ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have unambiguously shown that low-energy optical transitions generate electrons that belong either to the Γ minimum of GaAs or to the X minimum of AlAs, depending on the mean aluminum concentration, for a series of 5-nm period GaAs/AlAs superlattices. We estimate the intensity of the potential responsible for the Γ-X mixing to be on the order of 1–2 meV. For this kind of study, the photocurrent technique, which gives well-structured spectra recorded on large spectral ((approximately-equal-to)0.7 eV) and temperature (4–300 K) ranges, appears more favorable than the photoluminescence excitation spectroscopy technique.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.342621
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