ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    "Designer'' interfaces in II-VI/III-V polar heteroepitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7021-7028 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The development of composite materials incorporating both II-VI and III-V compound semiconductors, such as ZnSe and GaAs, leads to the possibility of a variety of new devices of potential importance to the communications industry. In many cases, such as those involving resonant tunneling junctions and quantum well structures, the quality of the interface between the different compound semiconductors determines the ultimate quality of the device itself. Therefore, we have investigated the factors determining this interface quality for the GaAs/ZnSe system as prepared by molecular beam epitaxy. In this system, the stoichiometry of the substrate is of paramount importance. An excess of one constituent leads to high local electrical fields and poor interface morphology. Optimum growth of ZnSe on GaAs is achieved with GaAs substrate surfaces having a stoichiometry intermediate between the As- and Ga-rich extremes. We will describe a model that defines the conditions for good interface formation and summarize experimental evidence which supports the validity of this model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347641
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Optimal GaAs(100) substrate terminations for heteroepitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 355-357 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quality of heteroepitaxial growth of II-VI materials on III-V substrates, such as ZnSe on GaAs(100), depends strongly on the atomic structure and stoichiometry of the substrate. We define and describe those structures that optimize heteroepitaxial interface growth on GaAs(100) and related surfaces, and propose specific models for the c(6×4), "3×1'', (4×6), an As-lean version of the (2×4), and Se substitutional such as the (4×3). It is proposed that a good heteroepitaxial interface, with no extraneous fields and no charge imbalance, is achieved with substrate structures which lead directly to the appropriate interface stoichiometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104632
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Etching and cathodoluminescence studies of ZnSe (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 690-691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of ZnSe grown on GaAs substrates were reactive ion etched using BCl3 /Ar gas mixtures. Using an optimized etching process, photolithographically defined micrometer sized structures were etched several micrometers deep with straight sidewalls and smooth surfaces. Cathodoluminescence was measured from both etched and unetched surfaces at room temperature. Luminescence intensities of etched surfaces are shown not to be degraded by the reactive ion etching process. Cathodoluminescence intensities of etched pixels with exposed sidewalls were found to be greater than the intensities measured from unetched flat surfaces. This suggests the possibility of efficient etched light-emitting structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99852
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Planar doping with gallium of molecular beam epitaxial ZnSe (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2065-2067 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new approach to doping in ZnSe, which involves Ga deposition in spatially separated atomic planes (planar doping), is reported. The dependence of doping efficiency on the particular surface termination (Zn or Se stabilized) maintained during the deposition of the Ga dopant is investigated by Hall measurements and low-temperature photoluminescence spectroscopy, and the results are compared to those obtained for uniform doping. Under our growth conditions and for the same average amount of Ga atoms arriving at the ZnSe surface, the doping efficiency is dramatically enhanced in the case of Ga planar doping on Zn terminated surfaces. This enhancement correlates with the reduction of the broad deep luminescence bands that dominate under the other doping conditions, indicating an effective reduction of the self-compensating mechanisms. Under optimized conditions, n-type ZnSe with carrier concentration in the 1018 cm−3 range is achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100320
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2217-2219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present low-temperature ZnSe photoluminescence spectra having very narrow bound exciton linewidths (0.55 meV), which demonstrate for the first time that thin, pseudomorphic ZnSe layers with minimal inhomogeneous strain can be grown directly on GaAs by molecular beam epitaxy. Similar characterization of ZnSe/AlAs/GaAs heterostructures shows that AlAs layers up to 4 μm thick exhibit only kinetically limited, partial lattice relaxation, which prevents the overgrowth of uniform, coherently strained ZnSe layers. However, pseudomorphic ZnSe/AlAs/GaAs structures with thin ((approximately-less-than)0.5 μm) AlAs layers exhibit the narrowest bound exciton peaks ((approximately-less-than)0.37 meV full width at half maximum) ever reported for heteroepitaxial ZnSe, indicating a high degree of structural perfection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100286
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Optical investigations of the band structure of strained InAs/AlInAs quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 302-304 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report photoluminescence and photoconductivity measurements on single InAs quantum wells under a 3.4% biaxial compression. The photoluminescence line, which is in the 1.2–1.6 μm wavelength range depending on well thickness, is interpreted as recombination between electrons and holes distributed over a range of confined energy states associated with quantum well width fluctuations. Photoconductivity is found to provide spectroscopic measurements of the optical transitions even for single, extremely thin quantum wells. We find excellent agreement between the measured transition energies and the result of an envelope function calculation taking into account the effect of both strain and quantum confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99500
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    InAs strained-layer quantum wells with band gaps in the 1.2–1.6 μm wavelength range (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 892-894 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained In0.52Al0.48As/InAs single quantum wells have been grown by molecular beam epitaxy on InP substrates and their structural quality and commensurability demonstrated by transmission electron microscopy. Intense photoluminescence in the wavelength range of 1.2–1.6 μm for well widths between 10 and 30 A(ring) was obtained, indicating a very efficient carrier collection into the highly (3.4%) biaxially compressed InAs wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99264
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence characterization of ZnSe doped with Ga by bulk and planar doping techniques in molecular-beam epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3999-4005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature and low-temperature (1.7-K) photoluminescence (PL) characteristics of heteroepitaxial ZnSe layers on GaAs which are doped with Ga by either conventional (bulk) or planar doping techniques are described. Low-temperature PL peaks at 2.27 and 2.0 eV involving deep acceptor levels are introduced by Ga doping, as well as newly reported shallow acceptor levels with binding energies of approximately 68 and 85 meV. The behavior of these peaks and the excitonic transitions is studied as a function of Ga-doping level and, for the case of the planar-doped layers, surface stoichiometry during doping. The exciton peaks exhibit substantially greater broadening for doping on Zn-rich surfaces than for Se-rich surfaces, corresponding to the higher carrier concentrations observed by electrical measurements in the former case. The deep acceptor levels are found to be incorporated to a lesser degree for doping on Zn-rich surfaces, while the incorporation of the 85-meV acceptor is enhanced in this case. The net electrical compensation is evidently dominated by the behavior of the deep levels. The results are explained by assuming that both deep levels involve donor-Zn vacancy complexes, whose formation is suppressed by the excess Zn flux supplied during the planar-doping process. A comparison of the exciton spectra of nominally undoped and bulk Ga-doped samples is used to demonstrate that the residual donor in the undoped material is Ga.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343342
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4295-4300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electrical characterization of a series of ZnSe samples which are planar doped by a new approach to doping involving periodic deposition of sheets of Ga on Zn- or Se-rich surfaces. For samples planar doped on Zn-rich surfaces, the mobility could be described by ionized-impurity scattering and polar optical-phonon scattering mechanisms, while planar-doped samples on Se-rich surfaces and uniformly doped samples require additional scattering mechanisms to describe their mobilities. The latter two cases give higher mobilities than the first, a result which is in conflict with the fact that the latter have higher total ionized-impurity concentrations and compensation. These results of higher mobilities along with higher total ionized-impurity concentrations are interpreted as evidence of donor-acceptor pair formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343974
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    facet.materialart.
    Unknown
    ‘‘Designer’’ interfaces in II‐VI/III‐V polar heteroepitaxy (1991)
    American Institute of Physics
    Details
    Publication Date: 1991-05-15
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...