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  • 1
    Electronic Resource
    Electronic Resource
    Imaging three-dimensional polarization in epitaxial polydomain ferroelectric thin films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1477-1481 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Voltage-modulated scanning force microscopy (Piezoresponse microscopy) is applied to investigate the domain structure in epitaxial PbZr0.2Ti0.8O3 ferroelectric thin films grown on (001) SrTiO3. By monitoring the vertical and lateral differential signals from the photodetector of the atomic force microscope it is possible to separate out and observe the out-of-plane and in-plane polarization vectors in the thin film individually. The relative orientation of the polarization vectors across a 90° domain wall is observed. Nucleation of new reversed 180° domains at the 90° domain wall is studied and its impact on the rotation of polarization within the a domain is analyzed as a function of reversal time. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421219
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  • 2
    Electronic Resource
    Electronic Resource
    Scaling of ferroelectric properties in thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 409-411 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fundamental issue in ferroic systems (ferromagnetic and ferroelectric) is the scaling of the order parameter (magnetization or polarization) with size. Specifically, in ferroelectric thin films, deviations in the polarization can occur due to: (i) competition between thermal vibrations and the correlation energy (which aligns the dipoles) and (ii) damage during fabrication. These deviations will have a profound impact on the performance of the next generation of high-density nonvolatile memories based on the spontaneous polarization. We have combined approaches, namely, focused ion-beam milling to define submicron capacitors and scanning force microscopy to examine the scaling of the fundamental ferroelectric response of these capacitors. We find that the capacitors exhibit ferroelectric properties for lateral dimensions down to at least 100 nm, suggesting that memories with densities in the range of 4–16 Gbits can be successfully fabricated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124391
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  • 3
    Electronic Resource
    Electronic Resource
    Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3874-3876 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scaling of the ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films was studied. Focused ion beam milling was used to fabricate submicron devices (1×1, 0.5×0.5, 0.25×0.25, 0.09×0.09, and 0.07×0.07 μm2) and scanning force microscopy was used to examine their piezoelectric response. It was found that capacitors as small as 0.09×0.09 μm2 exhibit good piezoelectric/ferroelectric properties and that submicron (0.25×0.25 μm2) capacitors show resistance to bipolar fatigue with up to at least 109 cycles. The results were compared with similar capacitor structures milled in the Pb1.0(Nb0.04Zr0.28Ti0.68)O3 system where structures as small as 0.07×0.07 μm2 were analyzed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125485
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3)O3(90%)–PbTiO3(10%) relaxor thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 4183-4185 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of heteroepitaxy-induced constraint on the structure and piezoelectric properties of the relaxor ferroelectric lead magnesium niobate–lead titanate (PMN–PT) were investigated. Relaxor PMN–PT epitaxial thin films with oxide electrodes were grown by pulsed-laser deposition on (100) LaAlO3 substrates. We observe a systematic decrease in the phase transition temperature (temperature at which a maximum in dielectric response occurs), from around 250 to around 60 °C as the relaxor thickness is increased from 100 to 400 nm. This is accompanied by an increase in the relative dielectric constant (εr), measured at room temperature and 10 kHz, from 300 to 2000. The piezoelectric coefficient d33 measured using a scanned probe microscope, increase by almost an order of magnitude with increasing film thickness. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125576
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  • 5
    Electronic Resource
    Electronic Resource
    Role of substrate on the dielectric and piezoelectric behavior of epitaxial lead magnesium niobate-lead titanate relaxor thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 438-440 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of various substrates on the electrical and electromechanical properties of 100-nm-thick epitaxial 0.9[Pb(Mg1/3Nb2/3)O3]–0.1[PbTiO3](0.9PMN–0.1PT) thin films is investigated. (001) 0.9PMN–0.1PT films are grown on (001)LaAlO3(LAO), (La, Sr)(Al, Ta)O3(LSAT), SrTiO3(STO), and MgO substrates with 40-nm-thick top and bottom La0.5Sr0.5CoO3 electrodes by pulsed laser deposition. X-ray diffraction results indicate that the films on LAO, LSAT, and STO are stressed biaxially in compression in the film-substrate interface whereas the films on MgO are stressed in tension. A decrease in the temperature of dielectric maximum (Tm) together with an increase in the dielectric constant and the longitudinal piezomodulus is observed with decreasing in-plane epitaxial stresses for LAO, LSAT, and STO substrates. The films on MgO substrates have the highest dielectric constant and piezomodulus with Tm below room temperature. The variation in Tm may be attributed to the shift in the transformation temperature from the paraelectric state to the relaxor state due to internal stresses in the film-substrate interface. Electrical and electromechanical properties should depend strongly on internal stresses in the vicinity of the phase transformation, which is reflected in our experimental observations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127002
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  • 6
    Electronic Resource
    Electronic Resource
    Role of 90° domains in lead zirconate titanate thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 292-294 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report observations of the ferroelectric domain structure in epitaxial lead zirconate titanate (PbZr0.2Ti0.8O3) ferroelectric thin films using piezoresponse microscopy. By manipulating the film thickness, a uniform two-dimensional grid of 90° domains (a domains, i.e., c axis in the plane of the film) has been induced. Our studies show that the out of plane polarization direction in the film is preferentially oriented. 90° domains have been observed as regions of low piezoresponse, as compared to the fully c axis oriented regions. We have studied the influence of these 90° domains and the domain walls on the nucleation of polarization reversal. We observe that the nucleation occurs preferentially at 90° domain interfaces. Polarization reversal is seen to occur through the nucleation and subsequent growth of "semicircular/elliptical" reverse domains, which eventually consume the entire region as a function of reversal time. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126954
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  • 7
    Electronic Resource
    Electronic Resource
    Oxide nanostructures through self-assembly (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1442-1444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A prominent theme in inorganic materials research is the creation of uniformly flat thin films and heterostructures over large wafers, which can subsequently be lithographically processed into functional devices. This letter proposes an approach that will lead to thin film topographies that are directly counter to the above-mentioned philosophy. Recent years have witnessed considerable research activity in the area of self-assembly of materials, stimulated by observations of self-organized behavior in biological systems. We have fabricated uniform arrays of nonplanar surface features by a spontaneous assembly process involving the oxidation of simple metals, especially under constrained conditions on a variety of substrates, including glass and Si. In this letter we demonstrate the pervasiveness of this process through examples involving the oxidation of Pd, Cu, Fe, and In. The feature sizes can be controlled through the grain size and thickness of the starting metal thin film. Finally, we demonstrate how such submicron scale arrays can serve as templates for the design and development of self-assembled, nanoelectronic devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352666
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  • 8
    Electronic Resource
    Electronic Resource
    Domain nucleation and relaxation kinetics in ferroelectric thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3275-3277 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time-dependent relaxation of the remanent polarization in epitaxial lead zirconate titanate (PbZr0.2Ti0.8O3) ferroelectric thin films, containing a uniform two-dimensional grid of 90° domains (c axis in the plane of the film), is examined using piezoresponse microscopy. The 90° domain walls preferentially nucleate the 180° reverse domains during relaxation, with a significant directional anisotropy. Relaxation occurs through the nucleation and growth of reverse domains, which subsequently coalesce and consume the entire region as a function of time. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322051
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  • 9
    Electronic Resource
    Electronic Resource
    Control of domain structure of epitaxial PbZr0.2Ti0.8O3 thin films grown on vicinal (001) SrTiO3 substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2805-2807 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the polydomain formation in 100–200-nm-thick PbZr0.2Ti0.8O3 epitaxial thin films on vicinally cut (100) oriented SrTiO3 substrates. Our results show that there is a preferential location of the nucleation of the a domains along the step edges of the underlying substrate. By piezo-response microscopy, we show that all a domains have their polarization aligned along the same direction. This result is in contrast to flat substrates where fourfold symmetry of a domains is observed. We observe that the critical thickness for a domain formation is much lower than that for PbZr0.2Ti0.8O3 films grown on flat substrates. We have developed a model based on minimization of elastic energy to describe the effect of localized stresses at step edges on the formation of a domains in the ferroelectric layer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402645
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  • 10
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    Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3)O3(90%)–PbTiO3(10%) relaxor thin films (1999)
    American Institute of Physics
    Details
    Publication Date: 1999-12-27
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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