ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-power operation of 3 W in pulse mode, 750 mW in quasi-continuous wave and 650 mW in continuous wave per uncoated facet from 100-μm aperture has been demonstrated for 1-mm-long cavity InGaAsP/GaAs 808-nm laser diodes prepared by low-pressure metalorganic chemical vapor deposition. Threshold current density of 300 A/cm2, differential efficiency of 1.1 W/A, T0=155 °C, transverse beam divergence of 27°, and less than 2-nm linewidth at 808 nm have been measured. No degradation has been observed after 1000 h of operation in a quasi-continuous wave regime.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112206
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