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  • 1
    Electronic Resource
    Electronic Resource
    Interband tunneling through a heavy hole state (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6443-6445 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated interband tunneling transport through a hole well in five GaSb/AlSb/GaSb/AlSb/InAs type II tunnel devices in which the effect of the variation of barrier and well widths is systematically studied. Low temperature measurements were performed using high magnetic fields applied perpendicular to the current and hydrostatic pressures as external perturbations. A resonant current through the ground heavy hole subband in the GaSb well could be identified for the first time. This examination points out (i) the role of in-plane momentum conservation in determining the resonance onset voltage, and (ii) the occurrence of a shoulder in the current when a maximum of states conducts through a resonant subband.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355128
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  • 2
    Electronic Resource
    Electronic Resource
    The effects of GaSb/InAs broken gap on interband tunneling current of a GaSb/InAs/GaSb/AlSb/InAs tunneling structure (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4432-4435 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and study a new GaSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling diode by varying the thicknesses of the InAs layer. A twice-higher peak current density and a three-times-higher peak-to-valley current ratio in the proposed structure with a 30-A(ring)-thick InAs layer were observed relative to the structure with no InAs layer. This result indicates that the characteristic of the negative differential resistance can be improved simply by placing a thin effective InAs barrier on the GaSb side of the GaSb/AlSb/InAs single-barrier structure. The increase of the peak current is interpreted as the result of forming a quasi-bound state in the GaSb well. This interpretation is supported by the observation that the current-voltage characteristic of the proposed structure is similar to that of a conventional GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350783
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  • 3
    Electronic Resource
    Electronic Resource
    Optoelectronic device mapping using differential imaging techniques (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3837-3842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mapping technique has been developed that uses differential imaging to characterize semiconductor optoelectronic devices. Although the technique was developed for examination of optical modulators, it has been extended to provide information on the uniformity and bandgap of any material through which one can transmit light. The sharpness of the bandedge, maximum absorption strength, and the film thickness determine the sensitivity of the technique for any particular application. For example, the bandedge sensitivity in 100 periods of InGaAs/GaAs multiple quantum wells was ±20 μeV and can be detected at each location in the field of view in under three minutes. This technique has been applied to modulators designed using strained layer materials for use at a 1-μm operating wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349187
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  • 4
    Electronic Resource
    Electronic Resource
    Performance characteristics of In0.2Ga0.8As/GaAs multiquantum-well lasers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3822-3825 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance characteristics of ridge waveguide In0.2Ga0.8As/GaAs multiquantum-well lasers are reported. The lasers emit more than 50 mW/facet in the temperature range 20–100 °C in the fundamental transverse mode. The external differential quantum efficiency of 250-μm-long lasers is 0.4 mW/mA/facet. The internal optical loss is 14 cm−1. The optical gain is found to vary linearly with current. The increase in threshold current with increasing temperature in these lasers is primarily due to decreasing carrier lifetime (increased carrier loss) at high temperature. Increasing the heterobarrier height may further improve the high-temperature performance of these devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346265
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  • 5
    Electronic Resource
    Electronic Resource
    Interband tunneling between valence-band and conduction-band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple-barrier structure (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 960-963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the experimental studies of an interband tunneling effect between GaSb valence-band and InAs conduction-band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple-barrier interband tunneling device. Multiple negative differential resistances were observed both at room temperature and 77 K. By varying the InAs well width to adjust the alignment of the conduction-band and the valence-band quasi-bound states, we observed more than one order of magnitude variation in the peak current density, indicating a significant quantization effect. Possible current conduction mechanisms were discussed based on the dependence of the peak-current density on the InAs well width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351772
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  • 6
    Electronic Resource
    Electronic Resource
    High-speed modulation and nonlinear damping effect in InGaAs/GaAs lasers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2476-2478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-speed modulation characteristics of ridge waveguide InGaAs/GaAs strained quantum well lasers have been investigated. The lasers have bandwidth of 12 GHz at 21 mW of output power. The differential gain coefficient, the nonlinear damping factor (κ factor) and the gain suppression coefficient (ε) are found to be 6.4 × 10−16 cm2, 0.6 ns and 6.2 × 10−17 cm3, respectively. The above differential gain coefficient and κ factor for InGaAs/GaAs strained quantum-well lasers are a factor of 2 larger than that for unstrained InGaAs/InP quantum-well lasers. The ε value for these strained and unstrained quantum-well lasers are comparable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349405
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  • 7
    Electronic Resource
    Electronic Resource
    Quantization effect on capacitance-voltage and current-voltage characteristics of an InAs/AlSb/GaSb interband tunneling diode (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4286-4289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance-voltage measurements were performed on the InAs/AlSb/GaSb interband tunneling diode at various frequencies. Theoretical analyses using a self-consistent Schrödinger–Poisson solver were found in agreement with the experimental results under the forward-bias condition. The quantization energy of each subband of the electron in the InAs accumulation region is used to predict the tunneling current cutoff voltage in agreement with that of the current-voltage measurements. Therefore, the cutoff of the interband tunneling process is mainly caused by the crossover of the electron subband energy in the InAs conduction band with respect to the valence band of the GaSb electrode due to the increased external bias voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346222
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  • 8
    Electronic Resource
    Electronic Resource
    On the effect of the barrier widths in the InAs/AlSb/GaSb single-barrier interband tunneling structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3451-3455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the interband tunneling current on AlSb barrier widths is studied in the InAs/AlSb/GaSb single-barrier diode structures. The experimental results show that the peak current density displays an exponential dependence on the barrier width. The Wentzel-Kramers-Brillouin approximation combined with the k⋅p two-band model were used in analyzing the energy level in the AlSb barrier through which the peak tunneling currents occur. The energy level thus obtained (0.48±0.10 eV above the valence band edge of the AlSb) agrees with the valence-band offset (0.40±0.15 eV) between the AlSb and the GaSb obtained by x-ray photoemission measurement reported by Gualtieri et al. [Appl. Phys. Lett. 49, 1037 (1986)]. By adjusting the barrier width properly, we obtained a high peak current density of 24 kA/cm2 (with a peak-to-valley ratio of 1.4) and a high peak-to-valley ratio of 4.5 (with a peak current density of 3.5 kA/cm2) at room temperature. In addition, the peak-current voltages for different AlSb barrier widths were calculated and compared with the measured results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346355
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  • 9
    Electronic Resource
    Electronic Resource
    A new GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling diode and its tunneling mechanism (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2997-3000 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and demonstrate a new GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling diode with a peak-current density as high as 7.6 kA/cm2 and a peak-to-valley current ratio of 5. In this device, the electrons in the InAs conduction band can resonantly tunnel through the AlSb/GaSb/AlSb double barrier into the GaSb valence band. By narrowing the GaSb well width from 65 to 30 A(ring), a drastic reduction of the tunneling current was found experimentally. This reduction is interpreted as evidences of the effect of the interband resonant tunneling process and the role of the light hole in the GaSb valence band. In addition, compared with the InAs/AlSb/GaSb/AlSb/InAs tunneling structure, a twice larger peak current density was obtained in the proposed structure which is attributed to a larger density of states of the GaSb light hole valence band compared with that of the InAs conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346437
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of Te-doped GaSb grown by molecular beam epitaxy using SnTe (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 277-281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of SnTe as a source of donor impurities in the growth of n-type GaSb by molecular beam epitaxy (MBE) is investigated. Hall carrier concentrations between 1.23×1016 and 3.7×1018 cm−3 have been obtained with room-temperature Hall mobility as high as 5114 cm2/V s for a lightly doped GaSb layer with nH = 3.8 × 1016 cm−3. The temperature-dependent Hall concentrations have been analyzed according to the two-band model to obtain information about the effect of the band structure of GaSb on the electrical properties. In addition, the effects of V-III flux ratio on Te incorporation in GaSb are studied. The measured carrier concentrations are found to be insensitive to the antimony-to-gallium beam equivalent pressures (from 1.5 to 9) at a growth temperature of 500 °C. These results may lead to SnTe being one of the donor dopants of choice in the MBE growth of n-type GaSb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350296
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