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  • 1
    Electronic Resource
    Electronic Resource
    Optoelectronic device mapping using differential imaging techniques (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3837-3842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mapping technique has been developed that uses differential imaging to characterize semiconductor optoelectronic devices. Although the technique was developed for examination of optical modulators, it has been extended to provide information on the uniformity and bandgap of any material through which one can transmit light. The sharpness of the bandedge, maximum absorption strength, and the film thickness determine the sensitivity of the technique for any particular application. For example, the bandedge sensitivity in 100 periods of InGaAs/GaAs multiple quantum wells was ±20 μeV and can be detected at each location in the field of view in under three minutes. This technique has been applied to modulators designed using strained layer materials for use at a 1-μm operating wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349187
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of zinc diffusion on impurity profiles of carbon- and beryllium-doped thin GaAs layers grown by chemical beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8426-8428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A significant difference between beryllium and carbon distribution in GaAs after zinc diffusion is presented. It is shown that grown-in carbon is stable and remains localized even after zinc diffusion, whereas grown-in beryllium diffuses very rapidly in the presence of diffusing zinc. This effect can be attributed to the difference in the crystal lattice site which the dopant occupies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347413
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  • 3
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron diffraction studies on the molecular-beam-epitaxial growth of AISb, GaSb, InAs, InAsSb, and GaInAsSb on GaSb (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4572-4577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quality of materials grown by molecular-beam epitaxy (MBE) is closely related to the surfaces kinetics in which the surface reconstructions, growth temperatures and molecular species play important roles. We present our studies on the MBE growth conditions, surface reconstructions and surface morphologies of A1Sb, GaSb, and InAs grown on (100) GaSb, and of InAsSb and GaInAsSb lattice matched to GaSb using dimers As2 and Sb2 in a wide temperature range of ∼400–650 °C. Certain surface reconstructions for GaSb and InAs which have not been reported in the literature are identified, and the conditions for their existence are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335362
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  • 4
    Electronic Resource
    Electronic Resource
    Capacitance–voltage and current–voltage characterization of AlxGa1−xAs–GaAs structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7091-7098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGa1−xAs–GaAs structures with thin (400–1000 A(ring)) Cr-doped or unintentionally doped AlxGa1−xAs layers (0.3≤x≤1) were grown on n+ GaAs substrate by molecular-beam epitaxy. The AlxGa1−xAs–GaAs interface and the insulating properties of thin AlxGa1−xAs layers at 300 K have been studied by capacitance–voltage and current–voltage measurements, respectively. An AlxGa1−xAs–GaAs interface state density in the lower 109 eV−1 cm−2 range was obtained. The insulating properties of thin AlxGa1−xAs layers were found to be controlled by AlxGa1−xAs–GaAs interface band offsets (ΔEo,ΔEv) and metal–AlxGa1−xAs barrier height ΦBn in accumulation and deep depletion, respectively, rather than by AlxGa1−xAs bulk properties such as specific bulk resistivity. Furthermore, required electrical properties of insulating layers employed in metal–insulator–semiconductor structures are discussed using a self-consistent heterostructure model based on Poisson's equation and current continuity equations. Finally, a fundamental equation for the formation of inversion channels has been derived. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360416
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  • 5
    Electronic Resource
    Electronic Resource
    InAsyP1−y/InP multiple quantum well optical modulators for solid-state lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1366-1368 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the operation of strained-layer InAsyP1−y/InP multiple quantum well optical modulators at wavelengths compatible with solid-state lasers such as neodymium-doped yttrium aluminum garnet. A structure having 50 periods of 100 A(ring) InAsyP1−y quantum wells with 100 A(ring) InP barriers is described that has an exciton peak at 1.05 μm and a single pass transmission contrast ratio of 1.4. Favorable comparison is made to similar InxGa1−xAs/GaAs structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104310
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  • 6
    Electronic Resource
    Electronic Resource
    Chemical beam epitaxial growth of InAs using trimethylindium and arsine (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2219-2221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth study of InAs by chemical beam epitaxy. Growth conditions for high quality epilayer has been determined from in situ reflection high-energy electron diffraction measurement, surface morphology, photoluminescence, and Hall measurement. The growth rate measurement shows that the pyrolysis characteristics of trimethylindium are qualitatively similar to that of triethylgallium which have previously been simulated by a surface chemical kinetics model. The boundary condition between In- and As-stabilized surface in the previously unexplored temperature range of 520–560 °C gives an activation energy of 3.1 eV for the As desorption from the InAs surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102972
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  • 7
    Electronic Resource
    Electronic Resource
    Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3 (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1688-1690 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Te evaporated from a Sb2Te3 compound source has been used to dope GaSb grown by molecular beam epitaxy. Te concentrations up to 2×1019 cm−3 followed a simple Arrhenius behavior with respect to source temperature. Efficient incorporation of Te remained insensitive to growth temperature until above 540 °C. Carrier density was found very close to Te doping level up to about 2×1018 cm−3. Above that, electron mobility as well as crystallinity deteriorated with increasing Te concentration. A dependence of surface reconstruction on Te doping level was observed. A complete change from (1×3) to (2×1) pattern occurred when Te concentration considerably exceeded its solubility limit in GaSb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103118
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  • 8
    Electronic Resource
    Electronic Resource
    Direct observation of GaAs atomic layer epitaxy by reflection high-energy electron diffraction (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1244-1246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layer epitaxy (ALE) of GaAs using trimethylgallium and triethylgallium by chemical beam epitaxy is reported. Reflection high-energy electron diffraction is employed to monitor the formation of each individual monolayer directly. A new (4×8) surface reconstruction, characteristic of an ordered chemisorbed molecular Ga monolayer, is observed for the first time. Each Ga atom in this transitional layer has at least one alkyl radical cleaved away. The stability of this transitional stage varies depending on the alkyl group involved and the temperature. Dynamical evolution of this adsorbed layer is described. The chemical properties of this overlayer dictate the GaAs ALE growth conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101666
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  • 9
    Electronic Resource
    Electronic Resource
    Diffusion of atomic silicon in gallium arsenide (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 293-295 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon impurities with an initial Dirac-delta-function-like distribution profile are diffused into GaAs using rapid thermal annealing. The diffusion of atomic Si is determined by a novel method of comparing experimental capacitance-voltage profiles with a corresponding self-consistent profile calculation. Capacitance-voltage profiles broaden from 30 to 137 A(ring) upon rapid thermal annealing at 1000 °C for 5 s. The diffusion coefficient and the activation energy of atomic Si diffusion in GaAs are determined to be D0=4×10−4 cm2/s and Ea=2.45 eV, respectively. The diffusion coefficient is two orders of magnitude smaller as compared to Si-pair diffusion in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99917
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  • 10
    Electronic Resource
    Electronic Resource
    Room-temperature operation of hot-electron transistors (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 984-986 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the first room-temperature operation of a double heterojunction unipolar hot-electron transistor. Our test structure has a current gain greater than 10 and a measured current drive capability in excess of 1200 A cm−2. The device uses an indirect, wide-band-gap AlSb0.92As0.08 emitter and the transistor base is a 100-A(ring)-wide InAs layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98784
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