Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 1303-1305
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Sulphur passivation effects on InGaAsSb/GaSb mesa-type photodiodes were investigated. Measurement results showed zero-bias resistance increased up to 40 times and reverse currents decreased greatly, as a result of sulphur passivation. Current–voltage characteristics showed no sign of degradation of InGaAsSb surface. Auger electron spectroscopy and x-ray photoelectron spectroscopy results demonstrated that the passivation layer is not in the form of S compounds but S element, S8 or Sn. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1448383
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