Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 1749-1751
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Patterned etching of GaN films was achieved with laser-induced thermal decomposition. High-energy laser pulses are used to locally heat the film above 900 °C, causing rapid nitrogen effusion. Excess gallium is then removed by conventional etching. At exposures of 0.4 J/cm2 with 355 nm light, etch rates of 50–70 nm per pulse were obtained. Illumination with an interference grating was used to produce trenches as narrow as 100 nm. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117473
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