Publication Date:
2015-05-06
Description:
Author(s): J. A. Haigh, C. Ciccarelli, A. C. Betz, A. Irvine, V. Novák, T. Jungwirth, and J. Wunderlich The paper reports the observation of an anisotropic capacitance in a parallel plate p - n junction capacitor where one plate is a ferromagnetic semiconductor, GaMnAs, and the other is nonmagnetic n -doped GaAs. The capacitance depends on the angle of the magnetization of the ferromagnetic plate and is analogous to the tunneling anisotropic magnetoresistance, which originates from the spin-orbit interaction. This can be an important effect in magnetic sensor applications. [Phys. Rev. B 91, 140409] Published Wed Apr 29, 2015
Keywords:
Magnetism
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
Permalink