Publication Date:
2006-04-15
Description:
Ultrathin epitaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization. The material can be patterned using standard nanolithography methods. The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of the charge carriers. Patterned structures show quantum confinement of electrons and phase coherence lengths beyond 1 micrometer at 4 kelvin, with mobilities exceeding 2.5 square meters per volt-second. All-graphene electronically coherent devices and device architectures are envisaged.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Berger, Claire -- Song, Zhimin -- Li, Xuebin -- Wu, Xiaosong -- Brown, Nate -- Naud, Cecile -- Mayou, Didier -- Li, Tianbo -- Hass, Joanna -- Marchenkov, Alexei N -- Conrad, Edward H -- First, Phillip N -- de Heer, Walt A -- New York, N.Y. -- Science. 2006 May 26;312(5777):1191-6. Epub 2006 Apr 13.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/16614173" target="_blank"〉PubMed〈/a〉
Print ISSN:
0036-8075
Electronic ISSN:
1095-9203
Topics:
Biology
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Chemistry and Pharmacology
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Computer Science
,
Medicine
,
Natural Sciences in General
,
Physics
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