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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1-7 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temporal evolution of electrons in a biased double-well superlattice, subjected to an ultrashort interband excitation, is theoretically examined. Both the temporal oscillations of the induced current and the evolution of the photoexcited electron concentration are considered for different parameters of the structure subjected to a δ-pulse excitation. Due to the mixing of the Wannier–Stark-ladder branches, the induced response depends on the applied bias voltage in a complicated way. In particular, long-time beats appear in the vicinities of intra- and inter-cell anti-crossings of the energy spectrum. These dependencies are examined within the framework of the Kane model, invoking the parabolic approximation for electron and heavy hole states. Numerical calculations of the carrier coherent dynamics are performed for the case of a δ-pulse excitation and with a phenomenologically introduced damping factor. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 2854-2858 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: This paper presents a method to analyze thermal desorption spectra based on area integration of the desorption peaks. An expression is derived for the rate of desorption in a thermal-activated process which permits evaluation of the rate from the intensity and area values for each point of the curve. Arrhenius plots of the rate data yield the activation energy and attempt frequency for desorption. The order of the desorption process is determined from the best linear fit in the Arrhenius plots. Included are applications for analyzing thermal desorption spectra obtained with a thermal conductivity detector or a mass spectrometer. Analyses of NO desorption from KNbO3 and H2 desorption from Ni surfaces illustrate the method.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1547-1552 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the influence of band mixing on the dynamics of hole tunneling in asymmetric GaAs–Ga1−xAlxAs triple quantum wells. A combination of the time-dependent Schrödinger equation and the Luttinger Hamiltonian is used to calculate the terahertz radiation from excitons. When the electric field required for resonance of electrons between the central and right well coincides with the field needed for hole resonance between the central and left well the radiation is strongly increased. If this field coincides with the hole mixing field at k(parallel)≠0, a new modulation of the dipole emission appears, being drastically affected in frequency and amplitude. The calculated effect is greater than previous results for asymmetric double quantum wells. © 1996 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6147-6150 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we have numerically integrated in space and time the effective mass Schrödinger equation for an electron in a GaAs/AlAs quantum well. Considering the electron–phonon interaction and an external electric field, we have studied the electronic tunneling escape process from semiconductor quantum wells. In this way, electronic lifetimes have been obtained at different well widths and applied electric fields. © 1995 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4983-4988 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we have numerically integrated in space and time the effective mass Schrödinger equation for an exciton in a semiconductor quantum-well structure. Considering a Coulomb interaction between the electron-hole pair and an external electric field, we have studied the excitonic tunneling escape process from semiconductor quantum wells. Our method of calculation has been applied to types-I, -II, and -III quantum-well superlattices. In addition, we present the calculated excitonic lifetimes for the GaAs/GaAlAs, InAs/GaSb, and HgTe/HgCdTe systems under an external electric field. In the HgTe/CdTe system, the possibility of having similar electron and hole lifetime values is also found if the applied electric field is large enough.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5106-5110 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Coherent dynamics of electrons in the triple tunnel-coupled quantum wells after an ultrafast optical excitation is studied. In a collisionless approximation, we consider temporal evolution of the electron distribution for different parameters of structure and pulse duration. Due to mixing of the tunneling frequencies under the three-level tunneling resonance condition, transient evolution of the dipole moment demonstrates different kinds of behavior: harmonic oscillations, beats, and nonperiodic oscillations. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5850-5852 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One of the important problems in bulk ferromagnetism is still the determination of magnetization as a function of temperature. The problem becomes more complicated when one tries to explain the magnetization of thin films near Tc. The experimental situation is far from clear, mainly because the experiments are difficult to perform. We have implemented a thermogravimetric technique using a modern microbalance to determine the magnetization behavior of thin films of pure Fe near Tc. We are able to obtain very precisely the films' magnetization, by measuring the force exerted over the films when they are imbedded in a fixed external magnetic field, with this technique. We prepared several samples of pure Fe films, evaporated in ultrahigh vacuum conditions onto Cu foils ranging in thickness between 50 and 300 nm and measured their magnetization near the critical point. The value of the Tc of the films is systematically lowered from the bulk Tc, being 342 K lower for the 50 nm films. The magnetization curves show a dependence on the temperature as a series containing terms in (T/Tc)3/2, (T/Tc)5/2, and (T/Tc)7/2 at temperatures low compared with Tc. Near Tc, the magnetization decreases linearly on temperature for films of all thicknesses. © 1995 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7959-7964 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The purpose of this work is to study the influence of asymmetric doping positions on the electronic properties of tunnel-coupled double quantum wells (DQWs) in an in-plane magnetic field. The doping asymmetry introduces peculiarities in the gap due to the anticrossing of the two branches of the electronic dispersion relations. The built-in potential caused by the doping dramatically affects the self-consistent Fermi energy renormalization and strongly opposes an applied bias. As a result, the magnetization shows an abrupt jump when the transition from vertical to horizontal anticrossing occurs. The absolute value of the magnetoinduced voltage of two dimensional electrons in DQWs increases if the Fermi level is localized near such peculiarities and shows additional features in comparison with the symmetric-doping case. We suggest that the transverse voltage induced by a magnetic field and the magnetization are powerful tools for the experimental study of doping characteristics and equilibrium magnetic properties of quantum heterostructures. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4666-4669 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Linear electro-optic effects in zincblende semiconductors are theoretically analyzed by means of a microscopic simple model without any fitting of parameters. Faust–Henry, second harmonic generation, and linear electro-optic coefficients are obtained from the calculation of the derivatives of the susceptibility with respect to electric fields and ionic displacements. Our results for GaP, GaAs, InP, ZnSe, and ZnTe are in satisfactory agreement with the available experimental information.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1216-1218 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural changes in Pd and Pd–Ru alloys induced by the repeated absorption–desorption of hydrogen have been studied. It is found that absorption–desorption cycles produce structural changes in Pd whereas the addition of small amounts of Ru inhibits these hydrogen-induced changes. The experimental results show that bulk hydrogen absorption occurs in Pd, while hydrogen surface adsorption becomes dominant over bulk absorption, in the Pd–Ru alloy. © 1995 American Institute of Physics.
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