Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
80 (1996), S. 3083-3090
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new, analytical method is presented for calculating the depletion-region recombination current for abrupt-junction diodes under forward bias. The method is appropriate when the recombination current is dominated by recombination through Shockley–Read–Hall centers at a single energy level whose density does not vary strongly with position through the device. The new model is systematically compared with earlier models and with the results of finite-element analyses using PC-1D. If it is reasonably assumed that PC-1D is the most accurate of the methods considered here, the others may be ranked according to their proximity to the PC-1D result. It is shown that the new method, despite its simplicity, yields results closer to PC-1D than the earlier models for many practical situations. In addition, it is shown that one existing model may be brought into agreement with the finite-element analysis by a simple modification of the limits of integration. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363168
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