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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 3080-3084 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Structure of liquid and gaseous CCl4 at elevated temperatures from 195 °C to the subcritical point 275 °C (Tc=285.15 °C) along the liquid–vapor coexistence curve have been studied by means of pulsed neutron diffraction. Structure factor in a wide range of momentum transfer Q from 0.03 to 20 Å−1, covering from the small angle scattering region to atomic-scale structure region, has been obtained. Long-range density fluctuation and atomic scale structure have been analyzed: (1) molecular orientational correlation still exists in liquidCCl4 at 275 °C while it disappears in its saturated vapor; (2) correlation lengths of density fluctuation are 10–13 Å for the liquid at 275 °C and 13–17 Å for its saturated vapor; and (3) molecular-density fluctuation (〈Nm2〉−〈Nm〉2)/〈Nm〉 is estimated to be 2.4 for the liquid at 275 °C and 9.3 for its saturated vapor. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1057-1064 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase-locked array lasers with large optical waveguide structures are demonstrated. The refractive index guides of each laser are evanescently coupled with and without offset-coupling structure. An evanescently coupled three-element laser array without offset coupling regions emits up to 200 mW and an offset-coupled laser array with a 4/5 element emits up to 150 mW under pulsed operation. Both laser arrays emit with all elements in-phase locked and produce a single narrow far-field lobe. The full widths at half maximum of the three-element and 4/5-element laser arrays are 5° and 2.5°, respectively. In phase measurements of the lobe of the 4/5-element laser array, we find that the root-mean-square aberration is less than 0.11λ under pulsed operation. This phase aberration is constant with varying power from 75 to 150 mW.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5536-5541 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective growth and optical properties of GaAs and AlXGa1−X As (X(approximately-equal-to)0.3) layers on V-grooved Si substrates by low-pressure metalorganic vapor-phase epitaxy are studied. In the microscopic Auger electron spectroscopy measurement, the As and Ga atoms were not observed on the {111} Si sidewalls of the V-grooved Si substrates. This result clarifies that the GaAs and AlXGa1−X As layers grew only on the {100} planes. The cross-sectional shapes of the selectively grown layer depended on the crystal directions due to the different chemical reactions on the different planes. Spectra of the microscopic photoluminescence and Raman scattering measurements from selectively grown layers showed the significant positional dependence. These spectral changes are interpreted as the impurity and/or the strain distributions in the selectively grown layers.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2090-2092 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lateral variation of the emission energy of GaAs masklessly grown on V-grooved Si is imaged with cathodoluminescence wavelength imaging. This newly developed unique experimental approach allows, for the first time, to directly visualize and quantify the extreme homogeneity of this novel growth mode and the lateral variation of Si impurity incorporation in such semiconductor microstructures. It represents an essential characterization tool for micropatterned optoelectronic monolithic integrated circuits.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 429-433 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mechanical alloying process for a mixture of elemental Fe and Cr powders with the Cr compositions 20–70 at. % was investigated through the measurements of x-ray diffraction, magnetization, and 57Fe Mössbauer spectrum. We show that magnetic studies provide more detailed information about the alloying process occurring during ball milling than the conventional diffraction techniques in this particular system. A final product after ball milling was identified as a high-temperature phase of the α solid solution, regardless of compositions studied. Powders subjected to milling in Ar gas atmosphere for 200 h were further ball milled in N2 atmosphere. The presence of N2 gas has caused a partial amorphization. The amorphous phase thus produced is found to be paramagnetic at room temperature.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 22-27 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique is proposed and experimentally demonstrated to achieve a quasiphase matching (QPM) condition for second-harmonic generation (SHG) in a nonlinear optical waveguide with a periodically poled LiNbO3 waveguide. The fundamental wave satisfying the QPM conditions is automatically generated when the laser diode (LD) and the optical waveguide are optically connected. Using the proton-exchanged LiNbO3 waveguide with a periodically poled grating, which was fabricated by Ti diffusion and the InP/InGaAsP LD with antireflection-coated facets, it was confirmed that the LD oscillated at the wavelength satisfying the QPM condition, and SHG was observed simultaneously. Using a Ti:sapphire laser, it was also confirmed that the SHG was realized at the third order of QPM condition, as was expected.
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 8413-8419 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Structure factors S(Q) of deuterated polyethylene (PE) in the solid and liquid states have been measured at 20, 130, and 170 °C in a wide range of Q from 0.55 to 25 A−1 by means of pulsed neutron total scattering technique. Very local intrachain structure of the PE melt, such as C–D and C–C bond lengths and (angle)CCC, (angle)DCD, and (angle)CCD bond angles, is determined from a high Q part of S(Q), and is compared with that of solid PE. Interchain structure of the melt is also discussed, assuming that the PE chains are built of small segments of five –CD2 – units like pearl necklaces and furthermore, that orientations between the segments are completely uncorrelated and chain connectivity is entirely ignored. The experimental S(Q) is reproduced reasonably well by this simple model with an effective diameter σ of the segments of 4.34 A and a packing fraction η of the segments of 0.28, which are consistent with the experimental number density of the PE melt. The different size of the segments like four or six –CD2 – units, however, gives poor results with the values of σ and η being inconsistent with the experimental number density.
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 5486-5490 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Structure factor Sm(Q) of liquid phosphorous tribromide (PBr3) has been measured at room temperature by means of pulsed neutron total scattering technique. Characteristic features of the experimental Sm(Q) are analyzed in terms of preferred orientations introduced between the nearest neighbors as well as a packing of effectively uncorrelated molecules. The preferred orientation estimated in this analysis is such that a top (or a P atom) of pyramidal shape of each PBr3 molecule points in nearly the same direction.
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 3495-3502 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The structure factor Sm(Q) of liquid benzene and naphthalene have been measured by means of pulsed neutron total scattering. Both intramolecular and intermolecular structures are discussed. The intermolecular structures are analyzed by taking account of orientational correlations introduced between the nearest neighbors and a packing of uncorrelated molecules. The experimental Sm(Q) and the radial distribution function of liquid benzene are reproduced reasonably well by introducing a perpendicular orientation just between the nearest neighbors. The analysis of liquid naphthalene suggests an orientation somewhat similar to that in liquid benzene.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 998-1000 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs growth properties and first successful maskless selective growth on the etched groove Si substrates are reported. No crystal growth occurs on the {111} Si sidewalls of the V grooves, and the GaAs layers grow only on the {100} planes. The cross-sectional shapes of the selective grown layer depend on the direction of the V grooves. The selectivity also remains even in Al0.3Ga0.7As-grown layers. The selective growth mechanisms are discussed.
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