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  • 1
    Electronic Resource
    Electronic Resource
    Modification of metal/GaN contacts with GaAs interlayers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6539-6541 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated feasibility of GaAs interlayers for the metal/GaN interface with synchrotron-radiation photoelectron spectroscopy. We have found that the use of piranha/HCl solutions is effective as a surface cleaning technique for GaN. We have confirmed that (111) GaAs grows epitaxially on a (0001) GaN substrate. Pd/GaAs/GaN sandwich structures have been successfully fabricated with molecular beam epitaxy. We have confirmed the GaAs interlayer modifies the band diagram at the metal/GaN interface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370158
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  • 2
    Electronic Resource
    Electronic Resource
    Annealing dynamics of arsenic-rich GaAs formed by ion implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1470-1475 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the annealing temperature dependence of structural and electrical properties in heavily arsenic implanted GaAs which has a similar amount of excess arsenic to low temperature GaAs (LT-GaAs). The fundamental properties of this material are quite similar to those of LT-GaAs. High resolution x-ray diffraction measurements have revealed that it has an increased lattice constant, which is reduced to the value of bulk GaAs by annealing between 300 and 400 °C. Electrical conduction in this material is dominated by hopping between deep states, which is also reduced by annealing above 350 °C. In samples annealed at temperatures ranging from 600 to 850 °C, the dominant electron trap is EL2; it has been confirmed by resistivity measurements with n-i-n structures that the Fermi level is pinned by EL2. In samples annealed below 500 °C, the dominant electron trap is not EL2 but the U-band, although electron paramagnetic resonance measurements show the existence of a large concentration of the ionized arsenic antisite defect (AsGa+). This supports the notion that the U-band is formed by AsGa defects with slightly modified carrier emission properties compared with EL2. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360235
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of low-temperature AlxGa1−xAs lattice properties using high resolution x-ray diffraction (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4452-4454 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high resolution x-ray diffraction techniques, we have studied the lattice parameter behavior of low-temperature (LT) AlxGa1−xAs as a function of annealing temperature and aluminum content. Similar to LT GaAs, the as-grown LT AlxGa1−xAs layers exhibit a dilated lattice constant which, upon annealing, contracts to that of "normal'' material. The onset of this contraction in LT Al0.3Ga0.7As, however, is found to occur at an annealing temperature nearly 100 °C higher than that required for LT GaAs. In addition, the relative lattice expansion in the as-grown LT layer is found to be a decreasing function of Al content, ranging from 0.099% for LT GaAs to 0.059% for LT Al0.3Ga0.7As. This is attributed to lower than expected As incorporation in the LT AlxGa1−xAs during growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359473
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  • 4
    Electronic Resource
    Electronic Resource
    Mechanism for low temperature activation of Mg-doped GaN with Ni catalysts (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6500-6504 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation mechanism of Mg-doped GaN with Ni catalysts has been investigated by thermal desorption spectroscopy. It has been revealed that Ni deposited on Mg-doped GaN enhances the hydrogen recombination reaction at temperatures below 200 °C with the activation energy of 1.3 eV. The hydrogen desorbed at this temperature can be attributed to a part of the passivating hydrogen in GaN with a weak binding energy. The enhancement of the hydrogen recombination reaction on the GaN surface is essential to decreasing hydrogen concentration efficiently at low temperatures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1417999
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  • 5
    Electronic Resource
    Electronic Resource
    Transient current study of low-temperature grown GaAs using an n-i-n structure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2834-2836 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of molecular beam epitaxy (MBE) grown low-temperature GaAs (LT-GaAs) by current transient spectroscopy (CTS) has been investigated. At least three deep traps have been observed in LT-GaAs grown at 250 °C and annealed at 600 °C. The deepest level is dominant and has an activation energy of 0.82 eV, which is the same as that of the midgap donor, EL2. This is consistent with the activation energy of resistivity of this sample (0.77 eV), which is close to that for bulk nondoped semi-insulating wafers. These results indicate that the Fermi level of annealed LT-GaAs grown at 250 °C is pinned by the deep level at the midgap that is generally ascribed to AsGa antisite defects. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113445
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  • 6
    Electronic Resource
    Electronic Resource
    Conduction mechanism in arsenic implanted GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2116-2118 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the electrical properties of heavily arsenic implanted GaAs, which has structural properties similar to low temperature GaAs. The electrical conduction in the lateral direction is dominated by hopping in a defect band and the resistivity after a 600 °C anneal is on the order of 103 Ω cm. However, the resistivity measured on an n-i-n structure in the direction perpendicular to the surface is on the order of 109 Ω cm. This huge difference in resistivity can be explained by the lack of an electrical contact to the defect band in the n-i-n structure. The activation energy of the resistivity in the n-i-n structure is 0.74 eV. This value is close to that for bulk undoped semi-insulating wafers, in which the Fermi level is pinned at the midgap donor, EL2. A current transient spectroscopy study of this material reveals an electron trap with an activation energy of 0.82 eV, identical to the EL2. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113921
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical characterization of low-temperature Al0.3Ga0.7As using n-i-n structures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 699-701 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Through temperature-dependent conductivity measurements, we show evidence of a deep trap level in low-temperature (LT) Al0.3Ga0.7As layers with an activation energy of ∼0.96 eV. This energy is near that of EL2-like defects found previously in "normal'' epitaxial Al0.3Ga0.7As. It is also considerably larger than the 0.70 eV value typically associated with defects in LT GaAs, which may explain the observed large resistivity ((approximately-greater-than)1011 Ω cm) in LT Al0.3Ga0.7As. Current transient spectroscopy (CTS) of these samples yields a deep level activation energy of 1.01 eV, in close agreement with the value obtained from conductivity measurements. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116596
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of carrier-trapping phenomena in ultrathin chemical oxides using x-ray photoelectron spectroscopy time-dependent measurements (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2011-2013 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a technique to characterize carrier-trapping phenomena in SiO2 by measuring the Si 2p core-level energy of Si substrates covered with thin SiO2 layers as a function of x-ray irradiation time. It is found that the Si 2p peak energy, which corresponds to the band bending at the SiO2/Si interface, changes as the x-ray irradiation time increases. We attribute this to carrier-trapping phenomena in SiO2. By using this technique, it is found that the carrier-trapping phenomena differ remarkably among several chemical oxides. We also discuss the atomic structure of the traps that cause the trapping phenomena. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123730
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  • 9
    Electronic Resource
    Electronic Resource
    Low-temperature activation of Mg-doped GaN using Ni films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2899-2901 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation of metalorganic chemical vapor deposition-grown Mg-doped GaN by N2 annealing with a thin Ni film has been investigated. p-type conduction in GaN has been obtained at an annealing temperature as low as 200 °C using the proposed technique. A hole concentration of 2×1017 cm−3 has been achieved by the annealing at 400 °C. Secondary ion mass spectroscopy measurements have revealed that hydrogen is effectively removed from the Mg-doped GaN layer. These results suggest that the Ni film significantly enhances hydrogen desorption from the GaN film, which results in the activation of Mg-doped GaN at quite low temperatures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371537
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  • 10
    Electronic Resource
    Electronic Resource
    Characterizing carrier-trapping phenomena in ultrathin SiO2 films by using the x-ray photoelectron spectroscopy time-dependent measurements (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4175-4177 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized the carrier-trapping phenomena in ultrathin (1.3–3.5 nm) SiO2 films (practical used thermal oxide and oxynitride) by using x-ray photoelectron spectroscopy time-dependent measurements. It was found that the net amount of hole traps in the ultrathin oxynitride is smaller than that in the ultrathin thermal oxide. This result is consistent with the previously reported results for the thick thermal oxide and oxynitride using conventional electrical measurements. We consider what is responsible for the contribution to the formation of hole traps. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334657
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