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  • 1
    Electronic Resource
    Electronic Resource
    Kirkendall voids and the formation of amorphous phase in the Al-Pt thin-film system prepared by high-temperature successive deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4096-4100 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the amorphization processes taking place in the Al-Pt thin-film system prepared by high-temperature successive deposition. The formation of Kirkendall voids in the Al film was directly proved and intensively studied in relation to the percentage of Al and Pt components. An estimation of the composition of the amorphous phase is given, and the model proposed for the amorphization process is discussed. The films were analyzed by transmission electron microscopy, cross-sectional transmission electron microscopy, selected area electron diffraction, and energy dispersive x-ray microanalysis. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361772
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  • 2
    Electronic Resource
    Electronic Resource
    Composition of a solid phase growing under nonequilibrium conditions (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7579-7582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composition of a binary solid phase is predicted in a multiphase environment during phase formation by a steady-state process in linear growth geometry characterized by planar interfaces. In this situation, Gibbs free energy is also dissipated at the opposite interfaces of the forming phase which is not in thermodynamic equilibrium with its surroundings. Although the common tangent rule of an equilibrium situation cannot be applied to the steady-state process, the composition is derived here from the free energy curves of the equilibrium phase by a self-consistent, iterative solution of a new model that combines thermodynamic and diffusional considerations. Accurate composition—as proven experimentally—is predicted for the amorphous Al–Pt phase using a reasonable assumption for the ratio of chemical potential drops at the opposite interfaces of the forming phase. Although our numerical example is the amorphous Al–Pt system, the model can also be applied to other amorphous or solid solution phases which exist in a wide compositional range. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373024
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  • 3
    Electronic Resource
    Electronic Resource
    The effect of ion beam treatment and subsequent annealing on Au/GaAs contacts (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3408-3413 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of Xe++ and Ar+ ion beam treatment and subsequent annealing on the Au (55 nm)/n-GaAs system was studied using cross-sectional transmission electron microscopy. The maximum depth of observed defects caused by Xe++ ions (700 keV, 1×1014 ions/cm2) was about 400 nm from the interface in excellent agreement with the results of capacitance-voltage measurements. The formation of about 50-nm-thick polycrystalline region of GaAs was observed. The ion beam treatment resulted in the formation of defects (stacking faults, twins) down to a depth of 200 nm measured from the interface. Between 200 and 400 nm depth dislocation loops were formed. Amorphization has not been observed. The sharp Au/GaAs interface has been only slightly destroyed in the as-implanted sample. In contrast to pits in unirradiated samples, large flat grains of Au(Ga) solid solution grown into the highly damaged region of GaAs were found in the samples annealed at 450 °C after the ion beam treatment. The formation of a regrown GaAs covering layer was observed on the top of the reacted metallization. High dose implantation of Xe++ ions resulted in the formation of an amorphous GaAs layer with a thickness of about 750 nm. A phase transition caused by the ion beam was observed in this sample. During annealing at 400 °C the whole amorphous GaAs region recrystallized to single-crystal GaAs. Ion beam treatment with Ar+ ions (400 keV, 2×1014 ions/cm2) caused the formation of dislocation loops. In this case the growth of pits is similar to the case of simple annealing without bombardment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350937
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  • 4
    Electronic Resource
    Electronic Resource
    Diffusion coefficient of Al in metastable, amorphous Al–Pt phase (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3220-3222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion data for amorphous binary alloys are scarce in the literature. There are no data available for the diffusion of Al in Al–Pt amorphous phase known to the authors. High-temperature successive deposition of components was used in the present experiments to reveal the elementary processes of reactive diffusion forming the metastable amorphous phase and to determine the diffusion coefficient of Al in this phase: D(α)=(1.2±0.4)×10−10×exp[−(6.9±0.1)×104J mol−1/RT]m2 s−1. This value, taken from thin film experiments, can be considered as a good approximation to the bulk diffusion coefficient. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122724
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  • 5
    Electronic Resource
    Electronic Resource
    Regrowth of a thin InP surface covering layer in the Au/InP system during annealing (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 105-107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Au(100 nm)/InP(111) samples were annealed at 500 °C in a forming gas for 10 min. Au9In4 and AuIn2 phases formed during the heat treatment. Besides the formation of Au-In phases, a thin (about 20 nm thick), polycrystalline, continuous InP layer was observed on the top of the sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107654
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  • 6
    Electronic Resource
    Electronic Resource
    The direct observation and investigation of the oxidation of aluminum in the transmission electron microscope (1979)
    Springer
    Oxidation of metals 13 (1979), S. 245-254 
    Details
    ISSN: 1573-4889
    Keywords: high-purity aluminum thin films ; in situ electron microscopy ; in situ evaporation ; in situ oxidation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The authors studied the oxidation of thin aluminum films free of oxide layers in situ prepared by evaporation directly in the electron microscope under ultra-high-vacuum conditions. The oxidation was realized at various temperatures (350–500°C) and at various oxygen pressures (1–10−3 Pa). The formation and growth of the amorphous and crystalline products have been studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00603669
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical properties of thin oxidized aluminium films (1991)
    Springer
    Journal of materials science 26 (1991), S. 2007-2014 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Thin aluminium films of thickness 40 to 200 nm were deposited on to glass substrates at 573 K in a high vacuum. The deposition was carried out layer by layer and the interfaces between these layers were exposed to oxygen. The electrical resistivity was studied as a function of the film thickness, annealing time, annealing temperature and oxygen pressure. The temperature coefficient of resistivity and the activation energy for the conduction electrons were studied as a function of the film thickness and oxygen pressure. Fuchs-Sondheimer theory for electrical conduction was applied to the experimental results. The mean free path of the conduction electrons was calculated as a function of temperature and agreed well with the theoretical relation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00549159
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  • 8
    Electronic Resource
    Electronic Resource
    Ion beam induced roughness and its effect in AES depth profiling of multilayer Ni/Cr thin films (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 12 (1988), S. 144-150 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The development and changes in the surface topography during ion beam etching is described by a new model taking into account the lateral displacement and collective behaviour (annihilation) of the ‘macrostep’.The model was applied to simulate thedepth dependent surface roughening taking place at the depth profiling of Ni/Cr multilayer systems with various sputtering conditions. Crystals in a channelling position were considered as sources of macrosteps. The experiments confirmed the lack of the surface roughening predicted by the model at high incidence angle of the ion beam (θ〉85°)and at sample rotation. The experimental depth resolution proved to be independent of the depth if the upper layers had been removed by presputtering in ion milling equipment at θ = 86° before the conventional Auger depth profiling was carried out. A best resolution- (3.2 nm) has been achieved at 225 nm depth when the sample was presputtered down to 180 nm and was also rotated during Auger profiling.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740120215
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  • 9
    Electronic Resource
    Electronic Resource
    Surface structure of Al—Sn layered systems codeposited in the presence of oxygen (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 22 (1994), S. 314-317 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Al—Sn layer structures were prepared by simultaneous evaporation of Al and Sn onto a Si substrate covered by amorphous SiO2, at a substrate temperature of 470-480 K and an oxygen partial pressure of 5 × 10-3 Pa and 1.3 × 10-2 Pa, respectively. The chemical state and the depth distribution of the species formed in the surface layers were analysed by XPS and the cross-section of the layer system was investigated by transmission electron microscopy. The results obtained confirm the formation of an Al—O—Sn solid phase, segregated to the surface, which prevents the growth of various size Al crystals. At higher oxygen partial pressures a cermet-like structure is observed above the Al film-substrate interface, while on the top of this layer an amorphous, homogeneous overlayer can be identified.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740220168
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  • 10
    Electronic Resource
    Electronic Resource
    Direct TEM study of the roughening of SiO2/Si interface induced during AES depth profiling (1986)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 9 (1986), S. 328-328 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740090512
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