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  • 1
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    Oxford : Periodicals Archive Online (PAO)
    Economic Inquiry. 33:4 (1995:Oct.) 664 
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    The annals of regional science 29 (1995), S. 189-206 
    ISSN: 1432-0592
    Source: Springer Online Journal Archives 1860-2000
    Topics: Architecture, Civil Engineering, Surveying , Geography , Economics
    Notes: Abstract This paper concerns itself with looking at the importance of transport and related infrastructure on the occupancy of new building and premises. Much regional and urban policy focuses on the importance of land use and building availability as an attraction for industrial and commercial growth. Such facilities, however, provide only one form of infrastructure and this study looks at the influence of local transport quality on the exploitation of new premises. It draws upon a large survey of new premises in the Strathclyde region of Scotland for its empirical content and uses multivariate analysis to link infrastructure provision to other spatial attributes which are important in stimulating local economic development.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Public choice 80 (1994), S. 83-104 
    ISSN: 1573-7101
    Source: Springer Online Journal Archives 1860-2000
    Topics: Economics
    Notes: Abstract Efficiency measurement has become a very popular field in applied economics in recent years, and with this interest there has been a large intellectual investment in refining the empirical methods available to researchers in the area. In this paper we relate these developments to Harvey Leibenstein's original 1966 insight into the psychological ideas underlying the notion that economic agents may not achieve maximal efficiency in their productive decisions and behaviour. Of course, it is always possible to argue that apparent inefficiency only arises from a failure of the observer to realise what it is that is being maximized. However, we evade this easy escape route into non-falsifiable hypothesizing, and instead take at face value the fact that too many empirical studies have come up with substantial measures of inefficiency for us to ignore its importance for normative economics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    International journal of infrared and millimeter waves 1 (1980), S. 1-2 
    ISSN: 1572-9559
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    International journal of infrared and millimeter waves 1 (1980), S. 145-158 
    ISSN: 1572-9559
    Keywords: semiconductors ; epitaxial GaAs ; far-infrared spectroscopy ; impurities in semiconductors
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The chemical identity of unintentional contaminants in ultra-high purity eipitaxial GaAs and related semiconductor crystals can be distinguished by submillimeter wave magneto-spectroscopy at low temperature. An improved method of identifying hydrogen-like donors such as sulfur, silicon, selenium and germanium has been developed for the purpose of correcting some mistaken identifications that have been published during the past ten years. The new method requires the development of an experimental “signature curve” for each contaminant by measuring the energy of its 1s to 2p (m=−1) transition at several values of magnetic field intensity. The energy of this transition at a given magnetic field intensity is different depending upon the nucleus to which the electron is bound in the 1s state. The validity of the improved method was tested by means of transmutation doping.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    International journal of infrared and millimeter waves 1 (1980), S. 513-524 
    ISSN: 1572-9559
    Keywords: semiconductors ; epitaxial GaAs ; farinfrared spectroscopy ; impurities in semiconductors
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract High intensity magnetic fields are needed for the far infrared photoconductivity method to be used reliably in the identification of unitentional contaminants in ultra high purity epitaxial GaAs. We show experimental evidence that the inhomogeneous Stark broadening of the 1s→2p (m=−1) transition of the hydrogen-like donor almost disappears as the magnetic field is increased to 20 Tesla. Since the spectral lines also become narrower and the central cell correction (chemical shift) becomes larger, the “signature curve” method of identification permits positive identification of donor species. In particular, the donors Ge and Se have been identified in specimens that were reported to contain carbon and Sn respectively.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    International journal of infrared and millimeter waves 3 (1982), S. 929-939 
    ISSN: 1572-9559
    Keywords: millimeter wave materials ; dielectric parameters ; absorption coefficient ; refractive index ; loss tangent ; coolant liquids ; dimethyl siloxane
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract These coolant materials were chosen for the first in this series of measrements of the complex parameters of liquids over the entire millimeter and submillimeter wavelength range of the spectrum. The fluorocarbon coolants not reported here exhibit an order of magnitude lower loss. It is the characteristic of these liquids that the absorption coefficient increases monotonically with frequency.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    International journal of infrared and millimeter waves 4 (1983), S. 127-134 
    ISSN: 1572-9559
    Keywords: shallow donors ; ternary semiconductor ; photoconductivity ; GaAs
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The hydrogen like 1s → 2p (m=−1,0,+1) transitions of two donors have been observed in high intensity magnetic fields up to 8.5T. The m=−1 transitions ocurred between 2 cm−1 and 25 cm−1. The signature curves for donors in ternary semiconductor In0.53Ga0.47As have now been established.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    International journal of infrared and millimeter waves 4 (1983), S. 119-126 
    ISSN: 1572-9559
    Keywords: spin splitting ; semiconductors ; epitaxial GaAs
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The spin-up and spin-down transitions of the ground state of the shallow donor electron have slightly different energies in an applied magnetic field. The splitting of the spin doublet increases with increasing magnetic field intensity. High field measurements of the splitting show that the dependence on magnetic field intensity is not only greater than a linear dependence but also greater than a quadratic dependence.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    International journal of infrared and millimeter waves 14 (1993), S. 403-403 
    ISSN: 1572-9559
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Type of Medium: Electronic Resource
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