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  • 1
    Electronic Resource
    Electronic Resource
    Defects and ion redistribution in implant-isolated GaAs-based device structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6580-6586 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implant isolation of thick GaAs based epitaxial structures using either multiple energy keV ions or a single MeV ion implantation is becoming more popular for devices such as heterojunction bipolar transistors or quantum well lasers. We report examples of both types of isolation schemes, using keV F+ and H+ ions, or MeV O+ ions. Post-implant annealing at temperatures in the range 500–600 °C is needed to maximize the resistivity of the implanted material, but this causes redistribution of both F and H (but not O) and accumulation of hydrogen at strained or ion-damaged interfaces. The amount of hydrogen motion is sufficient to cause concerns about dopant passivation occurring in the initially masked, active regions of the devices. The resistance of the ion-implanted regions is stable for periods of ≥50 days at 200 °C, and is controlled by deep level point defects which pin the Fermi level near mid gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355096
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  • 2
    Electronic Resource
    Electronic Resource
    Single-energy, MeV implant isolation of multilayer III-V device structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1010-1013 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-energy, implant isolation scheme for thick (≥1.5 μm) III-V semiconductor device structures such as heterojunction bipolar transistors (HBTs) is described. A 5-MeV O+ implant at doses around 1015 cm−2 produces an almost uniform damage profile over ∼2 μm, sufficient to isolate structures containing highly doped (p=7×1019 cm−3) individual layers. The heavily damaged region associated with the end of the O+ ions range is placed in the underlying semi-insulating substrate. Resistivities above 108 Ω/(D'Alembertian) are obtained in GaAs/AlGaAs HBTs with such an implant, following annealing at ∼550 °C. High-quality, 2×5 μm2 HBTs with gains of 25 for base doping of 7×1019 cm−3 have been fabricated using this isolation scheme. A considerable simplification is achieved over the use of conventional keV implants, where up to ten separate ion energies are required to isolate an HBT structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350436
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  • 3
    Electronic Resource
    Electronic Resource
    Use of MeV O+ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4949-4954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The implant isolation characteristics of highly doped n- and p-type GaAs epitaxial layers implanted with 5 MeV O+ ions are reported. High (∼108 Ω/(D'Alembertian)) sheet resistances are obtained in such layers following annealing at 550–600 °C for ion doses around 1015 cm−2. The residual conductivity is still due to hopping processes with small activation (50–70 meV) energies. The use of a single MeV O+ implant considerably simplifies the isolation of GaAs/AlGaAs heterojunction bipolar transistor (HBT) structures relative to the usual multiple-implant keV energy scheme. Small geometry (2×5 μm2) HBTs with gains of 25 for highly-doped (p=7×1019 cm−3) base layer structures have been fabricated using MeV implant isolation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350643
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  • 4
    Electronic Resource
    Electronic Resource
    The effect of temperature and doping on the segregation of In during solid-phase-epitaxial crystallization of Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3313-3318 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The segregation of In during solid-phase-epitaxial crystallization of amorphous Si layers is examined as a function of annealing temperature and the presence of p- and n-type dopants. The fraction of In segregated to the sample surface decreases with increasing temperature from 38% at 450 °C to 18% at 600 °C. This is shown to be consistent with changes in the crystallization velocity and In diffusivity in amorphous Si. The addition of p- and n-type dopants is shown to increase the crystallization velocity and further decrease the segregation of In. The reduced segregation is shown to be inconsistent with the dopant-induced velocity changes alone, and it is speculated that dopant-induced solubility changes are responsible for this effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352980
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical evaluation of Al–p+-GexSi1−x ohmic contacts (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3110-3114 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of Al–p+-GexSi1−x contacts were studied using transmission line measurements. For this study the GeSi alloy layers were selectively formed with 30 or 90 keV Ge implantation into Si, a technique which offers a simple, self-aligned process for the fabrication of such layers. Measurements of the current–voltage characteristics showed that the metal–alloy contacts were ohmic over the voltage range examined. The specific contact resistivity was found to be a function of Ge concentration, decreasing with increasing Ge concentration for concentrations below a critical value and increasing with increasing Ge concentration above this value. The initial decrease in specific contact resistivity is attributed to the effect of Ge on the contact barrier height and width, an effect which is caused by the reduction in the band gap of the alloy. The subsequent increase in specific contact resistivity at higher Ge concentrations is believed to be due to the presence of a high concentration of dislocations in the alloy layer. The thermal stability of contacts is also reported. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363121
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  • 6
    Electronic Resource
    Electronic Resource
    Solid phase epitaxial growth of amorphized InP (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 487-489 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid phase epitaxial growth of amorphized InP has been investigated at temperatures of 145–335 °C. The epitaxial recrystallization kinetics have been determined for both thermal and ion beam annealing using ion channeling and time-resolved reflectivity measurements and post-anneal, residual disorder has been characterized with transmission electron microscopy. The twin density and size distribution were significantly smaller for ion beam annealed samples, thus clearly demonstrating that ion beam annealing effectively suppresses the onset of highly defective (twinned) regrowth characteristic of thermal annealing. The substantially better crystalline quality of ion beam annealed samples contrasts with observations in GaAs where only a slight difference in post-anneal disorder was apparent for the two annealing regimes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104616
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  • 7
    Electronic Resource
    Electronic Resource
    Kinetic roughening and smoothing of the crystalline–amorphous interface during solid phase epitaxial crystallization of GeSi alloy layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2677-2679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The morphology of the crystalline–amorphous interface is studied during solid-phase epitaxial crystallization of amorphous GeSi alloy layers with depth-dependent Ge distributions. The interface is shown to undergo an initial strain-induced roughening transition when the Ge concentration exceeds 6.6 at. %. As crystallization continues in strain-relaxed material the interface is shown to further roughen or smooth in response to changes in the Ge distribution. This evolution of the interface morphology is shown to be a consequence of kinetic effects whereby the differential velocity between the leading and trailing edges of the rough interface increases in regions of increasing Ge concentration and decreases in regions of decreasing Ge concentration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117675
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  • 8
    Electronic Resource
    Electronic Resource
    Ion-beam-induced epitaxy and interfacial segregation of Au in amorphous silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 314-316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The segregation and diffusion of Au are examined during ion-beam-induced solid phase epitaxial crystallization of Au-implanted amorphous silicon layers. Epitaxy was induced at temperatures as low as 220 °C by irradiation with 1.5 MeV Ar ions. At these temperatures Au is segregated to form a narrow layer at the moving crystal/amorphous interface. The size of the segregated layer depends on the velocity of the interface compared to the Au diffusivity in amorphous Si. The growth rate for ion-beam-induced epitaxy is found to be independent of Au concentration and near-complete epitaxial crystallization of the amorphous layers can be achieved, even for Au concentrations ∼2 at. %.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98454
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  • 9
    Electronic Resource
    Electronic Resource
    Ion beam induced epitaxial crystallization of NiSi2 (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2117-2119 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion beam induced epitaxial crystallization of amorphous NiSi2 is reported. Epitaxial NiSi2 layers on (111) Si substrates were implanted at ∼−196 °C with low-energy Si ions to form an amorphous surface layer. The recrystallization of amorphous NiSi2 was induced at 13–58 °C by irradiating with high-energy Si or Ne ions. Recrystallization proceeded in a layer-by-layer manner from the original amorphous/crystalline interface with an activation energy of 0.26±0.07 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102989
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  • 10
    Electronic Resource
    Electronic Resource
    Thermally induced epitaxial recrystallization of NiSi2 and CoSi2 (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1992-1994 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved reflectivity and Rutherford backscattering spectrometry combined with channeling have been used to measure the epitaxial recrystallization kinetics of amorphous NiSi2 and CoSi2 layers. Epitaxial metal silicide layers, fabricated on (111) Si substrates by metal deposition and thermal reaction, were implanted with low-energy Si ions to form amorphous surface layers. Such layers recrystallized epitaxially from the underlying crystalline metal silicide during thermal annealing at temperatures of 60–176 °C. Post-anneal disorder consisted of dislocation networks as observed with transmission electron microscopy. Reduced recrystallization rates were apparent in samples implanted with O and Ar ions. Activation energies of 1.09±0.03 and 1.17±0.03 eV were determined for the epitaxial recrystallization of amorphous NiSi2 and CoSi2 layers, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103229
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