ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Measurements of defect density, photoconductivity, and dark conductivity are used to obtain information about the values of the electron capture cross sections of charged and neutral metastable dangling-bond defects in high-quality, undoped, hydrogenated amorphous silicon at room temperature. Sixty measurements, obtained in the process of optical degradation experiments as a function of time at four different temperatures, have been analyzed using photoconductivity models corresponding to either one or two types of discrete-level, multivalent defects. A model with two types of defects is able to accurately describe both dark conductivity and photoconductivity results, and gives the following average values: an electron capture cross section of about 1×10−16 cm2 for neutral centers of both higher-lying (density not increased by light) and lower-lying (density increased by light) defects, of about 2×10−16 cm2 for positively charged higher-lying defects, and of about 20×10−16 cm2 for positively charged lower-lying defects. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.361082
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