Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 2885-2887
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have examined fluctuations in the tunneling current of 3.5 nm SiO2 barriers for voltages in the direct tunneling regime. We find a 1/f power law for the spectral density of the fluctuations where f is the frequency. This 1/f noise can be attributed to fluctuations of a trap assisted tunneling current through the oxide that causes current noise but is not evident in the I–V curves. We suggest that this noise may be a more sensitive probe of trap assisted tunneling and degradation in thin oxides than other measures. At voltages above a threshold of 2.5 V, we observe the reversible onset of non-Gaussian current transients in the noise. The onset of these current transients can be related to a transition in the spacial uniformity of the tunneling current density that may result in eventual breakdown of the oxide. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117351
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