ISSN:
1551-2916
Source:
Blackwell Publishing Journal Backfiles 1879-2005
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
A description is given of the nonohmic behavior obtained in (SnxTi1−x)O2-based systems. A matrix founded on (SnxTi1−x)O2-based systems doped with Nb2O5 leads to a low-voltage varistor system with nonlinear coefficient values of ∼9. The presence of the back-to-back Schottky-type barrier is observed based on the voltage dependence of the capacitance. When doped with CoO, the (SnxTi1−x)O2-based system presents higher nonlinear coefficient values (〉30) than does the SnO2-based varistor system.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1111/j.1151-2916.2002.tb00084.x
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