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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3327-3332 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the relaxation behavior of compressive InxGa1−xP layers grown by atomic layer molecular-beam epitaxy at Ts=420 °C with x=56%±3% and x=67%±3%. Similar (thickness and composition) InxGa1−xP layers were grown under different growth conditions in order to assess the influence of the stoichiometry of the growth front on the structural properties and the relaxation process of this material system. All InxGa1−xP layers were characterized by double-crystal x-ray diffraction, transmission electron microscopy, and Nomarski interference. Our results show that surface stoichiometry during growth does not affect the relaxation behavior of InxGa1−xP layers but strongly determines their structural characteristics related to composition modulation features which appear in all our InxGa1−xP layers. We have established an empirical relation between residual strain and thickness. This relation makes predictable the residual strain of more complicated structures which can be introduced as buffer layers in lattice-mismatched heteroepitaxial systems. © 1996 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 339-342 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the optical properties of GaAs/AlAs superlattices grown by molecular beam epitaxy (MBE) and atomic layer MBE (ALMBE) on {113}A-oriented GaAs substrates. The corrugation which appears in the samples obtained by MBE does not exhibit any periodicity. Phonon-associated replicas are only observed on the photoluminescence excitation spectra of ALMBE superlattices. It was found that the observed differences can be attributed to the growth techniques employed in the synthesis of the samples: MBE superlattices have rougher interfaces than the ALMBE ones, but a lower number of nonradiative recombination centers. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1951-1953 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deformation potentials can be determined by measuring the variation of the energy of the electronic transitions with strain. In this work, the hydrostatic and shear potentials of the band-gap electronic transition (E0) and the transitions along the 〈111〉 direction (E1) of GaAs1−xPx, x≈0.20, have been determined by electroreflectance characterization of GaAs1−xPx layers with different levels of strain.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 11134-11142 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Starting from optimal control, various series of infrared, ultrashort laser pulses with analytical shapes are designed in order to drive a preoriented molecule from its ground torsional state, which represents the coherent superposition of left and right atropisomers, towards a single enantiomer. Close analysis of the population dynamics, together with the underlying symmetry selection rules for the laser induced transitions, yields the mechanism. Namely, the molecule is driven from its ground vibrational state towards the coherent superposition of the lowest doublet of states via a doublet of excited torsional states with opposite symmetries. This pump-and-dump mechanism can be achieved by simpler series of analytical laser pulses. This decomposition of the optimal pulse into analytical subpulses allows us to design different scenarios for the selective preparation of left or right enantiomers. Exemplary this is demonstrated by quantum simulations of representative wave packets for the torsional motions of the model system, H2POSH, in the electronic ground state, based on the ab initio potential energy surface, and with ab initio dipole couplings. © 2000 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2665-2670 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using real-time in situ laser light scattering we study, in this work, the influence of growth kinetics on the initial development of the crosshatched morphology and its subsequent evolution. The crosshatched morphology is characteristic of relaxed low strained layers (cursive-epsilon〈 2%) and has been traditionally related to the plastic relaxation process driven by generation and multiplication of dislocations. However we have observed that, if the growth rate is slow enough, the onset of crosshatch formation takes place at a layer thickness in which the dislocation formation and multiplication processes have not appeared yet. This reveals that the stress field generated by the small density of misfit dislocations formed by bending of the dislocations preexisting in the substrate is strong enough to affect the evolution of the growth front morphology. Our results also show that the starting point and evolution of this characteristic morphology depend on the growth rate in such a way that when the growth rate is lower the crosshatched morphology starts to develop at a smaller thickness and shows a faster evolution rate. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 2373-2376 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The orbital free ab initio molecular dynamics method is applied to study the static and dynamic structure of liquid Al near the triple point. The method uses a new kinetic energy functional, along with a local pseudopotential constructed within the same kinetic energy functional. The results obtained for the dynamic structure factor are compared with recent experimental data. © 2001 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 6984-6988 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A molecular dynamics simulation method for computing the static and dynamic properties of a hard-core fluid with a Yukawa tail is developed. The calculated static bulk properties show good agreement with the Monte Carlo results previously reported. We have also calculated the thermodynamic properties within the mean spherical approximation by the energy, compressibility, and virial routes; the "exact'' data are most closely approximated by the energy route. The computed values of the self-diffusion constant are compared with those corresponding to a hard-sphere fluid; the results are consistent with previous findings that the cohesive part of the intermolecular potential plays a significant role in reducing diffusion.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1104-1106 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the influence of InP buffer-layer morphology in the formation of InAs nanostructures grown on InP(001) substrates by solid-source molecular-beam epitaxy. Our results demonstrate that when InP buffer layers are grown by atomic-layer molecular-beam epitaxy, InAs quantum dot-like structures are formed, whereas InP buffer layers grown by MBE produce quantum-wire-like structures. The optical properties of these corrugated structures make them potential candidates for their use in light-emitting devices at 1.55 μm. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2919-2921 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The localization of the L-like conduction states is found to change from the islands to the substrate in InAs quantum dots grown on GaAs as the island-size decreases. This is due to a size-induced modification of the strain state of the islands. The critical size should correspond to dislocation formation. As a result, small InAs islands coherently strained to GaAs exhibit optical properties markedly different from those of bulk InAs. © 2000 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2197-2199 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-plane optical anisotropies of (001)-oriented InAs/InP self-assembled quantum wires and dots structures are studied by means of photoreflectance in the spectral region of the E1 transition of bulk InAs. The energy position of the transition observed in the quantum wires depends on the light polarization; quantum dots do not exhibit, in contrast, such an optical anisotropy. This anisotropy is attributed to the splitting of the four-fold degenerate E1 transition produced by the strong triaxial behavior of the strain that appears in wires and not in dots. © 2000 American Institute of Physics.
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