ALBERT

Notes: Impedance, current–voltage–luminosity and spectral measurements have been carried out on indium-tin-oxide/N,N′-diphenyl-N,N′-bis(3-methylphenyl)1-1′-biphenyl-4,4′-diamine (TPD)/Al light emitting diodes. The devices have a blue/violet emission with a spectrum peaked at 404 nm. Capacitance–voltage measurements show that at zero bias the devices are fully depleted. The impedance measurements show that the devices can be modeled on a single, frequency-independent parallel resistor-capacitor RPCP circuit with a small series resistance RS. RP changes with applied bias and temperature, while CP remains constant. The values of CP give cursive-epsilonr=3.0±0.3. Analysis of the current–voltage (J–V) characteristics show that the dominant conduction mechanism cannot be either ohmic, trap free space charge limited, or tunneling injection. The temperature and thickness dependence indicate that it must be either thermionic emission or thermally assisted tunneling, the carrier density varying from about 1010/1011 to 3×1013 cm−3 over the measured bias range. The EL efficiency increases 20 fold upon cooling but shows little variation with bias at all temperatures, indicating the same mechanism is responsible for the injection of both holes and electrons. Modeling the results with thermionic emission suggests that image force lowering is responsible for the variation of the current with applied bias, but the calculated injection barrier height and Richardson constant are much smaller than expected. This cannot be explained by models based on a backflowing surface recombination current due to the high carrier mobility found in TPD. © 1999 American Institute of Physics.

Notes: We report electroabsorption studies of poly(2-methoxy-5-ethyl(2′-hexyloxy) para-phenylene vinylene) light-emitting diodes. An electric field develops during operation which opposes the field of the applied bias. The counter field builds up within 5 s of turning on the device, increases in magnitude with the operating voltage, and decays exponentially with a time constant between 15 and 32 s. We attribute the counter field to bulk carrier traps and discuss its relevance to the increase of the turn-on voltage as organic light-emitting diodes degrade. © 1999 American Institute of Physics.

Notes: Current–voltage, impedance, and transient conductance measurements have been carried out on indium-tin-oxide/poly(phenylene vinylene)/Al light emitting diodes. In these devices injection and transport is expected to be dominated by positive carriers. Fowler–Nordheim tunneling theory cannot account for the temperature dependence, the thickness dependence, or the current magnitude of the current–voltage characteristics. Space-charge limited current theory with an exponential distribution of traps is however in extremely good agreement with all of the recorded current–voltage results in the higher applied bias regime (approximately 0.7≤V/d≤1.6×106 V cm−1). This gives a trap density Ht of 5(±2)×1017 cm−3 and the product of μNHOMO of between 1014 and 5×1012 cm−1 V−1 s−1. Assuming NHOMO is 1020 cm−3 gives an effective positive carrier mobility between 10−6 and 5×10−8 cm2 V−1 s−1. The characteristic energy Et of the exponential trap distribution is 0.15 eV at higher temperatures (190≤T≤290 K), but this decreases as the devices are cooled, indicating that the distribution is in fact a much steeper function of energy closer to the highest occupied molecular orbital (HOMO) levels. The current–voltage characteristics in the lower applied bias regime (approximately V/d≤0.7×106 V cm−1) can be fitted to pure space-charge limited current flow with a temperature and field dependent mobility of Arrhnenius form with a mobility at 290 K close to the above values. If NHOMO lies between 1021 and 1019 cm−3, then the trap filled limit bias gives a mobility independent value of Ht of 3(±1)×1017 cm−3. Capacitance–voltage measurements show that at zero bias the devices are fully depleted, and that the acceptor dopant density NA must be less than about 1016 cm−3. The impedance results show that the devices can be modeled on a single, frequency independent, parallel resistor-capacitor circuit with a small series resistor. The variation of the resistor and capacitor in the parallel circuit with applied bias and temperature are consistent with the space-charge limited current theory with the same exponential trap distribution used to model the current–voltage characteristics. Initial results for transient conductance measurements are reported. The transients have decay times greater than 300 s and exhibit a power-law dependence with time. This is shown to be exactly the behavior expected for the decay of an exponential trap distribution. Measurements at higher temperatures (290≥T≥150 K) give an Et of 0.15 eV, in excellent agreement with that found from the current–voltage measurements. This value of Et is exactly that found by similar analysis of the current–voltage characteristics in negative carrier dominated dialkoxy poly(phenylene vinylene) and Mq3 devices. It is proposed that this bulk transport dominated behavior is purely a consequence of hopping conduction through an approximately Gaussian density of states in which the deep sites act as traps. © 1997 American Institute of Physics.

Notes: The current–voltage (J–V) characteristics of ITO/polymer film/Al or Au structures of poly(phenylene vinylene) (PPV) and a dialkoxy PPV copolymer have been recorded for a range of different film thickness d and temperatures T. At high applied bias all the characteristics can be fitted over a given range to a power law J=KVm, where m increases with decreasing T, log(K) is proportional to m, and K is proportional to d−α m, where α∼2 (ITO/polymer film/Al devices) and ∼1 (ITO/polymer film/Au devices). Different single carrier space charge limited conduction theories have been used to try and explain this behavior. The analytical theory in which the carrier density is decreased by an exponential trap distribution lying below effectively isoelectronic transport states is in good agreement, but cannot explain the thickness dependence of the ITO/polymer film/Au devices and can be criticized as being physically unreasonable. A numerical analysis in which the mobility has the field and temperature dependence found for hopping transport in disordered systems is also in good agreement, but can only fit a small range of J and cannot explain the magnitude of K, the temperature dependence of m or the abrupt change in slope in the J–V characteristics with increasing bias. Mixed models are equally good but cannot explain the deviations from experiment. We consider that further experimental studies of carrier mobilities and the nature of the traps present in such materials is required to distinguish between these models and resolve the nature of bulk limited conduction in conjugated polymers. © 1998 American Institute of Physics.

Notes: : A Helley-Smith pressure differential bedload sampler was used to measure bedload transport at consecutive riffle sections of a riffle-pool-riffle sequence on Bambi Creek, a small (154 ha), second-order stream on Chichagof Island, Alaska, during four storms over a 2-year period. Maximum bedload transport rate measured was 4920 kg/h at a streamflow of 2.35 m3/s corresponding to a storm having a 5-year return interval. Transport of larger sediment (〉 8 mm) varied systematically with streamflow at the two sampling locations. At flows up to approximately bankfull, transport of large sediment was greatest at the upstream site; at flows above bankfull, transport of large sediment was greatest at the downstream site. The net import of large sediment to the pool during moderate stormflows and net export of large sediment from the pool during flows above bankfull may be related to a “convergence” or “reversal” of competence between the upstream riffle and subsequent pool at flows approximating bankfull stage. Cross-sections monitored within the study reach indicate that stormflows resulted in net filling of the riffle sections and net scour of the pool; periods of low streamflow resulted in net scour of the riffles and net filling of the pooL

Notes: Type I restriction enzymes comprise three subunits only one of which, the S polypeptide, dictates the specificity of the DNA sequence recognized. Recombination between two different hsdS genes, SP and SB, led to the isolation of a system, SQ, which had a different specificity from that of either parent. The finding that the nucleotide sequence recognized by SQ is a hybrid containing components from both the SP and SB target sequences suggested that DNA recognition is carried out by two separable domains within each specificity polypeptide. To test this we have made the recombinant gene of reciprocal structure and demonstrate that it encodes a polypeptide whose recognition sequence, deduced In vivo, is as predicted by this model. We also report the sequence of the SB specificity gene, so that information is now available for the five known members of this family of enzymes. Ali show a similar organization of conserved and variable regions. Comparisons of the predicted amino acid sequences reveal large non-conserved areas which may not even be structurally similar. This is remarkable since these different S subunits are functionally identical, except for the specificity with respect to the DNA sequence with which they interact. We discuss the correlation of the variation in polypeptide sequence with recognition specificities.