Publication Date:
2011-08-24
Description:
An analysis is made of the frequency response of an Al(x)Ga(1-x)As/GaAs optical modulator operating at a wavelength of 0.83 micron and utilizing the linear-optic effect in a Mach-Zehnder configuration. It is shown that, in semiconductor modulators, electroabsorption should be taken into account in optimizing the frequency response of the device. It is also shown that, by incorporating an insulator (a semiconductor with a large band gap) between the metallic electrode and the channel, the capacitance of the electroabsorptive modulator can be kept low at a reasonable value under the worst conditions.
Keywords:
ELECTRONICS AND ELECTRICAL ENGINEERING
Type:
Microwave and Optical Technology Letters (ISSN 0895-2477); 6; 1; p. 18-22.
Format:
text
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