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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of polycyclic aromatic compounds on surfaces using ion-beam-induced desorption and multiphoton resonance ionization (1991)
    s.l. : American Chemical Society
    Analytical chemistry 63 (1991), S. 225-232 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00003a008
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  • 2
    Electronic Resource
    Electronic Resource
    Detection of biomolecules on surfaces using ion-beam-induced desorption and multiphoton resonance ionization (1991)
    s.l. : American Chemical Society
    Analytical chemistry 63 (1991), S. 1947-1953 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00018a010
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  • 3
    Electronic Resource
    Electronic Resource
    Electronic and nuclear effects in ion-induced desorption from NaCl{100} (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 3298-3305 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Multiphoton resonance ionization (MPRI) spectroscopy has been employed to investigate the ejection mechanisms of neutral and ionic particles from an ion-bombarded NaCl{100} single crystal. The results are used to reveal the similarities and the differences between ion bombardment and electron irradiation of alkali halides. The mass spectra of neutral species and positive and negative ions have been measured. The yield of Na+ ions is found to be two orders of magnitude higher than in measurements with electron bombardment. It is suggested that the secondary ions are created by direct emission from the collision cascade. The ejection of neutral Na atoms is observed to be very sensitive to the temperature of the target, the angle of incidence, and the state of the surface as determined by the time-of-flight (TOF) measurements. In particular, it is found that most of the neutral Na atoms are emitted with thermal energies, which indicates that desorption via electronic transitions dominates over ejections from collision cascades. The relative yield of the collisional component to the thermal component is found to vary significantly as the surface structure is modified. This investigation emphasizes the importance of measurements with low incident-ion dose which allows one to decouple the single ion/surface interaction from the accumulative effect of ion-induced surface modifications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461975
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal stability and performance reliability of Pt/Ti/WSi/Ni ohmic contacts to n-SiC for high temperature and pulsed power device applications (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3864-3868 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pt/Ti/WSi/Ni ohmic contacts to n-SiC, initially annealed at 950 and 1000 °C for 30 s, were evaluated for thermal stability via pulsed/cyclic thermal fatigue and aging experiments at 650 °C. Modifications of material properties in response to cyclic thermal fatigue and aging tests were quantitatively assessed via current–voltage measurements, field emission scanning microscopy, atomic force microscopy, and Rutherford backscattering spectrometry. Negligible changes in the electrical properties, microstructure, and surface morphology/roughness were observed for both annealed ohmic contacts in response to 100 cycles of acute cyclic thermal fatigue. Aging of the 950 °C annealed contact for 75 h at 650 °C resulted in electrical failure and chemical interdiffusion/reaction between the contact and SiC substrate. The 1000 °C annealed contact retained ohmicity after 100 h of aging and was found to be chemically and microstructurally stable. These findings indicate that the 1000 °C annealed Pt/Ti/WSi/Ni ohmic contact to n-SiC is thermally stable and merits strong potential for utilization in high temperature and pulsed power devices. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450024
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  • 5
    Electronic Resource
    Electronic Resource
    Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2652-2657 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ni/WSi/Ti/Pt Ohmic contacts to n-SiC were investigated as a function of annealing temperatures up to 1000 °C. Annealing at temperatures between 950 and 1000 °C yielded excellent Ohmic behavior. At these temperatures the contact–SiC interface was smooth, defect free, and characterized by a narrow Ni2Si reaction region. The annealed contacts possessed atomically smooth surface morphologies and exhibited minimal contact expansion. The residual carbon, resultant from SiC decompositon and reaction with Ni to form Ni2Si, was constrained by reaction with the WSi and Ti layers forming carbide phases of W and Ti spatially distant from the metal semiconductor interface. Our results demonstrate that the Ni/WSi/Ti/Pt composite Ohmic contact maintains the desirable electrical properties associated with Ni contacts and possesses excellent interfacial, compositional, and surface properties which are required for reliable high power and high temperature device operation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287776
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  • 6
    Electronic Resource
    Electronic Resource
    Fabrication and characterization of pulse laser deposited Ni2Si Ohmic contacts on n-SiC for high power and high temperature device applications (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4413-4416 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ni2Si Ohmic contacts were fabricated via pulsed laser deposition on n-SiC. The contacts electrical, structural, compositional, and surface morphological properties were investigated as a function of annealing temperatures ranging from 700 to 950 °C. The as-deposited and 700 °C annealed contacts were non-Ohmic. Annealing at 950 °C yielded excellent Ohmic behavior, an abrupt void free interface, and a smooth surface morphology. No residual carbon was present within the contact metallization or at the contact-SiC interface and the contact showed no appreciable thickness increase as a result of the annealing process. Our results demonstrate that aside from maintaining the desirable electrical integrity associated with Ni and Ni/Si Ohmic contacts, the Ni2Si Ohmic contacts possessed improved interfacial, compositional, microstructural, and surface properties which are required for reliable high temperature and high power device operation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357777
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  • 7
    Electronic Resource
    Electronic Resource
    La doped Ba1−xSrxTiO3 thin films for tunable device applications (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6336-6340 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pure and La doped Ba0.6Sr0.4TiO3 thin (BST) films were fabricated via the metalorganic solution deposition technique using carboxylate-alkoxide precursors on Pt–Si substrates. The La doping concentration, from 0 to 10 mol %, was found to have a strong influence on the 750 °C postdeposition annealed films material properties. All films possessed a nontextured polycrystalline microstructure with no evidence of secondary phase formation. The pure and 1 mol % La doped films exhibited a uniform microstructure suggestive of a fully developed film at this annealing temperature. Improved dielectric and insulating properties were achieved for the 1 mol % La doped BST thin films with respect to that of undoped BST films. The 1 mol % La doped BST film exhibited a lower dielectric constant, (283 vs 450) and enhanced resistivity (31.4×1013 Ω cm vs 0.04×1013 Ω cm) with respect to that of undoped BST films. The loss tangent and tunability (at 100 kHz) of the 1 mol % La doped BST films were 0.019% and 21% (at E=300 kV/cm), respectively. Films doped at concentrations between 5 and 10 mol % possessed under developed microstructures suggesting that higher annealing temperatures and/or longer annealing times are required. The single phase structure of the 5–10 mol % La doped BST films, combined with the beneficial influence of the 1 mol % La doping on the BST films dielectric and insulating properties, suggest potential for further enhancement of the films material properties after optimization of the thermal treatments for the 5–10 mol % La doped BST thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1366656
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  • 8
    Electronic Resource
    Electronic Resource
    Alkoxy sol-gel derived Y3−xAl5O12:Tbx thin films as efficient cathodoluminescent phosphors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3800-3802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film Y3−xAl5O12:Tbx3+ (YAG:Tb) phosphor derived from a sol-gel chemistry is analyzed by x-ray diffraction, scanning electron microscopy, photoluminescence (PL) and cathodoluminescence (CL). The metal alkoxides organic precursors were chosen as the starting materials to form the sol-gel. This liquid sol-gel was spin coated on sapphire and silicon substrates to form the uniform thin films, then crystallized by annealing. The PL intensity of the crystallized film at 545 nm green emission was 15 times higher than that of the as-coated noncrystalline film. CL measurements show that luminance and efficiency are comparable to the films deposited by other techniques. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378313
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  • 9
    Electronic Resource
    Electronic Resource
    Multiple Receptor Contributions to Ovine Fetal Cardiovascular Responses to Vasopressin (1993)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 689 (1993), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1993.tb55579.x
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial TaC Films for the Selective Area Growth of SiC (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 183-186 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: At sufficiently high temperatures PLD deposited TaC films can be grown epitaxially on 4H-SiC (0001) substrates; at lower temperatures the films recrystallize and ball up forming a large number of pinholes. The growth temperature for epitaxy was found to be 1000ºC, and it was facilitated by the epitaxial growth of a thin (2 nm) transition layer of hexagonal Ta2C. High temperature annealing produced changes in the surface morphology, caused grain growth, and created pin holes through a recrystallization process in the films deposited at the lower temperatures, while the films deposited at the higher temperatures remained virtually unchanged. Using TEM it is shown that the (0001) basal planes of the hexagonal 4H-SiC and Ta2C phases are aligned, and they were also parallel to the (111) plane in the cubic TaC with the [101] cubic direction being parallel to the hexagonal [2110] hexagonal direction. The Ta2C interlayer most likely is formed because its lattice parameter in the basel plane (3.103 Ǻ) is intermediate between that of the 4H-SiC (3.08 Ǻ) and the TaC (3.150 Ǻ). Given that Al.5Ga.5N is lattice matched to TaC, it could be an excellent substrate for the growth of GaN/AlGaN heterostructures
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.183.pdf
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