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  • 1
    Publication Date: 2022-05-25
    Description: The Nantucket Shoals Flux Experiment (NSFE79) was conducted across the continental shelf and upper slope south of Nantucket from March, 1979 to April , 1980 to measure the flow of shelf water from the Georges Bank/Gulf of Maine region into the Middle Atlantic Bight. Conceived as a cooperative field experiment involving the Northeast Fisheries Center (NMFS), U.S. Geological Survey (Woods Hole), University of New Hampshire, and the Woods Hole Oceanographic Institution, the experiment contained two principal components, a moored array of current meter and bottom instrumentation deployed at six locations across the shelf and upper slope spanning a depth range from 46 m to 810 m, and a series of 27 hydrographic surveys made along or near the moored array line during the experiment. A basic description of the NSFE79 hydrographic data has been given in Part 1 by Wright (1983). A description of the moored array components and the basic moored array data sets is presented here in Part 2.
    Description: The NEFC participation was supported by the NMFS Marine Resources Monitoring, Assessment, and Prediction (MARt-1AP) Program. The U.S. Bureau of Land Management (BLM) supported the USGS field and analysis component under t~emoranda of Understanding M550-MU6-79, M551-MU8- 24, M551-MU9-4, and M551-MU0-18. The WHO! and UNH field programs were supported by the National Science Foundation under Grants OCE 78-19513 and OCE 78-26229.
    Keywords: Oceanography ; Hydrography ; Ocean currents ; Moored arrays
    Repository Name: Woods Hole Open Access Server
    Type: Technical Report
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 25 (1953), S. 1661-1663 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 31 (1966), S. 394-396 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 87 (1983), S. 4218-4220 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2397-2401 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of as-deposited and oxygen-annealed low-pressure chemical-vapor-deposited (LPCVD) silicon dioxide (SiO2) metal-oxide-silicon (MOS) structures were investigated. As-deposited LPCVD SiO2 MOS structures exhibit a high oxide fixed charge density in the mid-1011 cm−2 and an interface state density in the low-1011 cm−2 eV−1 due to the large number of oxygen and silicon dangling bonds. A low electron barrier height in these structures (1.2 eV) is presumed to be due to lowering of the barrier by excess silicon microclusters. Oxygen-annealed LPCVD SiO2 MOS structures exhibit oxide fixed charge and interface state densities in the mid-1010 cm−2 and mid-1010 cm−2 eV−1, respectively. Both the as-deposited and annealed devices exhibit turnaround in flatband voltage shift with avalanche electron injection. However, the direction of shift is opposite for the two devices with the annealed device being very similar to that of thermally grown SiO2 MOS structures. Apparently, oxygen annealing restructures and oxidizes the partial SiOx in the as-deposited LPCVD oxide into stochiometric SiO2. However, the residual nonstochiometric SiO2 microclusters in the bulk result in an electron barrier height of only 2.3 eV.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1475-1484 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion and electron beam-induced deposition (BID) of thin (1–4 μm), conductive films is accomplished by dissociating and removing the nonmetallic components of an adsorbed, metal-based, molecular gas [SnCl4 and (CH3)4Sn]. Previous research has focused primarily on room-temperature (monolayer adsorption) BID using electrons and slow, heavy ions. This study investigates low-temperature (120 K) BID in which the condensation rate of the precursor gas is well controlled. The residual metallic films are produced by using as incident beams either 2-keV electrons, 25-keV H2+, or 50-keV H2+, all of which provide predominantly electronic energy deposition, or 30-keV Ar+, which provides predominantly nuclear energy deposition. Residual films are analyzed ex situ by scanning electron microscopy, mechanical thickness measurements, resistivity measurements, Rutherford backscattering spectroscopy, and infrared spectrometry. A model is developed that considers bulk and surface dissociation mechanisms and sputtering to describe the BID process. The derived cross sections for the formation of a residue from condensed (CH3)4Sn are nonlinearly related to the total deposited energy approximately to the 1.4 power. The lowest electrical resistivity values of the residues (650 μΩ cm) are obtained only by significant loss of carbon, which is strongly dependent on the nuclear stopping power.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dopant deactivation and thermal annealing characteristics of metal-oxide-semiconductor capacitors fabricated on Ge/B-doped silicon after gamma irradiation or Fowler–Nordheim injection were investigated for the first time. A decrease of about 30% in active acceptor concentration was observed immediately after gamma irradiation or Fowler–Nordheim injection. Further deactivation of boron (∼20%) occurred with annealing for temperatures of 80 °C and higher. Hydrogen for the deactivation, which occurred during annealing, is thought to come from dissociation of weakly bonded Ge—H formed during the gamma irradiation or Fowler–Nordheim injection. Capacitors fabricated on conventional boron-doped substrates do not exhibit acceptor deactivation as a result of annealing following irradiation or injection. For annealing temperatures of 110 °C and higher, the boron is first deactivated by the process noted above, and then is apparently reactivated by the dissociation of B—H bonds with hydrogen evolution from the structure.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of a hydrogen ambient on the change in interface state energy distribution of germanium/boron (Ge/B) counterdoped silicon substrate metal-oxide-silicon capacitor structures during and following gamma irradiation were investigated. The presence of hydrogen during irradiation produces both a significantly larger increase in interface state density throughout the band gap and a higher peak value at approximately 0.7 electron volts above the valence band (0.7-eV peak) than is obtained for devices irradiated in air. Additionally, the time for the 0.7-eV peak to reach its maximum value is much shorter as is the time lapse for the initiation of growth of a trap peak at 0.35 electron volts above the valence band (0.35-eV peak). Devices irradiated in air and then stored in hydrogen exhibit similar behavior as those irradiated in hydrogen except that the interface state buildup with time is much slower. Pretreating devices by exposure to hydrogen prior to Fowler–Nordheim (F-N) injection or avalanche electron injection (AEI) is shown to inhibit interface state generation including a significant reduction in the 0.7-eV peak height. This result suggests that hydrogen created by F-N injection and AEI passivate dangling bonds associated with germanium in the silicon.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4647-4651 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-oxide-semiconductor (MOS) capacitors were fabricated on germanium/boron (Ge/B) doped silicon substrates. Typical fixed charge and interface state densities were found to be 5×1010 cm−2 and 5×1010 eV−1 cm−2, respectively. Germanium counterdoping in the boron-doped silicon does not appear to degrade the interfacial properties of MOS structures. Avalanche electron injection produces a slight increase in interface state density, a reduction in inversion capacitance due to deactivation of boron, and a shift in flatband voltage. However, turnaround in flatband voltage shift is not observed due either to enhanced electron trapping or a reduction in donorlike interface state generation. Three different methods used to determine the electron barrier energy height at the silicon dioxide-Ge/B silicon interface yielded a value of 2.2 eV. This smaller barrier height is attributed to the smaller electron affinity of Ge/B-doped silicon.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 2164-2174 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Depolarized Rayleigh and polarized Rayleigh–Brillouin scattering are employed to examine the mobility of toluene in solutions of poly(methyl methacrylate) (PMMA) and for PMMA concentrations: 0≤cPMMA≤1. The depolarized Rayleigh measurements were performed in the temperature range 20–120 °C with several interferometer spacings, whereas the polarized Rayleigh–Brillouin measurements were made in the range from −20 to 140 °C. The reorientation times of toluene, obtained from a single Lorentzian fit to the experimental depolarized spectra, are in good agreement with earlier NMR and dielectric relaxation data. Two Lorentzians were necessary to fit the depolarized spectra of the PMMA/toluene solutions at all temperatures. The broader Lorentzian is due to fast toluene reorientation and the narrower Lorentzian contains contributions from both slowly relaxing polymer chains and slow solvent reorientation in the macromolecular environment. The reorientation time and the fraction of the "mobile'' toluene molecules are obtained, respectively, from the width and the integrated intensity of the broader Lorentzian. We discuss the reorientational dynamics of the broader Lorentzian with respect to the normalized solvent relaxation time τ/τ0, where τ0 refers to the neat solvent. The principal conclusions of this work with respect to solvent dynamics are (i) the exponential concentration dependence of τ/τ0 at high temperatures and for polymer concentration up to 70% which is similar for the three polymer/solvent systems employed so far, (ii) the presence of two time scales for the solvent reorientation in these homogeneous polymer solutions, and (iii) these "fast'' and "slow'' relaxation processes resemble the toluene and PMMA bare dynamics, respectively, and their relative amplitudes depend on temperature. The experimental results are discussed in terms of recent models of orientational relaxation in dense systems. Furthermore, the polarized Rayleigh–Brillouin measurements on the PMMA/toluene system revealed the presence of significant rotational mobility of toluene acting as an initiator for the broad hypersonic attenuation observed at GHz frequencies.
    Type of Medium: Electronic Resource
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