparison with the standard doping process, the hole concentration at 50 °C is enhanced by more than one order of magnitude from 9.0×1017 cm−3 to 1.6×1019 cm−3 in the case of 1.5×1020 Al cm−3 and from 6.1×1018 cm−3 to 8.0×1019 cm−3 in the case of 5.0×1020 Al cm−3, respectively. It can be speculated that the loss of active Al acceptors by precipitation is reduced in the nanocrystalline layers and, therefore, the critical concentration for the formation of an impurity band can be achieved. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1490145
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