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  • 1
    Electronic Resource
    Electronic Resource
    Explosive crystallization in silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3091-3099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A survey of the possible autocatalytic crystallization processes called explosive crystallization in liquid and solid states is given. The explosive liquid-phase epitaxy with laterally moving coupled interfaces of melting and crystallization in amorphous silicon layers on insulators is investigated by the use of an experimental equipment consisting of three synchronized lasers supplying the temperature pulses for ignition, spreading, and stopping of the explosive front. The velocity of this explosive crystallization front measured by use of time-resolved reflectivity of a test beam is compared with the results of model calculations. The results are in good agreement. The crystal structure was investigated by optical and transmission electron micrography and represents crystalline laminae grown preferentially in the 〈110〉 direction over a distance of about 100 μm. Areas of some millimeters in diameter can be crystallized by this method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336910
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  • 2
    Electronic Resource
    Electronic Resource
    Deep level transient capacitance measurements of GaSb self-assembled quantum dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5843-5849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) measurements have been made on GaAs n+p diodes containing GaSb self-assembled quantum dots and control junctions without dots. The self-assembled dots were formed by molecular beam epitaxy using the Stranski–Krastanov growth mode. The dots are located in the depletion region on the p side of the junction where they act as a potential well that may capture and emit holes. Spectra recorded for temperatures between 77 and 440 K reveal several peaks in diodes containing dots. A control sample with a GaSb wetting layer was found to contain a single broad high temperature peak that is similar to a line found in the GaSb quantum dot samples. No lines were found in the spectra of a control sample prepared without GaSb. DLTS profiling procedures indicate that one of the peaks is due to a quantum-confined energy level associated with the GaSb dots while the others are due to defects in the GaAs around the dots. The peak identified as a quantum-confined energy level shifts to higher temperatures and its intensity decreases on increasing the reverse bias. The activation energy for the quantum-confined level increases from 400 meV when measured at a low reverse bias to 550 meV for a large reverse bias. Lines with activation energies of 400, 640, and 840 meV are associated with defects in the GaAs based on the bias dependence of their peak positions and amplitudes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318391
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of ion-implantation-damage-created n-type conductivity in InP after high-temperature annealing (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3091-3098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductivity and the impurity profiles of InP implanted with dopant ions (Si,Be) or non dopant ions (B,H,N,O,P) have been investigated. Experiments have been done in substrates with and without Fe doping. Low-temperature, short-time annealing of implanted Si and Be reveals an n-type distribution of carriers which cannot be accounted for on the basis of implant activation. In order to examine the contribution without the carriers originating from the dopant ions, the behavior of electrically inactive B, H, N, O, and P, implants was investigated. Implantation of these ions into semi-insulating InP introduced n-type doping in the 1×1016 cm3 range after an anneal above 450 °C. For H, O, N, and P ions, the n-type conductivity could be eliminated by annealing at higher temperatures. However, boron anneals up to 750 °C did not eliminate the n-type conductivity. The n-type carrier profiles tracked the ion profiles. The carrier profile is influenced by the redistribution of the Fe during annealing; however, the Fe motion cannot explain the n-type conductivity. This conductivity may be due to a complex formed above 450 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354574
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  • 4
    Electronic Resource
    Electronic Resource
    Paramagnetic resonance in GaN-based light emitting diodes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2376-2378 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Significant advances in GaN-based materials and devices have prompted intense interest in the group III nitrides. In this letter, we report electroluminescence-detected magnetic resonance (ELDMR) and electrically detected magnetic resonance (EDMR) results on InGaN/AlGaN double heterostructures which have an intense blue emission. The dominant feature detected by either technique is a broad resonance (ΔB∼21 mT) at g≈2.00. Our ELDMR measurements show that this is associated with the blue emission and we ascribe this resonance signal to a deep Zn-related acceptor. A second resonance, resolved in EDMR, is tentatively identified as a deep donor trap. Based on our results we propose a model for the blue emission from these diodes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114350
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3614-3616 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) spectroscopy has been performed on a set of self-assembled InSb, GaSb, and AlSb quantum dot (QD) heterostructures grown on GaAs. Strong emission bands with peak energies near 1.15 eV and linewidths of ∼80 meV are observed at 1.6 K from 3 monolayer (ML) InSb and GaSb QDs capped with GaAs. The PL from a capped 4 ML AlSb QD sample is weaker with peak energy at 1.26 eV. The PL bands from these Sb-based QD samples shift to lower energy by 20–50 meV with decreasing excitation power density. This behavior suggests a type II band lineup. Support for this assignment, with electrons in the GaAs and holes in the (In,Ga,Al)Sb QDs, is found from the observed shift of GaSb QD emission to higher energies when the GaAs barrier layers are replaced by Al0.1Ga0.9As.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115747
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  • 6
    Electronic Resource
    Electronic Resource
    Recombination processes in InxGa1−xN light-emitting diodes studied through optically detected magnetic resonance (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3123-3125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically detected magnetic resonance (ODMR) has been observed on photoluminescence from InGaN light-emitting diodes (LEDs) under low photoexcitation conditions. The samples have the usual p-i-n structure but without etching or metallizations. Distinct ODMR features from the recombining electron and hole are found with strength that indicates significant charge separation and long lifetimes (〉100 ns). The electron and hole g tensors are determined for green and extra-blue LEDs. The recombination is assigned to electrons in the InGaN quantum well (QW) and holes either bound at Mg acceptors outside the well or localized at potential minima in the QW but spatially separated from the electrons. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122693
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  • 7
    Electronic Resource
    Electronic Resource
    Identification of VSe-impurity pairs in ZnSe:N (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1112-1114 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically detected magnetic resonance (ODMR) of heavily nitrogen-doped ZnSe at 24 GHz reveals an anisotropic spectrum which can be assigned to a deep donor comprised of a Se vacancy paired with an impurity. The newly resolved spectrum is trigonal along 〈111〉 with g(parallel)=2.0072(2) and g⊥=2.0013(2). Comparison of this g tensor with previous work leads to the assignment of the spectrum to VSe-X, where X is most probably Cu or Ag. Combining this result with previous photoluminescence and ODMR work shows that ZnSe:N has three distinct donors which include both impurities and intrinsic defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112114
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  • 8
    Electronic Resource
    Electronic Resource
    Interface control in InAs/AlSb superlattices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 598-600 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The presence of two species of both cations and anions permits the construction of InAs/AlSb heterostructures with either AlAs- or InSb-like interfaces. Using migration-enhanced epitaxial techniques, we grew InAs/AlSb superlattices with both types of interfaces. The control of interfacial composition was confirmed by x-ray diffraction and Raman spectroscopy measurements. We demonstrate that superlattices displaying multiple x-ray diffraction satellites, distinct planar vibrational modes, and strong photoluminescence can be achieved with both InSb- and AlAs-bonded interfaces using appropriate buffer layers and growth temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112955
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of optically detected magnetic resonance in GaN films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2673-2675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically detected magnetic resonance has been observed from GaN. Two magnetic resonances have been detected on the 2.2 eV-deep photoluminescence band. The first resonance is sharp [full width at half-maximum (FWHM) ∼2.2 mT] with g(parallel)=1.9515±0.0002 and g⊥=1.9485±0.0002 and is assigned to conduction electrons, in agreement with recent electron paramagnetic resonance (EPR) studies of similar samples. The second feature, which has not been seen by EPR, is much broader (FWHM∼13 mT) with g(parallel)=1.989±0.001 and g⊥=1.992±0.001. These parameters indicate a deep state. A tentative assignment is made to a deep state associated with the N vacancy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110416
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  • 10
    Electronic Resource
    Electronic Resource
    Defect analysis by dechanneling
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 15 (1986), S. 317-321 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(86)90311-3
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