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  • 1
    Publication Date: 1996-05-31
    Description: Missense mutations in the 695-amino acid form of the amyloid precursor protein (APP695) cosegregate with disease phenotype in families with dominantly inherited Alzheimer's disease. These mutations convert valine at position 642 to isoleucine, phenylalanine, or glycine. Expression of these mutant proteins, but not of normal APP695, was shown to induce nucleosomal DNA fragmentation in neuronal cells. Induction of DNA fragmentation required the cytoplasmic domain of the mutants and appeared to be mediated by heterotrimeric guanosine triphosphate-binding proteins (G proteins).〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Yamatsuji, T -- Matsui, T -- Okamoto, T -- Komatsuzaki, K -- Takeda, S -- Fukumoto, H -- Iwatsubo, T -- Suzuki, N -- Asami-Odaka, A -- Ireland, S -- Kinane, T B -- Giambarella, U -- Nishimoto, I -- New York, N.Y. -- Science. 1996 May 31;272(5266):1349-52.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Cardiovascular Research Center, Massachusetts General Hospital, Department of Medicine, Harvard Medical School, Charlestown, MA 02129, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/8650548" target="_blank"〉PubMed〈/a〉
    Keywords: Alzheimer Disease/*genetics/metabolism ; Amyloid beta-Peptides/metabolism ; Amyloid beta-Protein Precursor/chemistry/genetics/*physiology ; Animals ; Apoptosis ; Base Sequence ; Culture Media, Conditioned ; DNA/*metabolism ; GTP-Binding Proteins/*physiology ; Humans ; Hybrid Cells ; Mice ; Molecular Sequence Data ; Mutagenesis, Site-Directed ; Mutation ; Neurons/cytology/*metabolism ; Nucleosomes/*metabolism ; Peptide Fragments/metabolism ; Rats ; Transfection
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8076-8078 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microscopic surface topography of thin BNx films grown on graphite by electron cyclotron resonance plasma chemical vapor deposition have been imaged with scanning tunneling microscopy in air. The scanning tunneling microscope has generated images of hexagonal BN with atomic resolution.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8130-8132 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Yttria-stabilized zirconia (YSZ) films which have high crystalline quality and no dislocation near the YSZ/Si interface, have been epitaxially grown on Si(100) in spite of the relatively large lattice mismatch between YSZ and Si. The formation of the SiO2 layer at the YSZ/Si interface during the YSZ deposition takes an important part as a buffer layer in the epitaxial growth of YSZ films on Si.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6216-6223 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A plasma discharge due to a sustaining pulse of an alternating current plasma display panel was analyzed using a two-dimensional particle-in-cell code, and basic characteristics of the plasma discharge were calculated. The characteristics of the plasma discharge due to a sustaining pulse are as follows. (i) A large amount of space charge remained after drawing the discharge current. This excess space charge did not contribute to wall charge formation or ultraviolet radiation. (ii) The electron energy distribution function was evaluated and could be well fitted by the Druyvesteyn distribution in the high-energy region. The Druyvesteyn distribution was a consequence of the cross section for electron-Ne elastic scattering. (iii) The calculated ultraviolet radiation efficiency η of the plasma discharge due to a sustaining pulse was between 5.51% and 30.7%. Examination of the sensitivity of the efficiency to the electron temperature showed that reducing the electron temperature was a key to improving the efficiency. (iv) A detailed understanding of the conditions for a stable plasma discharge, memory margin, firing voltage, and electrode voltage of the sustaining pulse were obtained from the voltage transfer curve. The voltage transfer curve could be used to optimize the discharge cell design. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4231-4239 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the alternating current plasma display panel, a widespread discharge can take place accidentally in a large number of cells in the upper or lower panel ends. The undesirable discharge is referred to as global breakdown. This is a serious problem, with consequences not only for display quality, but also for product reliability. The mechanism of the global breakdown was examined experimentally using a surface electrometer and theoretically using plasma simulation. From these examinations, the global breakdown mechanism was clarified as follows. Global breakdown was accompanied by charge separation in the horizontal direction of the panel. This charge separation was caused by electron transport downward in the panel during the address discharge. The electron transport formed a negative wall charge on the phosphor surface. When the wall voltage exceeded the insulation voltage of the protective layer, global breakdown occurred. Furthermore, it was clarified that increasing the front dielectric thickness or reducing the back dielectric thickness could suppress the electron transport during the address discharge. These optimizations of cell geometry could eliminate the global breakdown. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3039-3043 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An attenuated total reflection (ATR) instrument for the observation of angle- and frequency-scanned ATR spectra has been constructed. Light characterized by various wave vectors and dispersed into a spectrum has been detected by a charge coupled device camera after reflection from a rotating mirror and a diffraction grating. Two elliptic mirrors and a prism-sample unit have been set between the rotating mirror and the diffraction grating for the purpose of controlling the light path. The images obtained have been analyzed by a digital image processing system so that angle-scanned ATR signals are obtained for various wavelengths (500–800 nm). The time required to acquire one image has been 0.7 s in the present system. The dependence of the dielectric constant of a Ag film on wavelength is given here as an example measured by our system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2407-2409 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zirconium dioxide (ZrO2) films have been grown on Si(100), Si(111), and SiO2/Si substrates heated at the range from room temperature to 800 °C by vacuum evaporation. X-ray diffraction and reflection high-energy electron diffraction observations reveal the epitaxial growth of tetragonal ZrO2(200) films on Si(100) substrates at 800 °C. The epitaxial imperfection is caused by preferentially oriented tetragonal ZrO2(002) grains. The crystalline system of ZrO2 films depends on the substrate temperature. The crystalline perfection and the orientation of tetragonal ZrO2 films grown at 800 °C depend on the substrate orientation.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 134 (1986), S. 527-531 
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 134 (1986), S. 527-531 
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 0014-5793
    Keywords: (Human) ; Motilin ; cDNA sequence
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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