ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This article reports the fabrication of thick films of lead zirconate titanate (PZT) on platinum-buffered silicon substrates by screen printing. Crack-free films, up to 12 μm on a single pass, show a dielectric permittivity of 200, tangent losses of 0.05, remanent polarization of 2.5 μC/cm2, and coercive field of 40 kV/cm. The field-induced longitudinal piezoelectric coefficient d33 at 40 kV/cm dc bias and 4 kV/cm alternating field corresponded to 50 pC/N. The magnitude of the piezoelectric voltage coefficient g33, computed from the strain coefficient and dielectric permittivity, under the same conditions, was found to be 36×10−3 V m/N, higher than that of a poled PZT bulk ceramic in comparison. These results are promising for a broad variety of sensor applications. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.358621
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