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  • 1
    Electronic Resource
    Electronic Resource
    A new 1/f noise model for metal-oxide-semiconductor field-effect transistors in saturation and deep saturation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5990-5998 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new 1/f noise model for metal-oxide-semiconductor field-effect transistors (MOSFETs) in saturation and deep saturation based on the Hooge's mobility fluctuation (MF) noise expression is presented. The new model uses detailed one-dimensional expressions of carrier number per unit length n(x) and channel potential V(x) varying with channel position x to calculate the gate referred noise spectral density SVG(f) in both saturation and deep saturation. The analytic variation of both n(x) and V(x) with x has been corroborated with a two-dimensional device simulator. In addition, new formulas for 1/f noise in MOSFETs based on the number fluctuation (NF) model are also presented. The theoretical results of SVG(f) and the drain current noise spectral density SID(f) versus biasing voltages, using the MF model, are in better agreement to the experimental results than the theoretical results of SVG(f) and SID(f) based on the NF model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351909
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  • 2
    Electronic Resource
    Electronic Resource
    Low frequency noise in polysilicon-emitter bipolar junction transistors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6278-6288 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes experimental results on low frequency noise in several types of polysilicon-emitter NPN bipolar junction transistors. The experimental data were modelled using a combination of 1/f noise, generation-recombination noise (g-r), and shot noise, and good agreement between model calculations and experimental measurements were obtained. Observed differences in the experimental low frequency noise spectra of devices with similar geometry and under similar biasing conditions could be explained by the differences in the generation-recombination (g-r) noise contributions. Experiments were performed on devices with emitter areas varying from 1.6 to 144 μm2, and it was found that the magnitude of the flicker noise contribution KF varied inversely with emitter area AE or emitter perimeter PE. The fact that KF∼A−1E or KF∼P−1E is explained by the observation that AE∼PE within fabrication errors/tolerances. Using a set of 3.2 μm2 BJTs with pronounced g-r noise, input current noise was measured at different temperatures and from a deconvolution of the noise spectra, a trap at ∼400 meV and with a capture cross section of ∼4×10−17 cm2 was identified. Finally, the effect of different base implant and rapid thermal annealing conditions, polysilicon emitter thicknesses, and surface etching conditions on the noise magnitude were studied, and these results are also reported. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359095
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature effects on heavily doped polycrystalline silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5253-5259 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of operating temperature and current density on the resistivity of low-pressure chemical-vapor-deposition polycrystalline silicon heavily doped with different impurities, phosphorous (3.1×1020 cm−3), arsenic (4.6×1020 cm−3), or boron (3.1×1020 cm−3), were studied. The resistivity of the films was measured over a wide range of temperatures (15–195 °C) and current levels (1–20 mA). The arsenic-doped polycrystalline silicon results agree with the widely used thermionic emission model; however, unexpected results were obtained for the phosphorous- and boron-doped samples where the resistivity increases with temperature and current density. For the phosphorous and boron-doped materials, an empirical model based on carrier mobility that can predict the resistivity of the polycrystalline silicon over a wide range of operating temperatures and current densities has been developed; the agreement between the model predictions and the experimental data is good.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358441
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  • 4
    Electronic Resource
    Electronic Resource
    Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar junction transistors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 625-633 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low frequency noise characteristics of new high voltage, high performance complementary polysilicon emitter bipolar transistors have been studied. The influence of the base biasing resistance, emitter geometry, and temperature on the noise spectra are discussed. The npn transistors studied exhibited 1/f and shot noise. The pnp transistors, on the other hand, are characterized by significant generation-recombination noise contributions to the total noise. For both types of transistors, the measured output noise is determined primarily by the noise sources in the polysilicon–monosilicon interface. The level of the 1/f noise is proportional to the square of the base current (IB2) for both npn and pnp transistors. The contribution of the 1/f noise in the collector current is also estimated. The magnitude of the 1/f noise normalized to the square of the base current for devices with different emitter areas was found to be inversely proportional to the emitter area, but for the transistors with a large ratio of emitter perimeter to emitter area, the contribution of noise sources located in the emitter perimeter may be significant. For both pnp and npn transistors, 1/f noise was found to be independent of temperature, and for pnp transistors, generation-recombination noise decreases with increasing temperature. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368066
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  • 5
    Electronic Resource
    Electronic Resource
    Constant-resistance deep-level transient spectroscopy in submicron metal-oxide-semiconductor field-effect transistors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 820-825 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article describes a new variation of a deep-level transient spectroscopy (DLTS) technique convenient for the measurement of submicron field-effect transistors where standard capacitance DLTS cannot be used. Constant-resistance (CR) DLTS is similar to the conductance DLTS, but it is more sensitive and it does not require simultaneous measurement of the transconductance gm or surface mobility μ for calculation of the trap concentrations. In addition, the DLTS signal is largely independent of the transistor size, thus allowing measurements of very small-size transistors. The proposed technique is not restricted to metal-oxide-semiconductor field-effect transistors, but can be used also to study other field-effect transistors. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366763
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  • 6
    Electronic Resource
    Electronic Resource
    Averaging and recording of digital deep-level transient spectroscopy transient signals (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2464-2474 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new approach to the signal processing in digital deep-level transient spectroscopy (DLTS) systems is introduced. The problems of signal recovery from noise and efficient data storage are addressed separately from the transient signal analysis. As a result of this approach, an improved digital averaging scheme for DLTS signal recovery from noise and transient data storage is proposed. We have shown that the combined action of two complementary digital averaging techniques can improve the DLTS digital signal processing. Pseudologarithmic time averaging is efficient in reducing the number of processed data points and improving the signal-to-noise ratio for the high frequency noise components and in the transient tail. We demonstrate that the normalized errors in the magnitude measurements introduced by this type of averaging remain below 1% for pure logarithmic and below 0.1% provided that the logarithmic averaging intervals are further divided into five or more equal parts. Continuous time averaging is well suited for improving overall signal-to-noise ratio, for continuous display and processing of data, and it is more efficient in using the computer resources. The described combination of hardware and software tools for the implementation of these techniques supplies continuously fresh data and does not require any synchronization with the main computer program. Compared to other digital DLTS systems, this new approach offers an improved short delay time resolution, improved signal-to-noise ratio, and more efficient data storage. At the same time it offers real-time observation of essentially noise-free transients and, like analog systems, a real-time display of the DLTS scan. The real-time display means that the displayed transient and DLTS scan can be updated on the computer screen after each pulse even for a very large number of averaged pulses, and the result can be predicted well before the acquisition process reaches this number. The proposed techniques allow one to combine the powerful transient analysis of the digital DLTS methods with the sensitivity and the convenience of the analog methods. The described averaging and data reduction techniques are intended primarily for DLTS data processing, but the same principles can be useful for many other physical experiments involving transient data analysis. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148975
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  • 7
    Electronic Resource
    Electronic Resource
    Low-frequency noise in cadmium-selenide thin-film transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2234-2236 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise in cadmium-selenide (CdSe) thin-film transistors (TFTs) has been studied over a wide range of gate and drain biases, temperatures, and gate areas. The dependencies of the noise on the gate voltage and the gate length indicate that the 1/f noise originates from the bulk sources homogeneously distributed in the channel. The value of Hooge parameter α lies within the usual range 10−3〈α〈2×10−2 for Si TFTs and amorphous Si. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314887
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  • 8
    Electronic Resource
    Electronic Resource
    Nature of Impurities in .pi.-Conjugated Polymers Prepared by Ferric Chloride and Their Effect on the Electrical Properties of Metal-Insulator-Semiconductor Structures (1995)
    s.l. : American Chemical Society
    Chemistry of materials 7 (1995), S. 631-641 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00052a006
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  • 9
    Electronic Resource
    Electronic Resource
    On the origin of 1/f noise in polysilicon emitter bipolar transistors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1192-1195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low frequency noise in polysilicon emitter bipolar transistors (BJT) with different emitter areas (AE) was studied. In BJTs with submicron emitter area, random telegraph signals of different amplitudes and frequencies were found. Averaging of noise spectra from different submicron BJTs gives 1/f noise of the same level (normalized to the emitter area) as 1/f noise found in transistors with large emitter areas. The sheet density of traps (NT) located within the polysilicon–crystalline silicon interfacial layer and responsible for 1/f noise was estimated to be ≥3×108 cm−2. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369256
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  • 10
    Electronic Resource
    Electronic Resource
    The pulmonary circulation of some domestic animals at high altitude (1988)
    Springer
    International journal of biometeorology 32 (1988), S. 56-64 
    Details
    ISSN: 1432-1254
    Keywords: High altitude ; Pulmonary circulation ; Yaks ; Goats ; Sheep
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geography , Physics
    Notes: Abstract Pulmonary haemodynamics and the histology of the pulmonary vasculature have been studied at high altitude in the yak, in interbreeds between yaks and cattle, and in domestic goats and sheep indigenous to high altitudes together with crosses between them and low-altitude strains. Cattle at high altitude had a higher pulmonary arterial pressure than cattle at low altitude. The yak and two interbreeds with cattle (dzos and stols) had a low pulmonary arterial pressure compared with cattle, while the medial thickness of the small pulmonary arteries was less than would be expected in cattle, suggesting that the yak has a low capacity for hypoxic pulmonary vasoconstriction and that this characteristic is transmitted genetically. Goats and sheep showed haemodynamic evidence of a limited response of the pulmonary circulation to high altitude, but no evidence that the high altitude breeds had lost this response. There were no measurable differences in the thickness of the media of the small pulmonary arteries between high- and low-altitude breeds of goats and sheep. All these species showed prominent intimal protrusions of muscle into the pulmonary veins but no specific effect of high altitude in this respect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01623996
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