Electronic Resource
Chichester [u.a.]
:
Wiley-Blackwell
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
2 (1989), S. 81-92
ISSN:
0894-3370
Keywords:
Engineering
;
Electrical and Electronics Engineering
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
Notes:
A de model for short-channel MOSFETs is presented in this paper. Several second-order effects associated with small-geometry MOSFETs such as mobility degradation, carrier velocity saturation and channel length modulation are included in the model. The analysis emphasizes the modeling of the output conductance and the transconductance which are important in analogue circuit simulation. The theoretical predictions of the model are in good agreement with the experimental data available in the literature.
Additional Material:
10 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/jnm.1660020204
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