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  • 1
    Electronic Resource
    Electronic Resource
    A relation between EL2 (Ec−0.81 eV) and EL6 (Ec−0.35 eV) in annealed HB-GaAs by hydrogen plasma exposure (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3038-3041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present annealing and hydrogenation behaviors for EL2 (Ec−0.81 eV) and EL6 (Ec−0.35 eV) as dominant deep levels in GaAs. During rapid thermal annealing and the hydrogenation process, a relation has been identified between a midgap level group (the EL2 group) at 0.73, 0.81, and 0.87 eV, and a deep-level group (the EL6 group) at 0.27, 0.18, and 0.22 eV below the conduction band. We then discuss a relation between the two groups and their origins.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344189
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  • 2
    Electronic Resource
    Electronic Resource
    Abnormal behavior of midgap electron trap in HB-GaAs during thermal annealing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4422-4425 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of the EL2 family in horizontal Bridgman-(HB) grown GaAs by two thermal annealing methods, furnace annealing and rapid thermal annealing, was studied through deep level transient spectroscopy (DLTS) measurements, and a similar behavior of another group of electron traps was observed. As the annealing time is increased, the EL2 trap (Ec-0.81 eV) is transformed to the new trap, EX2 (Ec-0.73 eV), and finally to the other new trap, EX1 (Ec-0.86 eV). Also the EL6 group (Ec-0.18, 0.22, 0.27, and 0.35 eV) varied similarly to the EL2 family as a trap (Ec-0.27 eV) is transformed to the first trap (Ec-0.18 eV) and then the second trap (Ec-0.22 eV). This result revealed that the EL2 family is related to the EL6 group. From the study of photocapacitance quenching, the existence of metastable states of the EL2 family is identified. These results suggest that the atomic structure of the EL2 trap may be an arsenic antisite with an interstitial arsenic and a double vacancy, such as VAsAsIVGaAsGa or its complex.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340187
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  • 3
    Electronic Resource
    Electronic Resource
    Deep levels in Si- and Be-coimplanted GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 661-664 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels and electrical properties in Si- and Be-coimplanted semi-insulating GaAs, grown by liquid-encapsulated Czochralski methods, were investigated. The Si implantation with a dose of 8×1012 ions cm−2 and energy of 65 keV was performed into GaAs already implanted with a Be dose of 2×1012 cm−2 and 90 keV for the purpose of an abrupt implant profile in a deeper region. During the Be coimplantation, an electron deep level at 0.62 eV below the conduction band and a hole deep level at 0.68 eV above the valence band were newly observed. In the Be-implanted region of ion-implanted GaAs, the deep levels Ec − 0.62 eV and Ev + 0.68 eV dominate, but are not found in the bulk. From this work, it is suggested that the Ec − 0.62 eV trap could be the defect due to the implantation damage and that the Ev + 0.68 eV trap could be the Be complex related to a Si dose during the implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349670
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  • 4
    Electronic Resource
    Electronic Resource
    Electric-field-enhanced dissociation of the hydrogen-Si donor complex in GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5077-5080 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The passivation and dissociation process of the hydrogen-Si donor complex in plasma-hydrogenated GaAs was presented. The temperature dependent values of dissociation frequencies νd which the first-order kinetics permit, satisfy the relation νd=5.7×1013 exp(−1.79±0.05 eV/kT) s−1 for the no-biased anneals. During electric-field-enhanced anneal experiments, we confirm that no in-diffusion from the passivated region to the bulk is observed in the temperature ranges below 150 °C, and that there is a dissociation frequency region independent of the annealing temperature. Finally, from the electric field annealing experiment on the passivated donor in n-type GaAs, it is suggested that the hydrogen atom in Si-doped GaAs exposed to the plasma hydrogen is negatively charged with the gain of free electrons and passivates the Si donor, and also that the hydrogen atom or the electron of the hydrogen-Si donor complex can be easily released by the electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347070
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  • 5
    Electronic Resource
    Electronic Resource
    Room-temperature hydrogenation effect on Si- and Be-ion-implanted GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1690-1692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenation effects on Si- and Be-ion-implanted GaAs exposed to the hydrogen plasma were investigated. In the sample hydrogenated for 60 min at room temperature, electron mobilities were increased about 21% at 300 K and 1400 cm2/V s at 150 K, showing a little change of the activated Si donor profile. Also, by using deep-level transient spectroscopy and optical deep-level transient spectroscopy, it was observed that the electron and hole traps at Ec−0.62- and Ev+0.68-eV levels, which have been reported as defects due to the implanted damage, were efficiently decreased during the room-temperature hydrogenation. This effect persists during the anneal at 400 °C during 5 min in an argon ambient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351198
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  • 6
    Electronic Resource
    Electronic Resource
    Deep levels in undoped bulk InP after rapid thermal annealing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1665-1668 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in rapid thermal annealed InP in metal-insulator-semiconductor (MIS) structures have been studied using deep level transient spectroscopy. Two different insulating layers used in forming MIS structures, a silicon nitride layer and an oxide layer, were fabricated by plasma enhanced chemical vapor deposition and concentrated nitric acid, respectively. In the samples annealed at temperatures between 700 and 900 °C for 10 s, two deep levels having apparent energy depths of 0.43 and 0.35 eV below the conduction band were newly generated. Then, it is considered that they are the defects related with phosphorus vacancy and its complex. Other deep levels observed between 0.55 and 0.79 eV below the conduction band were related with insulating layers. We show an evidence that they might be interface states in the junction of InP and insulator.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346649
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  • 7
    Electronic Resource
    Electronic Resource
    Hydrogenation effect on electrical and optical properties of GaAs epilayers grown on Si substrates by metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2405-2407 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenation effects on electrical and optical properties in GaAs epilayers grown on Si substrate by metalorganic chemical vapor deposition have been investigated. In as-grown GaAs layers on Si substrates, typically four deep levels at 0.81, 0.68, 0.57, and 0.53 eV below the conduction band were observed by deep level transient spectroscopy. After hydrogen plasma exposure at 250 °C for 2.5 h, the 0.68 eV level disappeared. In addition, the reverse leakage current in the hydrogenated sample decreased by three orders of magnitude compared to the untreated sample. These effects persist after dehydrogenation process with a 5 min, 400 °C anneal. The results indicate that the hydrogenation for GaAs-on-Si has some benefits to its device application.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104885
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1380-1383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The leakage current effects for the midgap levels in the electron-beam-metallized (EBM) Al/GaAs junction were studied by isothermal capacitance transient spectroscopy. In this junction, a new electron deep level which might be due to the surface defects induced during the EBM process was detected. The observed thermal emission time constants of the new deep level and the EL2 level (Ec −0.81 eV) in EBM-Al/GaAs were increased during the low-temperature annealing up to 355 °C, while the leakage current density in this junction was decreased down about 4×10−7 A/cm2. We represent that these behaviors of the midgap levels could be well explained by the effect of the leakage current in the Al/GaAs Schottky junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345692
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  • 9
    Electronic Resource
    Electronic Resource
    Deep electron traps in GaAs layers grown on (100)Si substrates by metalorganic chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2454-2456 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep electron traps in GaAs layers grown on (100) 3 °-off Si substrates by metalorganic chemical vapor deposition were investigated by deep-level transient spectroscopy and a computer simulation method. The four electron traps with the activation energies of 0.81, 0.68, 0.57, and 0.53 eV below the conduction band were measured in GaAs epilayers on Si substrates, whereas only the EL2 level (Ec−0.81 eV) was detected in GaAs on a GaAs substrate. From the dependencies of concentration on the thickness of GaAs epilayer and Si substrate, it was assumed that the Ec−0.57 eV trap might be a Si-dislocation complex defect. The Ec−0.68 eV trap showed a similar behavior to that of the deep trap created in the plastically deformed bulk GaAs, and then its origin was supposed to be a defect induced by a stress due to the differences of thermal expansion coefficient and lattice parameter between Si and GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345493
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  • 10
    Electronic Resource
    Electronic Resource
    Metastable behavior of deep levels in hydrogenated GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1866-1868 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New metastable behavior of deep levels is found in hydrogenated GaAs doped with Si. A deep level at 0.60 eV below the conduction-band minimum (Ec) is generated during hydrogenation and shows metastable for the Ec − 0.42 eV trap. From the defect transformations observed in biased anneals, these defects are found to be metastable defects associated with hydrogen atoms. Especially, the 400 K biased-anneal experiments indicate that an Ec−0.33 eV trap could be an electric field induced defect, transformed from other intrinsic defects. The Ec − 0.60 eV trap in hydrogenated GaAs could be a hydrogen complex associated with Ec − 0.42 eV trap and the hydrogen atom plays an important role in a metastability of deep level defects in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105056
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