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  • 1
    Electronic Resource
    Electronic Resource
    Hot-electron transport in In0.53Ga0.47As (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1842-1849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Monte Carlo routine has been used to simulate hot-electron transport across narrow regions of heavily doped In0.53Ga0.47As. The doping level/widths considered correspond to those proposed for the base of hot-electron transistors. For doping levels of order 1018 cm−3, the injected hot electrons suffer inelastic scattering by the coupled plasmon-optic phonon mode. The performance of hot-electron transistors is characterized by the base transfer factor which relates a change in collector current with a change in emitter current. The base transfer factor is determined from the simulations for a range of base widths and operating conditions. Results for InGaAs are compared with those for GaAs. Under comparable operating conditions, the InGaAs hot-electron transistor offers a higher transport efficiency and hence, higher current gain compared with that of GaAs. We have used the Monte Carlo routine to simulate the performance of experimental results from InGaAs hot-electron transistors. The simulations are in good agreement with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339567
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  • 2
    Electronic Resource
    Electronic Resource
    Digital scanning probe microscope controller for molecular manipulation applications (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1698-1701 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A versatile digital controller for scanning probe microscopy capable of data acquisition during molecular manipulation has been constructed. A commercially available digital signal processor (DSP) board connected to a Pentium PC and custom-built high voltage amplifiers were used to control a commercial ultrahigh vacuum scanning tunneling microscope and to perform molecular manipulations. Use of the DSP system to produce all analog outputs resulted in an extremely flexible system with complete control of the probe tip. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150522
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  • 3
    Electronic Resource
    Electronic Resource
    Physics and design of hot-electron spectrometers and transistors (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3076-3079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explain how Monte-Carlo simulations may be used to calculate the transfer characteristics of GaAs hot-electron transistors, from which hot-electron spectra may be derived. We present such spectra for a range of doping densities and injection energies for a base width of 500 A(ring). We compare our results with those derived from other theories and suggest an experiment which should indicate their relative validity. Optimum parameters for base width and doping for high-frequency hot-electron transistors are derived and compared with available experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342702
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  • 4
    Electronic Resource
    Electronic Resource
    Hot-electron transport in GaAs in the presence of a magnetic field (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1425-1427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the results of the incorporation of magnetic field effects into the Monte Carlo simulation of hot electrons traversing narrow regions of heavily doped GaAs. In addition to accounting for the experimentally observed suppression of the ballistic contribution to the hot-electron spectrum, a further analysis allows us to infer the spread in transverse energy of the injected hot electrons.We attribute this loss of collimation to scattering by unscreened ionized impurities in the depletion region which is set up when a hot-electron injector is forward biased.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98645
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  • 5
    Electronic Resource
    Electronic Resource
    High-frequency study of nonequilibrium transport in heterostructure bipolar transistors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1789-1791 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results of studying nonequilibrium transport in heterostructure bipolar transistors at a millimeter-wave band. Increasing the total potential drop in the collector from 0.88 to 1.6 eV changes the measured intrinsic transit delay from 0.32 to 0.63 ps due to the increasing importance of intervalley scattering. Both the experimental and calculated data illustrate the role nonequilibrium transport and intervalley scattering have in determining the fundamental limits to device performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102174
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  • 6
    Electronic Resource
    Electronic Resource
    Numerical study of nonequilibrium electron transport in AlGaAs/GaAs heterojunction bipolar transistors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 250-252 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have simulated numerically the dynamics of nonequilibrium electron transport in n-p-n AlGaAs/GaAs heterojunction bipolar transistors. We show that collector transit time is intimately related to base transport dynamics and high p-type carrier concentration in a thin base improves device performance. However, even for a very thin collector depletion region, the small Γ-X intervalley energy separation in GaAs places severe constraints on efficient collector transport.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101921
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  • 7
    Electronic Resource
    Electronic Resource
    Atomic scale protection using fullerene encapsulation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 126-128 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of fullerene multilayers as a removable protective coating on a clean, reconstructed semiconductor surface has been investigated using an ultrahigh vacuum scanning tunneling microscope (UHV-STM). We have found that the Ag/Si(111)-(square root of)3×(square root of)3R30° surface, which is normally stable only under an UHV environment, can survive exposure to ambient conditions beneath a protective layer of C60. The C60 capping layer may be removed by annealing after reinsertion into UHV. For optimum protection a thickness 〉5 monolayers is required. The protective effect lasts for times of order several minutes. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336553
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  • 8
    Electronic Resource
    Electronic Resource
    Room temperature manipulation of the heterofullerene C59N on Si(100)-2×1 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1074-1076 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The absorption of the heterofullerene C59N on the Si(100)-2×1 surface has been investigated using scanning tunneling microscopy (STM) under ultrahigh vacuum conditions. The molecules are adsorbed in monomer form in the troughs between silicon dimer rows. It is possible to use the tip of the STM to manipulate the molecules parallel and perpendicular to the dimer rows in a controlled fashion at room temperature. To determine the stability of the C59N monomer we have examined the response of pairs of molecules to STM manipulation and found that the Si(100)-2×1 surface inhibits conversion to (C59N)2 dimers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124601
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  • 9
    Electronic Resource
    Electronic Resource
    Doping of covalently bound fullerene monolayers: Ag clusters on C60/Si(111) (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1144-1146 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition of silver on a C60 monolayer chemisorbed on Si(111) leads to the formation of nanoscale clusters which, as determined from valence band photoemission measurements, donate minimal charge to the adsorbed fullerene molecules. The low doping level of the C60 monolayer leads to a slow rate of Ag cluster neutralization following the emission of a photoelectron, resulting in a significant shift of the cluster Fermi level and valence band features to higher binding energy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289797
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  • 10
    Electronic Resource
    Electronic Resource
    Molecular scale alignment strategies: An investigation of Ag adsorption on patterned fullerene layers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2937-2939 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a procedure for atomic scale alignment with respect to macroscopic objects. Metallic and etched registration marks on clean reconstructed Si surfaces are used to guide the tip of a scanning tunnelling microscope. The metallic marks are formed from Ta and can withstand thermal cycling up to 1500 K. These procedures have been used to investigate the interaction of Ag with a patterned fullerene multilayer deposited on Si(111)-7×7. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120221
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