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  • 1
    Electronic Resource
    Electronic Resource
    Shock wave analysis of laser assisted particle removal (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7044-7047 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser assisted particle removal (LAPR) is an innovative laser cleaning technique which can remove various particles from solid surfaces via laser induced explosive evaporation of a chosen energy transfer medium, e.g., water. An Ar+ ion continuous-wave laser (488 nm) was used to study the CO2 laser pumped explosive evaporation of water adsorbed on a Si substrate. The probe laser beam was parallel to the sample surface at different displacements and interacted with the ejected material upon pulsed CO2 laser irradiation in analogy with the time resolved laser beam deflection experiments on laser induced vaporization of copper by Guo et al. [Opt. Commun. 77, 381 (1990)]. Using CO2 laser energies which are much greater than the LAPR thresholds, we observed the generation and propagation of a shock wave at supersonic speeds followed by a water vapor/aerosol/particle cloud at a much slower speed. From the evolution of the shock wave, the total conversion efficiency of the incident laser beam into the shock wave has been determined using a self-similar approximation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355017
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  • 2
    Electronic Resource
    Electronic Resource
    High deposition rate laser direct writing of Al on Si (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2087-2089 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report, for the first time, the direct write laser patterning of highly conductive Al from a liquid precursor, triisobutylaluminum (TIBA). Al wires were written on Si with a scanned Ar+ laser from liquid TIBA at speeds of up to several mm/s. Wires 3 μm wide by 1 μm high with a resistivity of 5.6 μΩ cm were routinely achievable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105019
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  • 3
    Electronic Resource
    Electronic Resource
    Transient nonlinear laser heating and deposition: A comparison of theory and experiment (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1653-1657 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-dependent nonlinear laser-heating calculations have been applied to the laser chemical vapor deposition of reflective metallic coatings on absorptive low thermal conductivity substrates such as fused quartz. The surface temperature profile is modified by the changing optical properties of the substrate as the film is deposited, leading to a decrease in the surface temperature and flattening of the temperature profile with increasing irradiation time and film deposition. The results of the theoretical calculations are compared with real-time optical measurements of the deposition rate of Ni from Ni(CO)4 on SiO2 using a CO2 laser as a function of irradiation time, yielding excellent agreement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336479
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of periodic structures in pyrolytic laser-deposited SiC (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 470-472 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonmelting surface interference ripples have been conclusively observed for the first time in thermally driven deposition of SiC from SiH4 and CH4. One set of ripples with a spatial frequency close to the primary beam wavelength (9.27 μm) is formed normal to the E field of the incident beam. An additional set of small-amplitude ripples of 1 μm or less in spacing and oriented parallel to the E field is also observed. These structural features are more pronounced in samples with higher melting points and completely disappear as the irradiated surface melts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337798
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  • 5
    Electronic Resource
    Electronic Resource
    CO2 laser assisted particle removal threshold measurements (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2314-2316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser removal of particulates from solid surfaces was achieved using an energy transfer medium which preferentially adsorbs in the capillary spaces under and around the particulates on the contaminated surface. Subsequent laser irradiation causes explosive evaporation of the energy transfer medium and propels the particles off the substrate much like a small rocket engine. In our experiments, a TEA CO2 (10.6 and 9.6 μm) laser was used to remove 9.5 μm Al2O3, 5 μm Al2O3, and 1 μm polystyrene particles from Si surfaces using water as the energy transfer medium. At these wavelengths the laser energy is absorbed predominantly in the water not in the substrate. The threshold fluence for particle removal was found to follow a degenerate threshold model with measured thresholds significantly below the substrate damage threshold. The temperature rise in the energy transfer medium was estimated using energy conservation, suggesting that superheating of the adsorbed water is a reasonable mechanism for water assisted laser particle removal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108228
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  • 6
    Electronic Resource
    Electronic Resource
    Real time measurement of deposition initiation and rate in laser chemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 327-331 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser chemical vapor deposition (LCVD) is a modification of conventional CVD using a laser heat source. Although the reactant systems used may be similar to conventional CVD, the film growth characteristics may differ in several ways. The changes in the optical properties of the film/substrate during deposition must be considered as the amount of laser energy absorbed determines the surface temperature and the maximum deposition rate. Also affecting the deposition rate is the diffusion of reactants to the reaction zone. Because of the small area heated in LCVD, higher surface temperatures can be accessed before diffusion and convection limit the deposition rate. For favorable reactant systems, very rapid deposition rates (greater than 100 μm/sec) and scan speeds for line deposition (greater than 10 cm/sec) can be achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335680
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  • 7
    Electronic Resource
    Electronic Resource
    Steady-state temperature profiles in thermally thin substrates induced by arbitrarily shaped laser beams (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 488-491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The steady-state temperature profiles in flat, thermally thin slabs in a low thermal conductivity medium such as air or gas are calculated. For sufficiently thin samples, conduction to the ambient dominates. Solutions applicable to laser processing of technologically interesting samples such as thin semiconductor wafers heated with Gaussian beams are derived. Included are simple expresssions that allow estimation of the front and back surface temperatures and deviation from the assumption of semi-infinity in both depth and radius.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343563
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  • 8
    Electronic Resource
    Electronic Resource
    Laser-assisted micron scale particle removal (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 203-205 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel laser-assisted particle removal (LAPR) technique capable of removing micron scale particles from semiconductor substrates is presented. In our preliminary experiments the contaminated substrates were dosed with water which preferentially adsorbs in the capillary spaces under and around the particles and were subsequently irradiated with transverse, electric, atomspheric CO2 laser pulses. At the CO2 laser wavelength the beam energy is mainly absorbed in the water and not the substrate. The subsequent explosive evaporation of the adsorbed water molecules produces forces many orders of magnitude larger than the adhesion forces between the particle and the substrate which propel the particles off the substrate surface. LAPR is inherently clean and can easily be incorporated into current or planned wafer processing systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104923
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of PCB and DES on rat monoamine oxidase, acetylcholinesterase, testosterone, and estradiol ontogeny (1992)
    Springer
    Bulletin of environmental contamination and toxicology 48 (1992), S. 884-893 
    Details
    ISSN: 1432-0800
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00201150
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  • 10
    Electronic Resource
    Electronic Resource
    Mechanisms of carbon dioxide laser stereolithography in epoxy-based materials (1996)
    New York, NY [u.a.] : Wiley-Blackwell
    Journal of Applied Polymer Science 62 (1996), S. 491-500 
    Details
    ISSN: 0021-8995
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: We present in this article the use of infrared laser radiation to achieve localized curing in thermosensitive epoxy resin compounds. In stereolithography, the objective is to cure a localized region in a material by precisely confining the laser energy to the area that is to be cured. Industry already uses ultraviolet laser radiation at 352 nm to fabricate three-dimensional structures. Via infrared laser curing, we demonstrate the viability of a completely thermal localized curing process. In our experiment, we have focused the beam from a carbon dioxide (CO2) laser onto a sample composed of epoxy resin, diethylene triamine, and silica powder. Such resins typically cure, or solidify, when heated to moderately high temperatures, and our results show that we can confine the heating of the material, and, therefore, its curing in all three dimensions. We present a physical and a chemical model to describe the process and measure the curing rate as a function of temperature. In order to model the flow of heat in our sample as a result of infrared laser irradiation, we solved the time-dependent heat equation in cylindrical coordinates using the Crank-Nicholson finite-difference method. The results allow us to predict the curing behavior of the sample as a function of laser irradiation conditions, and we find good agreement with our preliminary experimental observations. © 1996 John Wiley & Sons, Inc.
    Additional Material: 7 Ill.
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